CGA-6618Z

CGA-6618 Product Description Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. The CGA-6618 contains two amplifiers for use in wideband Push-Pull CATV amplifiers requiring excellent second order performance. The second and third order non-linearities are greatly improved in the push pull configuration. CGA-6618Z Pb RoHS Compliant & Green Package Preliminary Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS • Now available in Lead Free, RoHS compliant per EU Directive 2002/95. This package is also manuCompliant, & Green Packaging factured with green molding compounds that contain no antimony • Excellent CSO/CTB/XMOD at trioxide nor halogenated fire retardants. +34 dBmV Output Power per Tone 1 8 7 6 5 Product Features • Dual Devices in each SOIC-8 Package simplify Push-Pull configuration PC board layout Amplifier Configuration 2 3 4 Applications • CATV Head End Driver and Predriver Amplifier • CATV Line Driver Amplifier ELECTRICAL SPECIFICATIONS S ym bol P a ra m e te r F re q .(M H z ) 50 500 870 1000 50 250 500 50 500 870 50 500 870 500 1 0 0 -8 7 0 500 1 0 0 -8 7 0 50 500 870 M in . Ty p . 1 3 .8 1 4 .1 1 3 .4 1 3 .0 7 6 .5 7 7 .5 7 2 .0 3 8 .0 3 9 .0 4 0 .0 2 0 .0 2 1 .0 2 1 .5 1 5 .5 10 1 2 .5 9 .0 5 .3 5 .4 5 .6 81 70 63 4 .8 144 5 .1 160 35 TL = 25ºC ZS = ZL = 75 Ohms Push Pull Application Circuit M ax. U n its G S m a ll S i g n a l G a i n 1 2 .4 1 2 .0 1 4 .4 1 4 .0 dB O IP 2 O u tp ut S e c o n d O rd e r Inte rc e p t P o in t To n e S p a c i ng = 1 M H z, P o u t p e r to ne = + 6 d B m O u tp ut T hi rd O rd e r In te rc e p t P o in t To n e S p a c i ng = 1 M H z, P o u t p e r to ne = + 6 d B m O u tp ut P o w e r a t 1 d B G a in C o m p re s s i o n dBm 7 0 .0 O IP 3 dBm 3 8 .0 P1dB dBm 1 9 .5 IR L ORL Inp ut R e turn L o s s O u tp ut R e turn L o s s N o is e F i g ure B a lun Ins e rtio n L o s s Inc lud e d W o rs t C a s e O ve r B a n d , 7 9 C h., F la t, + 3 4 d B m V W o rs t C a s e O ve r B a n d , 7 9 C h., F la t, + 3 4 d B m V W o rs t C a s e O ve r B a n d , 7 9 C h., F la t, + 3 4 d B m V D e vi c e O p e ra ting V o lta g e D e vi c e O p e ra ting C urre n t T he rm a l R e s is ta nc e (J unc ti o n to L e a d ) Test Conditions: VS = 8 V ID = 160 mA Typ. RBIAS = 33 Ohms dB dB NF CSO C TB XMOD VD ID R T H (J -L ) dB 6 .6 dBc dBc dBc 5 .4 176 V mA °C /W The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101994 Rev J CGA-6618 Dual GaAs HBT Amplifier Absolute Maximum Ratings Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I DVD < ( TJ - TL) / RTH, j-l Parameter Max. Device Current (I D) Max. Device Voltage (VD) Max. RF Input Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. Absolute Limit 240 mA 7V +20 dBm +150°C -40°C to +85°C +150°C Typical RF Performance: VS=8V, ID=160mA @ TL=+25°C, RBIAS=33 Ohms, Push-Pull Config. Gain vs. Frequency 18 17 16 -40C +25C +85C Gain (dB) 15 14 13 12 11 10 0 100 200 300 400 500 600 700 800 900 1000 Frequency (MHz) |S11| (dB) vs. Frequency 0 -2 -4 -6 -40C +25C +85C |S22| (dB) vs. Frequency 0 -2 -4 -6 -40C +25C +85C |S11| (dB) |S22| (dB) -8 -10 -12 -14 -16 -18 -20 0 100 200 300 400 500 600 700 800 900 1000 -8 -10 -12 -14 -16 -18 -20 0 100 200 300 400 500 600 700 800 900 1000 Frequency (MHz) Frequency (MHz) 75 Ohm Push Pull S-parameters are available for download at www.sirenza.com 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101994 