STYN1012

STYN212(S) thru STYN1012(S) Discrete Thyristors(SCRs) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 G A K A G K Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 Dimensions TO-263(D2PAK) A Dim. A A1 b b2 G K c c2 D D1 E E1 e 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029 L L1 L2 L3 L4 R ABSOLUTE R ATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current I²t V alue for fusing Critical rate of rise of on-state current _ IG = 2 x IGT , tr < 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage (for TN8 & TYN only) tp = 8.3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 µs Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C Tc = 105°C Tc = 105°C Value 12 8 146 140 98 50 4 1 - 40 to + 150 - 40 to + 125 5 A2S A/µs A W °C V Unit A A A I ²t dI/dt IGM PG(AV) Tstg Tj VRGM STYN212(S) thru STYN1012(S) Discrete Thyristors(SCRs) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) s STA NDARD Symbol IGT VD = 12 V VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM ITM = 24 A Gate open Tj = 125°C Tj = 25°C Tj = 125° C Tj = 125°C Tj = 25°C Tj = 125°C RL = 3.3 kW Gate open Tj = 125°C RL = 33 W Test Conditions MIN. MAX. MAX. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. TYNx08(S) 2 15 1.3 0.2 30 60 200 1.6 0.85 30 5 2 V V mA mA V/µs V V mW µA mA Unit mA tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM THERMA L RESISTANCES Symbol Rth(j-c) Rth(j-a) J unction to case (DC) Junction to ambient S = 1.0 cm ² S= copper surface under tab Parameter Value 1.3 TO-220AB TO-263 60 45 Unit °C/W °C/W PRODUCT SELECTOR Voltage (xxx) Par t Num ber Sen sitivi ty Package STYN x12S S T Y N x12 200~~1000 200~~1000 15 mA 15 mA TO-263 T O-2 20AB OTHER INFORMATION Part Number STYN x12S S T Y N x12 No t e: x = voltage Marking STYN x12S S T Y N x12 Weight 0.5 g 2.3 g Base Quantity 50 250 Packing mode Tu be B ulk