SMOS48N50

SMOS44N50, SMOS48N50 Power MOSFETs S D Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 S G L M N O P Q G=Gate, D=Drain,S=Source R S T U V W Symbol VDSS VDGR VGS VGSM ID25 TJ=25oC to 150oC Test Conditions Maximum Ratings 500 500 ±20 ±30 44N50 48N50 44 48 176 192 24 30 Unit V TJ=25 C to 150 C; RGS=1M Continuous Transient TC=25oC TC=25oC; pulse width limited by TJM TC=25oC TC=25 C IS TJ IDM; di/dt o o o o V A IDM 44N50 48N50 A A mJ V/ns IAR EAR dv/dt 100A/us; VDD VDSS' 5 150 C; RG=2 520 -55...+150 150 -55...+150 o PD TJ TJM Tstg TL VISOL TC=25oC W C 1.6mm(0.063 in.) from case for 10s 50/60Hz,RMS IISOL 1mA t=1 min t=1 s 2500 3000 1.5/13 1.5/13 30 o C V~ Md Mounting torque Terminal connection torque Nm/Ib.in. g Weight SMOS44N50, SMOS48N50 Power MOSFETs (TJ=25oC, unless otherwise specified) Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions VGS=0V; ID=1 mA VDS=VGS; ID=8 mA VGS=±20VDC; VDS=0 VDS=0.8VDSS; TJ=25oC VGS=0V; TJ=125oC VGS=10V; ID=0.5ID25 44N50 48N50 Pulse test, t 300us, duty cycle d Characteristic Values min. typ. max. 500 2 4 ±200 400 2 0.12 0.10 2% (TJ=25oC, unless otherwise specified) Symbol gts Cies Coes Cres Qg(on) Qgs Qgd td(on) tr td(off) tf RthJC RthCK Test Conditions VDS=10V; ID=0.5ID25; pulse test VGS=0V; VDS=25V; f=1MHz Characteristic Values min. typ. max. 22 42 8400 900 280 270 60 135 30 60 100 30 0.24 0.05 Unit S pF Unit V V nA uA mA VGS=10V; VDS=0.5VDSS'; ID=0.5ID25 nC ns ns ns ns K/W K/W VGS=10V; VDS=0.5VDSS; ID=0.5ID25 RG=1 (External) Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS=0V Repetitive; pulse width limited by TJM IF=100A; VGS=0V; Pulse test, t 300us, duty cycle d IF=IS; -di/dt=100A/us; VR=100V; 2% (TJ=25oC, unless otherwise specified) Characteristic Values min. typ. max. 48 192 1.5 250 TBD 20 Unit A A V ns uC A