Rev J CGA-6618 Dual GaAs HBT Amplifier Typical RF Performance: VS=8V, ID=160mA @ TL=+25°C, RBIAS=33 Ohms, Push-Pull Config. Third Order Intercept Point vs. Frequency over Temperature 50 90 Second Order Intercept Point vs. Frequency over Temperature 45 85 40 80 IP3 (dBm) IP2 (dBm) -40C +25C 35 75 30 70 -40C 65 +25C +85C 25 +85C 20 0 100 200 300 400 500 600 700 800 900 1000 60 0 50 100 150 200 250 300 350 400 450 500 550 Freq. (MHz) Second Harmonic vs. Pout and Freq. Data shown is typical at 25C 100 100 Freq. (MHz) Third Harmonic vs. Pout and Freq. Data shown is typical at 25C 90 90 80 80 IM2 (dBc) IM3 (dBc) 70 66MHz 100MHz 50 250MHz 500MHz 40 0 1 2 3 4 5 6 70 66MHz 100MHz 50 250MHz 500MHz 40 0 1 2 3 4 5 6 60 60 Pout (dBm) Pout (dBm) CTB/CSO/XMOD 34dBmV/Chan., Flat 100 Noise Figure vs. Frequency Over Temperature 8.0 7.0 90 6.0 80 5.0 NF(dB) dBc -40C +25C +85 4.0 3.0 2.0 1.0 0.0 0 100 200 300 400 500 600 700 800 900 1000 70 60 Xmod CSO+ 40 0 50 100 150 200 250 300 350 400 450 500 550 600 CTB CSO- 50 Freq. (MHz) Freq. (MHz) 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101994 Rev J CGA-6618 Dual GaAs HBT Amplifier CSO/CTB/XMOD Performance: VS=8V, ID=150mA @ TL=+25°C, RBIAS=39 Ohms, Push-Pull Config, 79 Ch. Flat Analog, No Digital Channels. Push-Pull CGA-6618 CTB vs. Pout and Freq. 100 32dBmV 90 36dBmV 40dBmV 80 34dBmV 38dBmV 42dBmV 80 90 100 Push-Pull CGA-6618 XMOD vs. Pout and Freq. 32dBmV 36dBmV 40dBmV 34dBmV 38dBmV 42dBmV dBc 70 dBc 0 100 200 300 400 500 600 70 60 60 50 50 40 40 Frequency (MHz) 0 100 200 300 400 500 600 Frequency (MHz) Push-Pull CGA-6618 CSO- vs. Pout and Freq. 100 100 Push-Pull CGA-6618 CSO+ vs. Pout and Freq. 90 90 80 80 dBc 70 dBc 70 60 60 32dBmV 50 36dBmV 40dBmV 40 0 100 200 300 400 500 600 0 100 200 300 400 500 600 34dBmV 38dBmV 42dBmV 32dBmV 50 36dBmV 40dBmV 40 34dBmV 38dBmV 42dBmV Frequency (MHz) Frequency (MHz) Note: CSO measurements > 85 dBc can be limited by system noise. 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101994 Rev J CGA-6618 Dual GaAs HBT Amplifier Typical RF Performance - Single Ended - 50 Ohm System VS=8V, ID=80mA (one amp biased), TL=+25°C, RBIAS=33 Ohms Gain & Isolation vs. Frequency 18 16 14 12 0 -4 -8 |S11| & |S22| vs. Frequency 0 -5 -10 Isolation (dB) -12 -16 -20 -24 Gain (dB) Isolation (dB) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gain (dB) -15 dB 10 8 6 4 2 0 -20 -25 -30 -35 -40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 |S11| |S22| -28 -32 -36 Frequency (GHz) Frequency (GHz) Typical RF Performance - Single Ended - 37.5 Ohm System VS=8V, ID=80mA (one amp biased), TL=+25°C, RBIAS=33 Ohms Gain & Isolation vs. Frequency 18 16 14 12 0 -4 -8 0 -5 -10 |S11| & |S22| vs. Frequency Isolation (dB) -12 -16 -20 -24 Gain (dB) Isolation (dB) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -28 -32 -36 -15 Gain (dB) dB 10 8 6 4 2 0 -20 -25 -30 -35 -40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 |S11| |S22| Frequency (GHz) Frequency (GHz) 50 Ohm and 37.5 Ohm Single Ended S-parameter files are available for download at www.sirenza.com 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-101994 Rev J CGA-6618 Dual GaAs HBT Amplifier Pin # 1 2,3,6,7 4 Function RF IN Device 1 Ground RF IN Device 2 Description RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the schematic. