CGA-3318

Product Description Sirenza Microdevice’s CGA-3318 is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. The CGA-3318 contains two amplifiers for use in wideband Push-Pull CATV amplifiers requiring excellent second order performance. The second and third order non-linearities are greatly improved in the push pull configuration. CGA-3318 CGA-3318Z Pb RoHS Compliant & Green Package Dual CATV Broadband High Linearity SiGe HBT Amplifier Amplifier Configuration 1 2 3 4 8 7 6 5 Product Features • Available in Lead free, RoHS compliant, & Green packaging • Excellent CSO/CTB/XMOD Performance at • • +34 dBmV Output Power per Tone Dual Devices in each SOIC-8 Package simplify Push-Pull configuration PC board layout 5 to 900 MHz operation ELECTRICAL SPECIFICATIONS S ym bol P a ra m e te r Applications • CATV Head End Driver and Predriver Amplifier • CATV Line Driver Amplifier F re q .(M H z ) 5 50 500 870 50 250 500 50 500 870 50 500 870 500 5 0 -8 7 0 500 5 0 -8 7 0 50 500 870 M in . Ty p . 1 3 .2 1 2 .5 1 2 .5 1 2 .0 6 9 .0 7 1 .5 6 9 .0 3 6 .5 3 8 .0 3 8 .0 2 0 .0 2 1 .0 2 0 .6 1 7 .0 10 1 2 .0 10 4 .2 4 .3 5 .0 70 68 63 3 .9 135 4 .1 150 50 4 .3 165 Max. U n its G S m a ll S ig na l G a in dB 1 0 .0 O IP 2 O utp ut S e c o nd O rd e r Inte rc e p t P o int To ne S p a c ing = 1 M H z, P o ut p e r to ne = + 6 d B m O utp ut Third O rd e r Inte rc e p t P o int To ne S p a c ing = 1 M H z, P o ut p e r to ne = + 6 d B m O utp ut P o w e r a t 1 d B G a in C o m p re s s io n dBm 6 7 .0 O IP 3 dBm 3 6 .0 P1dB dBm 1 8 .6 IR L ORL Inp ut R e turn L o s s O utp ut R e turn L o s s N o is e F ig ure B a lun Ins e rtio n L o s s Inc lud e d W o rs t C a s e O ve r B a nd , 7 9 C h., F la t, + 3 4 d B m V W o rs t C a s e O ve r B a nd , 7 9 C h., F la t, + 3 4 d B m V W o rs t C a s e O ve r B a nd , 7 9 C h., F la t, + 3 4 d B m V D e vic e O p e ra ting V o lta g e D e vic e O p e ra ting C urre nt The rm a l R e s is ta nc e (J unc tio n to L e a d ) dB dB NF CSO C TB XMOD VD ID R T H (J -L ) dB 6 .0 dBc dBc dBc V mA °C /W The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101993 Rev H CGA-3318 Dual SiGe HBT Amplifier Absolute Maximum Ratings Parameter Max Device Current (ID) Max Device Voltage (VD) Max. RF Input Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. Absolute Limit 225 mA 6V +18 dBm +150°C -40°C to +85°C +150°C Reliability & Qualification Information Parameter ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level www.sirenza.com Rating Class 1B MSL 1 This product qualification report can be downloaded at Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: TL=TLEAD IDVD < (TJ - TL) / RTH, j-l Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Typical RF Performance: VS=8V, ID=150mA @ TL=+25°C, RBIAS=51 Ohms, Push-Pull Configuration Gain vs. Frequency 16 14 12 |S21| (dB) 10 8 6 0 100 200 300 400 500 600 700 +25°C -40°C +85°C 800 900 1000 Frequency (MHz) Input Return Loss vs. Frequency 0 -5 -10 0 -2 -4 -6 -8 +25°C -40°C +85°C Output Return Loss vs. Frequency |S11| (dB) -15 -20 -25 -30 0 100 200 300 400 500 600 700 800 900 1000 +25°C -40°C +85°C |S22| (dB) -10 -12 -14 -16 -18 -20 0 100 200 300 400 500 600 700 800 900 1000 Frequency (MHz) Frequency (MHz) 75 Ohm Push Pull S-parameters are available for download at www.sirenza.com 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101993 Rev H CGA-3318 Dual SiGe HBT Amplifier Typical RF Performance: VS=8V, ID=150mA @ TL=+25°C, RBIAS=51 Ohms, Push-Pull Configuration 50 45 40 IP3 vs. Temperature 80 75 70 IP2 vs. Temperature IP3 (dBm) IP2 (dBm) 35 -40C 30 25 20 0 0.2 0.4 0.6 0.8 1 25C 85C 65 60 55 50 0 0.2 0.4 0.6 0.8 1 -40°C +25°C +85°C Frequency (GHz) Second Harmonic vs. Pout and Frequency Data shown is typical at 25C 100 90 80 Frequency (GHz) Third Harmonic vs. Pout and Frequency Data shown is typical at 25C 100 90 80 IM2 (dBc) IM3 (dBc) 70 60 50 40 30 20 0 3 6 9 12 15 66MHz 100MHz 250MHz 500MHz 70 60 50 40 30 20 0 3 6 9 12 15 66MHz 100MHz 250MHz 500MHz Pout (dBm) Pout (dBm) Push-Pull Noise Figure 50MHz-900MHz Typical 6 5 4 100 90 80 Push-Pull CTB/CSO/XMOD 34 dBmV/Ch., 79 Ch., Flat NF (dB) 3 2 1 0 0 200 400 600 800 1000 dBc 70 60 CTB 50 40 0 100 200 300 400 500 600 CSO+ CSOXmod Frequency (MHz) Frequency (MHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101993 Rev H CGA-3318 Dual SiGe HBT Amplifier CSO/CTB/XMOD Performance: VS=8V, ID=150mA @ TL=+25°C, RBIAS=51 Ohms, Push-Pull Config, 79 Ch. Flat Analog, No Digital Channels. 100 90 80 Push-Pull CTB vs. Pout and Frequency 100 Push-Pull XMOD vs. Pout and Frequency 32dBmV 90 38dBmV 80 40dBmV 42dBmV 34dBmV 36dBmV 32dBmV 38dBmV 34dBmV 40dBmV 36dBmV 42dBmV dBc 70 60 50 40 0 100 200 300 400 500 600 dBc 70 60 50 40 0 100 200 300 400 500 600 Frequency (MHz) Frequency (MHz) Push-Pull CSO- vs. Pout and Frequency 100 90 80 100 90 80 Push-Pull CSO+ vs. Pout and Frequency dBc 70 60 32dBmV 50 40 0 100 200 300 400 500 600 38dBmV 34dBmV 40dBmV 36dBmV 42dBmV dBc 70 60 50 40 0 100 200 300 400 500 600 32dBmV 38dBmV 34dBmV 40dBmV 36dBmV 42dBmV Frequency (MHz) Frequency (MHz) Note: CSO measurements > 85 dBc can be limited by system noise. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101993 Rev H CGA-3318 Dual SiGe HBT Amplifier Typical RF Performance - Single Ended - 50 Ohm System VS=8V, ID=75mA (one amp biased), TL=+25°C, RBIAS=51 Ohms Gain & Isolation vs. Frequency 16 14 12 Gain 0 -4 -8 |S11| & |S22| vs. Frequency 0 -5 -10 Gain (dB) Isolation (dB) 10 8 6 Isolation 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -12 -16 -20 -24 -28 -32 -15 |S11| dB -20 -25 -30 -35 -40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 |S22| Frequency (GHz) Frequency (GHz) Typical RF Performance - Single Ended - 37.5 Ohm System VS=8V, ID=75mA (one amp biased), TL=+25°C, RBIAS=51 Ohms Gain & Isolation vs. Frequency 16 14 12 Gain 0 -4 -8 0 -5 -10 |S11| & |S22| vs. Frequency |S22| Isolation (dB) Gain (dB) 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Isolation -12 -16 -20 -24 -28 -32 -15 dB -20 -25 -30 -35 -40 0.0 |S11| 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) Frequency (GHz) 50 Ohm and 37.5 Ohm Single Ended S-parameter files are available for download at www.sirenza.com 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-101993 Rev H CGA-3318 Dual SiGe HBT Amplifier Pin # 1 2,3 4 Function RF IN Device 1 Ground RF IN Device 2 Description RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the schematic. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. Same as pin 1 2 Device Pin Out 1 8 5 RF output and bias pin. Bias should be supplied to this pin through an external series resistor RF OUT / Vcc and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor Device 2 should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. Ground Same as pins 2 and 3 7 3 6 6,7 8 RF OUT / Vcc Same as pin 5 Device 1 Ground Exposed area on the bottom side of the package must be soldered to the ground plane of the board for optimum thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern on page 5. 4 5 EPAD 50-870 MHz Application Schematic Vs RBIAS 1µF Tant. 0.01µF 1000pF 50-870 MHz Evaluation Board Layout Rbias 68pF 1uF Tant. RF INPUT RF OUTPUT .01uF 1000pF 68pF Balun ETC1-1-13 220nH 1000pF 1000pF Balun ETC1-1-13 220 nH 1 8 Amp 1 Macom ETC1-1-13 1000 pF 2,3 6,7 1000 pF 1000pF 220nH 1000pF 68pF 1000pF .01uF 1000 pF 4 Amp 2 5 1000 pF Macom ETC1-1-13 CGA-3318 SOIC-08 1µF Tant. 0.01µF 220 nH 1uF Tant. ECB-101611 Rev A ESOP-8 Push-Pull Eval Board Rbias 1000pF 68pF RBIAS Vs Recommended Bias Resistor Values for ID= 150mA Supply Voltage (VS) RBIAS RBIAS Power Rating 8V 51Ω 1/2W 9V 62Ω 1/2W 12V 100Ω 1W 15V 150Ω 1W Part Number Ordering Information Part Number CGA-3318 CGA-3318Z Reel Size 7" 7" Devices / Reel 500 500 RBIAS= 303 S. Technology Ct. Broomfield, CO 80021 2(VS-VD) ID Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-101993 Rev H CGA-3318 Dual SiGe HBT Amplifier Typical 5-100 MHz RF Performance: VS=8V, ID=150mA @ TL=+25°C, Push-Pull Configuration Gain vs. Frequency 16 14 12 Return Loss vs. Frequency 0 -5 |S11| and |S22| (dB) -10 |S22| -15 -20 -25 -30 |S11| |S21| (dB) 10 8 6 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 Frequency (MHz) 22 21 20 19 18 17 16 0 10 20 30 40 50 60 70 80 P1dB IP3 Frequency (MHz) Noise Figure vs. Frequency 8 7 6 P1dB and IP3 vs. Frequency 40 39 P1dB (dBm) IP3 (dBm) 38 37 36 35 NF (dB) 5 4 3 2 1 34 90 100 110 0 0 10 20 30 40 50 60 70 80 90 100 110 Frequency (MHz) Frequency (MHz) 5-100 MHz Application Schematic Vs RBIAS 1µF Tant. 0.01µF 1000pF 68pF 5-100 MHz Evalution Board Layout Rbias 1uF Tant. RF INPUT 10 µΗ 1 8 Amp 1 RF OUTPUT .01uF 1000pF 68pF Balun ETC1-1T 0.01uF 10uH 0.01uF Balun ETC1-1T Macom ETC1-1T 0.01 µF 2,3 6,7 0.01 µF 0.01 µF 4 Amp 2 5 0.01 µF Macom ETC1-1T 0.01uF 10uH 0.01uF 68pF 1000pF .01uF CGA-3318 SOIC-08 1µF Tant. 0.01µF 10 µΗ 1uF Tant. 1000pF 68pF ECB-101611 Rev A ESOP-8 Push-Pull Eval Board RBIAS Rbias Vs 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 7 http://www.sirenza.com EDS-101993 Rev H CGA-3318 Dual SiGe HBT Amplifier PCB Pad Layout Dimensions in inches [millimeters] Sized for 31 mil thick FR-4 Nominal Package Dimensions & Package Marking Dimensions in inches [millimeters ] Refer to package drawing posted at www.sirenza.com for tolerances. Lot Code CGA3318 Lot Code CGA3318Z Tin-Lead Lead Free 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 8 http://www.sirenza.com EDS-101993 Rev H