SII50N12

SII50N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol RthJC RthJCD o TC = 25oC, unless otherwise specified Conditions Values 1200 78(50) 156(100) _ +20 400 _ 40...+125(150) 2500 _ 0.3 < o Units V A A V W C TC= 25(80) C TC= 25(80)oC, tP =1ms _ TOPERATION < Tstg AC, 1min V K/W _ < 0.6 Sirectifier R SII50N12 NPT IGBT Modules Electeical Characteristics Symbol Conditions Static Characteristics VGE(th) VGE = VCE, IC =2mA ICES VGE = 0; VCE = 1200V; Tj = 25(125)oC IGES VGE = 20V, VCE = 0 VCE(sat) IC =50A; VGE = 15V; Tj = 25(125)oC; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres gfs VCE=20V, IC=50A Switching Characteristics td(on) VCC = 600V, IC = 50A tr RGon = RGoff =22 , Tj = 125oC td(off) VGE = ± 15V tf FWD under following conditions: VF IF = 50A, VGE = 0V, Tj = 25(125)oC trr IF=50A, VR= _ 600V, VGE=0V,di/dt=_ 800A/us, Tj = 125oC _ IF = 50A, VGE = 0V, VR= 600V Qrr _800A/us, Tj = 25(125)oC di/dt= Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 0.8(3.5) 2.5(3.1) 3.3 0.5 0.25 23 max. 6.5 1 200 3(3.7) Units V mA nA V nF S 44 56 380 70 2.3(1.8) 0.2 2.8(8) 100 100 500 100 2.8 ns V us uC Mechanical Data 5 5 160 Nm Nm g Sirectifier R SII50N12 NPT IGBT Modules Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 450 W Ptot 350 300 100 µs Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 A t = 14.0µs p IC 10 2 250 10 1 200 150 10 0 100 50 0 0 20 40 60 80 100 120 °C 160 10 -1 0 10 DC 10 ms 1 ms 10 1 10 2 10 3 V TC VCE Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 90 A IC 70 60 50 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 IGBT K/W ZthJC 10 -1 10 -2 40 30 10 -3 20 10 0 0 10 -4 -5 10 single pulse D = 0.50 0.20 0.10 0.05 0.02 0.01 20 40 60 80 100 120 °C 160 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Sirectifier R SII50N12 NPT IGBT Modules T yp. output c harac teris tic s IC = f (V C E ) parameter: tp = 8 0 µs , T j = 2 5 °C 100 A T yp. output c harac teris tic s IC = f (V C E ) parameter: tp = 8 0 µs , T j = 1 25 °C 100 A IC 80 70 60 50 40 30 20 10 0 0 1 7V 1 5V 1 3V 1 1V 9V 7V IC 80 70 60 50 40 30 20 10 0 1 7V 1 5V 1 3V 1 1V 9V 7V 1 2 3 V 5 0 1 2 3 V 5 VC E VCE T yp. trans fer c harac teris tic s IC = f (V G E ) parameter: tp = 8 0 µs , V C E = 2 0 V 100 A IC 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 V 14 VGE Sirectifier R SII50N12 NPT IGBT Modules Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 50 A 20 V nF VGE 16 14 12 10 8 10 0 6 4 2 0 0 40 80 120 160 200 240 280 nC 340 10 -1 0 600 V 800 V T yp. c apac itanc es C = f (V C E ) parameter: V G E = 0 , f = 1 MHz 10 2 C 10 1 C is s C os s C rs s 5 10 15 20 25 30 QGate V VCE 40 R evers e bias ed s afe operating area I C puls = f(V C E ) , T j = 1 50°C parameter: V G E = 1 5 V 2.5 S hort c irc uit s afe operating area I C s c = f(V C E ) , T j = 1 50°C parameter: V G E = ± 1 5 V , tS C ≤ 1 0 µs , L < 50 nH 12 IC puls /I C IC sc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 200 400 600 800 1000 1200 V 1600 VC E 0 0 200 400 600 800 1000 1200 V 1600 VC E Sirectifier R SII50N12 NPT IGBT Modules T yp. s witc hing time I = f ( IC ) , inductive load , T j = 1 25°C par.: V C E = 6 00 V , V G E = ± 1 5 V , R G = 2 2 Ω 10 3 T yp. s witc hing time t = f ( R G ) , inductive load , T j = 1 25°C par.: V C E = 6 00 V , V G E = ± 1 5 V , I C = 5 0 A 10 4 ns t tdoff ns t tdoff 10 3 10 2 tr tf tdon 10 2 tr tdon tf 10 1 0 20 40 60 80 A 120 10 1 0 20 40 60 80 IC Ω 120 RG T yp. s witc hing los s es E = f ( IC ) , inductive load , T j = 1 25°C par.: V C E = 6 00 V , V G E = ± 1 5 V , R G = 2 2 Ω 25 T yp. s witc hing los s es E = f ( R G ) , inductive load , T j = 1 25°C par.: V C E = 6 00 V , V G E = ± 1 5 V , I C = 5 0 A 25 E on E mWs E mWs E on 15 15 10 E off 10 E off 5 5 0 0 20 40 60 80 A 120 0 0 20 40 60 80 IC Ω 120 RG Sirectifier R SII50N12 NPT IGBT Modules F orward c harac teris tic s of fas t rec overy revers e diode IF = f(V F ) parameter: T j 100 A Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 Diode K/W ZthJC IF 80 70 60 10 -1 T j=125°C 50 40 30 T j=25°C 10 -2 D = 0.50 0.20 0.10 10 -3 single pulse 0.05 0.02 0.01 20 10 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -4 -5 10 -4 -3 -2 10 10 10 10 -1 s 10 0 VF tp Sirectifier R