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STPR2020CT

STPR2020CT

  • 厂商:

    SIRECTIFIER

  • 封装:

  • 描述:

    STPR2020CT - Ultra Fast Recovery Diodes - Sirectifier Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
STPR2020CT 数据手册
STPR2010CT thru STPR2020CT Ultra Fast Recovery Diodes Dimensions TO-220AB A C(TAB) A C A C A Dim. A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode STPR2010CT STPR2020CT VRRM V 100 200 VRMS V 70 140 VDC V 100 200 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Symbol I(AV) IFSM Characteristics Maximum Average Forward Rectified Current @TC=95oC Maximum Ratings 20 125 1.1 1.0 1.25 1.20 5 100 100 35 1.5 -55 to +150 Unit A A Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At Pulse Width=300us 2% Duty Cycle Maximum DC Reverse Current At Rated DC Blocking Voltage IF=10A IF=10A IF=20A IF=20A @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC @TJ=25oC @TJ=100oC VF V IR CJ TRR ROJC uA pF ns o Typical Junction Capacitance Per Element (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance (Note 3) C/W o TJ, TSTG Operating And Storage Temperature Range NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case. C FEATURES * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacity MECHANICAL DATA * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any STPR2010CT thru STPR2020CT Ultra Fast Recovery Diodes 20 PEAK FORW ARD SURGE CURRENT, AMPERES FIG.1 - FORW ARD CURRENT DERATING CURVE AVERAGE FORW ARD CURRENT AMPERES FIG.2 - MAXIMUM NON-REPET ITIVE SURGE CURRENT 150 125 100 75 50 25 0 1 2 5 10 20 50 100 15 10 5 RESISTIVE OR INDUCTIVE LOAD Single Half-Sine-Wave (JEDEC METHOD) 0 25 50 75 100 125 150 175 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERIST ICS 1000 FIG.4 - TYPICAL FORW ARD CHARACT ERISTICS 100 INSTANTANEOUS FORW ARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(uA) 100 TJ = 125 C TJ = 125 C 10 TJ = 25 C 10 TJ = 100 C 1.0 1.0 0.1 TJ = 25 C .01 0 20 60 100 120 0.1 0 0.2 0.4 0.6 0.8 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) PULSE W IDTH 300ua s 2% Duty cycle 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORW ARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 CAPACIT ANCE , (pF) 100 TJ = 25 C, f= 1MHz 10 0.1 1 4 10 100 REVERSE VO LTAGE , VO LTS
STPR2020CT
1. 物料型号: - STPR2010CT - STPR2020CT

2. 器件简介: - 这些是超快速回复二极管,具有超快的开关时间,用于提高效率,低正向电压降和高电流能力,低反向漏电流和高浪涌容量。

3. 引脚分配: - A=阳极,C=阴极,TAB=阴极。

4. 参数特性: - VRRM:反向工作电压 - VRMS:反向连续工作电压 - VDC:反向阻断电压 - 最大平均正向整流电流(I(AV)):20A - 正向峰值浪涌电流(IFSM):125A - 正向最大电压(VF):在不同条件下为1.1V至1.25V - 最大直流反向电流(IR):在不同温度下为5μA至100μA - 典型结电容每元件(CJ):100pF - 最大反向恢复时间(TRR):35ns - 典型热阻(ReJc):1.5°C/W - 工作和储存温度范围(TJ, TSTG):-55至+150°C

5. 功能详解: - 快速开关时间,低正向电压降,高电流能力,低反向漏电流和高浪涌容量。 - 玻璃钝化芯片,有助于提高可靠性和性能。

6. 应用信息: - 这些二极管适用于需要快速开关和高效率的应用场合。

7. 封装信息: - 封装类型:TO-220AB塑料模塑 - 极性:如管体上标记 - 重量:0.08盎司,2.24克 - 安装位置:任意
STPR2020CT 价格&库存

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