SII75N12

SII75N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol RthJC RthJCD o TC = 25oC, unless otherwise specified Conditions Values 1200 105(75) 210(150) _ +20 625 _ 40...+125(150) 2500 _ 0.2 < o Units V A A V W C TC= 25(80) C TC= 25(80)oC, tP =1ms _ TOPERATION < Tstg AC, 1min V K/W _ < 0.5 Sirectifier R SII75N12 NPT IGBT Modules Electeical Characteristics Symbol Conditions Static Characteristics VGE(th) VGE = VCE, IC =3mA ICES VGE = 0; VCE = 1200V; Tj = 25(125)oC IGES VGE = 20V, VCE = 0 VCE(sat) IC =75A; VGE = 15V; Tj = 25(125)oC; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres gfs VCE=20V, IC=75A Switching Characteristics td(on) VCC = 600V, IC = 75A tr RGon = RGoff =15 , Tj = 125oC td(off) VGE = ± 15V tf FWD under following conditions: VF IF = 75A, VGE = 0V, Tj = 25(125)oC trr IF =75A, VR=_ 600V, VGE=0V,di/dt= _900A/us, Tj = 125oC _ IF = 75A, VGE = 0V, VR= 600V Qrr _ 900A/us, Tj = 25(125)oC di/dt= Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 1(4.5) 2.5(3.1) 5.5 0.8 0.3 31 max. 6.5 1.5 320 3(3.7) Units V mA nA V nF S 30 70 450 70 2.3(1.8) 0.125 3.2(12) 60 140 600 100 2.8 ns V us uC Mechanical Data 5 5 160 Nm Nm g Sirectifier R SII75N12 NPT IGBT Modules Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 650 W 550 Ptot 500 450 400 350 300 250 10 ms Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 A IC t = 19.0µs p 10 2 100 µs 10 1 1 ms 200 10 0 150 100 50 0 0 20 40 60 80 100 120 °C 160 10 -1 0 10 10 1 DC 10 2 10 3 V TC VCE Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 120 A 100 IC 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 160 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 IGBT K/W ZthJC 10 -1 10 -2 D = 0.50 0.20 0.10 10 -3 single pulse 0.05 0.02 0.01 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Sirectifier R SII75N12 NPT IGBT Modules T yp. output c harac teris tic s IC = f (V C E ) parameter: tp = 8 0 µs , T j = 2 5 °C 150 A 130 T yp. output c harac teris tic s IC = f (V C E ) parameter: tp = 8 0 µs , T j = 1 25 °C 150 A IC 120 110 100 90 80 70 60 50 40 30 20 10 0 0 1 7V 1 5V 1 3V 1 1V 9V 7V 130 IC 120 110 100 90 80 70 60 50 40 30 20 10 0 1 7V 1 5V 1 3V 1 1V 9V 7V 1 2 3 V 5 0 1 2 3 V 5 VC E VCE T yp. trans fer c harac teris tic s IC = f (V G E ) parameter: tp = 8 0 µs , V C E = 2 0 V 150 A 130 IC 120 110 100 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 V 14 VGE Sirectifier R SII75N12 NPT IGBT Modules Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 75 A 20 V nF VGE 16 14 12 10 8 10 0 6 4 2 0 0 100 200 300 400 nC 550 10 -1 0 600 V 800 V T yp. c apac itanc es C = f (V C E ) parameter: V G E = 0 , f = 1 MHz 10 2 C 10 1 C is s C os s C rs s 5 10 15 20 25 30 QGate V VCE 40 R evers e bias ed s afe operating area I C puls = f(V C E ) , T j = 1 50°C parameter: V G E = 1 5 V 2.5 S hort c irc uit s afe operating area I C s c = f(V C E ) , T j = 1 50°C parameter: V G E = ± 1 5 V , tS C ≤ 1 0 µs , L < 50 nH 12 IC puls /I C IC sc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 200 400 600 800 1000 1200 V 1600 VC E 0 0 200 400 600 800 1000 1200 V 1600 VC E Sirectifier R SII75N12 NPT IGBT Modules T yp. s witc hing time I = f ( IC ) , inductive load , T j = 1 25°C par.: V C E = 6 00 V , V G E = ± 1 5V , R G = 1 5 Ω 10 4 T yp. s witc hing time t = f ( R G ) , inductive load , T j = 1 25°C par.: V C E = 6 00V , I C = 7 5 A 10 4 ns ns t 10 3 t tdoff 10 3 tdoff tr tdon 10 2 10 2 tr tf tdon tf 10 1 0 20 40 60 80 100 120 140 A 180 10 1 0 10 20 30 40 50 60 IC Ω 80 RG T yp. s witc hing los s es E = f ( IC ) , inductive load , T j = 1 25°C par.: V C E = 6 00 V , V G E = ± 1 5 V , R G = 1 5 Ω 40 T yp. s witc hing los s es E = f ( R G ) , inductive load , T j = 1 25°C par.: V C E = 6 00 V , V G E = ± 1 5 V , I C = 7 5 A 30 mWs E on mWs E on E 30 E 20 25 20 15 15 E off 10 E off 10 5 5 0 0 0 0 20 40 60 80 100 120 140 A 180 10 20 30 40 50 60 IC Ω 80 RG Sirectifier R SII75N12 NPT IGBT Modules F orward c harac teris tic s of fas t rec overy revers e diode IF = f(V F ) parameter: T j 150 A 130 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 Diode K/W ZthJC IF 120 110 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -1 T j=125°C T j=25°C 10 -2 D = 0.50 0.20 0.10 10 -3 0.05 single pulse 0.02 0.01 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Sirectifier R