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. Same as pin 1 2 1 Device Pin Out 8 7 5 RF output and bias pin. Bias should be supplied to this pin through an external series RF OUT / Vcc resistor and RF choke inductor. Because DC biasing is present on this pin, a DC Device 2 blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. RF OUT / Vcc Same as pin 5 Device 1 Ground Exposed area on the bottom side of the package must be soldered to the ground plane of the board for proper thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern on page 5. 3 6 8 4 5 EPAD Basic Application Schematic 50-870 MHz Vs RBIAS 1µF Tant. 0.01µF 1000pF 68pF Evaluation Board Layout 50-870 MHz Rbias 1uF Tant. RF INPUT .01uF 1000pF 68pF Balun ETC1-1-13 220nH 1000pF 1000pF Balun ETC1-1-13 RF OUTPUT 220 nH 1 8 Amp 1 Macom ETC1-1-13 1000 pF 2,3 6,7 1000 pF 1000pF 220nH 1000pF 68pF 1000pF .01uF 1000 pF 4 Amp 2 5 1000 pF Macom ETC1-1-13 1uF Tant. CGA-6618 SOIC-08 1µF Tant. 0.01µF 220 nH Rbias ECB-101611 Rev A ESOP-8 Push-Pull Eval Board 1000pF 68pF PCB Recommendations RBIAS Vs R ecommended B ias R esistor Values for ID =150mA R B IAS =2 ( V S -V D ) / ID S upply Voltage(V S ) R BIAS 8V 33 9V 47 12 V 82 15 V 120 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Note: R B IA S p rovides D C bias stability over temperature. Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Identification Marking Part Number Ordering Information CGA-6618 CGA-6618Z Part Number Reel Size Devices/Reel CGA-6618 CGA-6618Z 7" 7" 500 500 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-101994 Rev J CGA-6618 Dual GaAs HBT Amplifier 5 - 100 MHz Application Circuit: VS=8V, ID=160mA @ TL=+25°C, Push-Pull Config. G a in v s . F re q u e n c y 16 0 R e tu rn L o s s v s . F re q u e n c y -5 14 |S 11 | and |S 22 | (dB) -10 |S 22 | |S 21 | (dB) 12 -15 |S 11 | 10 -20 8 -25 6 0 10 20 30 40 50 60 70 80 90 100 -30 0 10 20 30 40 50 60 70 80 90 100 F requency (M Hz) F reque ncy (M Hz) P1dB and IP3 vs. Frequency 22 40 8 7 21 39 6 20 38 Noise Figure vs. Frequency P1dB (dBm) IP3 (dBm) 5 19 37 NF (dB) 4 3 2 18 P1dB 17 IP3 16 0 10 20 30 40 50 60 70 80 90 100 110 36 35 1 34 0 0 10 20 30 40 50 60 70 80 90 100 110 Frequency (M Hz) Frequency (MHz) 5-100 MHz Application Schematic Vs 5-100 MHz Evaluation Board Layout Rbias RBIAS 1µF Tant. 0.01µF 1000pF 68pF 1uF Tant. RF INPUT 10 µΗ 1 8 Amp 1 RF OUTPUT .01uF 1000pF 68pF Balun ETC1-1T 0.01uF 10uH 0.01uF Balun ETC1-1T Macom ETC1-1T 0.01 µF 2,3 6,7 0.01 µF 0.01 µF 4 Amp 2 5 0.01 µF Macom ETC1-1T 0.01uF 10uH 0.01uF 68pF 1000pF .01uF CGA-6618 SOIC-08 1µF Tant. 0.01µF 10 µΗ 1uF Tant. 1000pF 68pF ECB-101611 Rev A ESOP-8 Push-Pull Eval Board Rbias RBIAS Vs 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 7 http://www.sirenza.com EDS-101994 Rev J CGA-6618 Dual GaAs HBT Amplifier PCB Pad Layout Dimensions in inches [millimeters] Sized for 31 mil thick FR-4 Nominal Package Dimensions & Package Marking Dimensions in inches [millimeters] Refer to package drawing posted at www.sirenza.com for tolerances. TOP VIEW 8 7 6 5 BOTTOM VIEW Lot Code CGA6618 1 2 3 4 .155 [3.937] .236 [5.994] .112 [2.85] .088 [2.25] EXPOSED PAD .061 [1.549] .194 [4.93] .050 [1.27] .016 [.406] .061 [1.549] .008 [.203] .058 [1.473] .013 [.33] x 45° .008 DETAIL A PARTING LINE .194 [4.928] .003 [.076] SEATING PLANE SEE DETAIL A .155 [3.937] .025 5° SIDE VIEW END VIEW 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 8 http://www.sirenza.com EDS-101994 Rev J