STYN225(S) thru STYN1025(S)
Discrete Thyristors(SCRs)
Dimensions TO-220AB
Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89
G A K
A
G K
Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79
Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350
Dimensions TO-263(D2PAK) AA
Dim. A A1 b b2 c c2 D D1 E E1 e
G K
9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74
.380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029
1. 2. 3. 4.
Gate Collector Emitter Collector Botton Side
L L1 L2 L3 L4 R
ABSOLUTE R ATINGS (limiting values)
Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current I²t V alue for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr £ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage (for TN8 & TYN only) tp = 8.3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 µs Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C Tc = 100°C Tc = 100°C Value 25 16 314 300 450 50 4 1 - 40 to + 150 - 40 to + 125 5 A2S A/µs A W °C V Unit A A A
I ²t dI/dt IGM PG(AV) Tstg Tj VRGM
STYN225(S) thru STYN1025(S)
Discrete Thyristors(SCRs)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s
STA NDARD
Symbol IGT VD = 12 V VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM ITM = 16 A Gate open Tj = 125°C Tj = 25°C Tj = 125° C Tj = 125°C Tj = 25°C Tj = 125°C RL = 3.3 kW Gate open Tj = 125°C RL = 33 W Test Conditions MIN. MAX. MAX. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. TYNx08(S) 4 40 1.3 0.2 50 90 1000 1.6 0.77 14 5 4 V V mA mA V/µs V V mW µA mA Unit mA
tp = 380 µs
Threshold voltage Dynamic resistance VDRM = VRRM
THERMA L RESISTANCES
Symbol Rth(j-c) Rth(j-a) J unction to case (DC) Junction to ambient (DC) S = 1.0 cm ²
S= copper surface under tab
Parameter
Value 1.0 TO-220AB TO-263 60 45
Unit °C/W °C/W
PRODUCT SELECTOR
Voltage (xxx) Par t Num ber Sen sitivi ty Package
STYN x25S
S T Y N x25
200~~1000 200~~1000
40 mA 40 mA
TO-263 T O-2 20AB
OTHER INFORMATION
Part Number STYN x25S S T Y N x25
No t e: x = voltage
Marking STYN x25S S T Y N x25
Weight 0.5 g 2.3 g
Base Quantity 50 250
Packing mode Tu be B ulk
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