STYN225

STYN225

  • 厂商:

    SIRECTIFIER(矽莱克)

  • 封装:

  • 描述:

    STYN225 - Discrete Thyristors(SCRs) - Sirectifier Semiconductors

  • 数据手册
  • 价格&库存
STYN225 数据手册
STYN225(S) thru STYN1025(S) Discrete Thyristors(SCRs) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 G A K A G K Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 Dimensions TO-263(D2PAK) AA Dim. A A1 b b2 c c2 D D1 E E1 e G K 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side L L1 L2 L3 L4 R ABSOLUTE R ATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current I²t V alue for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr £ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage (for TN8 & TYN only) tp = 8.3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 µs Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C Tc = 100°C Tc = 100°C Value 25 16 314 300 450 50 4 1 - 40 to + 150 - 40 to + 125 5 A2S A/µs A W °C V Unit A A A I ²t dI/dt IGM PG(AV) Tstg Tj VRGM STYN225(S) thru STYN1025(S) Discrete Thyristors(SCRs) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) s STA NDARD Symbol IGT VD = 12 V VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM ITM = 16 A Gate open Tj = 125°C Tj = 25°C Tj = 125° C Tj = 125°C Tj = 25°C Tj = 125°C RL = 3.3 kW Gate open Tj = 125°C RL = 33 W Test Conditions MIN. MAX. MAX. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. TYNx08(S) 4 40 1.3 0.2 50 90 1000 1.6 0.77 14 5 4 V V mA mA V/µs V V mW µA mA Unit mA tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM THERMA L RESISTANCES Symbol Rth(j-c) Rth(j-a) J unction to case (DC) Junction to ambient (DC) S = 1.0 cm ² S= copper surface under tab Parameter Value 1.0 TO-220AB TO-263 60 45 Unit °C/W °C/W PRODUCT SELECTOR Voltage (xxx) Par t Num ber Sen sitivi ty Package STYN x25S S T Y N x25 200~~1000 200~~1000 40 mA 40 mA TO-263 T O-2 20AB OTHER INFORMATION Part Number STYN x25S S T Y N x25 No t e: x = voltage Marking STYN x25S S T Y N x25 Weight 0.5 g 2.3 g Base Quantity 50 250 Packing mode Tu be B ulk
STYN225 价格&库存

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