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STPR805DB

STPR805DB

  • 厂商:

    SIRECTIFIER

  • 封装:

  • 描述:

    STPR805DB - Ultra Fast Recovery Diodes - Sirectifier Semiconductors

  • 数据手册
  • 价格&库存
STPR805DB 数据手册
STPR805DB thru STPR820DB Ultra Fast Recovery Diodes Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode VRRM V 50 100 150 200 VRMS V 35 70 105 140 VDC V 50 100 150 200 STPR805DB STPR810DB STPR815DB STPR820DB Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol I(AV) IFSM VF IR CJ TRR ROJC Characteristics Maximum Average Forward Rectified Current @TC=125 oC Maximum Ratings 8.0 100 1.3 0.8 10 500 45 25 3.0 -55 to +150 Unit A A V uA pF ns o Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage IF=8A Maximum DC Reverse Current At Peak Reverse Voltage Typical Junction Capacitance (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance (Note 3) @TJ=25oC @TJ=150oC @TJ=25oC @TJ=100oC C/W o TJ, TSTG Operating And Storage Temperature Range NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case. C FEATURES * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacity MECHANICAL DATA * Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any STPR805DB thru STPR820DB Ultra Fast Recovery Diodes 10 WITH HEATSINK TC PEAK FORW ARD SURGE CURRENT , AMPERES FIG.1 - FORW ARD CURRENT DERATING CURVE AVERAGE FORW ARD CURRENT AMPERES FIG.2 - MAXIMUM NON-REPET ITIVE SURGE CURRENT 150 125 100 75 50 25 0 1 2 5 10 20 50 100 8 6 FREE AMBIENT TA 4 2 RESISTIVE OR INDUCTIVE LOAD 8.3ms Single Half-Sine-W ave (JEDEC METHOD) 0 0 25 50 75 100 125 150 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERIST ICS 100.0 FIG.4 - TYPICAL FORW ARD CHARACTERISTICS 100 INSTANTANEOUS FORW ARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(uA) 10.0 TJ = 125 C TJ = 100 C 10 TJ = 150 C TJ = 25 C 1.0 TJ = 25 C 0.1 1.0 0.01 0.001 0 20 40 60 80 100 120 140 0.1 0 0.2 0.4 0.6 0.8 1.0 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) PULSE W IDTH 300us 2% Duty cycle 1.2 1.4 1.6 1.8 INSTANTANEOUS FORW ARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 CAPACIT ANCE , (pF) 100 TJ = 25 C, f= 1MHz 10 0.1 1 4 10 100 REVERSE VO LTAGE , VO LTS
STPR805DB 价格&库存

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