SII75N06

SII75N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol Conditions TC = 25oC, unless otherwise specified Values 600 100(75) 150 355 _ +20 75 150 450 2500 Units V A A W V A A As V 2 IGBT Wechselrichter/ IGBT Inverter VCES IC TC= 25(75)oC ICRM TC= 75oC, tP =1ms Ptot TC= 25oC, Tvj= 150oC VGES Diode Wechselrichter/ Diode Inverter IF IFRM 2 tP =1ms VR=0V, tP =10ms; TVj=125oC It Module Isolation/ Module Isolation VISOL RMS, f=50Hz, t=1min, NTC connect to Baseplate Sirectifier R SII75N06 NPT IGBT Modules Characteristics Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VGEth VGE = VCE, IC =1.5mA ICES VGE = 0; VCE = 600V, Tj = 25(125)oC IGES VCE=0; VGE=20V VCE(sat) Cies Cres LCE Isc TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 1(1000) max. 6.5 500 400 Units V uA nA V nF nH A IC =75A; VGE = 15V; Tj = 25(125)oC under following conditions VGE = 0, VCE = 25V, f = 1MHz tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: VCC = 300V, IC = 75A RGon = RGoff =3.0 , , Tj = 25(125)oC VGE = ± 15V Tj = 25(125)oC, LS = 30nH o 1.95(2.2) 2.45(-) 3.3 0.3 40 340 td(on) tr td(off) tf Eon(Eoff) RCC'+EE' 63(65) 22(25) 155(170) 20(35) 0.7(2.4) 1.2 0.35 ns ns ns ns mJ m K/W RthJC Diode Wechselrichter/ Diode Inverter under following condition VF IF = 75A; VGE = 0V; Tj = 25(125)oC IRM IF = 75A; Tj = 25(125)oC Qr -di/dt = 3000A/us Erec VGE = -10V, VR=300V RthJC RthCK TVJ TVJM Tstg 1.25(1.2) 95(115) 5.1(7.9) -(2.3) 0.03 -40...+125 150 -40...+125 1.6(-) V A uC mJ K/W o 0.66 C Mechanical Data Ms to heatsink M6 Mt to terminals M5 w 3 2.5 5 5 160 Nm Nm g Sirectifier R SII75N06 NPT IGBT Modules Sirectifier R SII75N06 NPT IGBT Modules Sirectifier R