SBF-5089

Product Description Sirenza Microdevices’ SBF-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. G ain & R etu rn L o ss V s F req u en cy + 25c 25 22 .5 20 17 .5 15 12 .5 10 7 .5 5 0 10 0 20 0 3 00 4 00 50 0 60 0 7 00 80 0 90 0 S2 1 S1 1 S2 2 SBF-5089 SBF-5089Z Pb RoHS Compliant & Green Package DC-500 MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Product Features • Available in Lead Free, RoHS compliant, & Green packaging • IP3 = 41dBm @ 240MHz • Stable Gain Over Temperature • Robust 1000V ESD, Class 1C • Operates From Single Supply • Low Thermal Resistance 0 -5 -10 -15 -20 -25 -30 -35 -40 IRL, ORL (dB) Gain(dB) Applications • Receiver IF Applications • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite Terminals U nits dB Frequency 70 MHz 240 MHz 500 MHz 70 MHz 240 MHz 400 MHz 70 MHz 240 MHz 400 MHz 500 MHz 500 MHz 500 MHz 4.5 82 Min. 18.5 18.0 Typ. 20.5 20.0 19.5 21 21 20.7 39.0 41.0 39.5 18 16 2.8 4.9 90 43 3.8 5.3 98 Max. 21.5 21.0 F re q u e n c y(M Hz ) Symbol G Parameter Small Si gnal Gai n P 1dB Output Power at 1dB C ompressi on dB m 19.2 OIP3 IRL ORL NF VD ID RTH, j-l Output Thi rd Order Intercept Poi nt Input Return Loss Output Return Loss Noi se Fi gure D evi ce Operati ng Voltage D evi ce Operati ng C urrent Thermal Resi stance (juncti on to lead) VS = 8 V RBIAS = 33 Ohms ID = 90 mA Typ. TL = 25ºC dB m dB dB dB V mA °C /W 37.5 14 12 Test Conditions: OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms, App circuit page 4 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2004 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-103413 Rev. C Preliminary SBF-5089 DC-500 MHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Frequency (MHz) Frequency (MHz) Symbol Parameter Unit 70 100 240 400 500 850 G OIP3 P 1dB IRL ORL S 12 NF Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure V= 8 V VSS =8 V R = 3 Ohms R BIAS =339Ohms BIAS L dB dB m dB m dB dB dB dB 20.5 39 21.0 19.4 17.2 25.2 2.7 S 20.4 39 21.0 19.9 15.8 22.4 2.8 L 20.1 41 21.0 20.1 18.6 22.3 2.7 19.8 39.5 20.7 20.9 24.0 22.3 2.8 19.5 39 20.8 22.0 37.5 22.3 2.8 18.2 34 18.6 26.8 15.5 22.4 2.8 Test Conditions: Test Conditions: I IDD==980 mATyp. 0 mA Typ. = 25ºC TTL= 25ºC OIP Tone Spacing MHz, Pout per tone 0 dBm OIP3 3 ToneSpacing ==11MHz, Pout per tone == 0 dBm ZZS =Z L= 50 Ohms using app circuit see page 4 = Z = 50 Ohms Absolute Maximum Ratings P1dB vs Temp 21.5 Output Power (dBm) 21 20.5 20 19.5 19 18.5 18 17.5 50 150 250 350 450 550 Frequency(MHz) 650 750 850 +25c -40c +85c Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Power Max Operating Dissipated Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) Absolute Limit 150 mA 6V +19 dBm 0.8 W +150°C -40°C to +85°C +150°C Max. Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: TL=TLEAD IDVD < (TJ - TL) / RTH, j-l TOIP vs Temp 43 41 39 37 35 33 31 29 27 25 50 150 250 350 450 550 650 750 850 +25c -40c +85c Noise Figure vs Temp 5 4.5 4 3.5 TOIP (dB) NF (dB) 3 2.5 2 1.5 1 0.5 0 50 150 250 350 450 550 650 750 850 +25c -40c +85c Frequency(MHz) Frequency(MHz) 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-103413 Rev. C Preliminary SBF-5089 DC-500 MHz Cascadable MMIC Amplifier Test Conditions : Vs = 8v, R-bias = 33ohm, Id = 90mA, Temp = +25c |S11| vs. Frequency -10 -12 -14 -16 +25c -40c +85c |S21| vs. Frequency 22 21.5 21 20.5 +25c -40c +85c S11 (dB) -20 -22 -24 -26 -28 -30 50 150 250 350 450 550 650 750 850 S21 (dB) -18 20 19.5 19 18.5 18 17.5 17 50 150 250 350 450 550 650 750 850 Frequency (MHz) Frequency (MHz) |S12| vs. Frequency -20 -20.5 -21 -21.5 +25c -40c +85c |S22| vs. Frequency -10 -12 -14 -16 +25c -40c +85c S12 (dB) S22 (dB) -22 -22.5 -23 -23.5 -24 -24.5 -25 50 150 250 350 450 550 650 750 850 -18 -20 -22 -24 -26 -28 -30 50 150 250 350 450 550 650 750 850 Frequency (MHz) Frequency (MHz) Bias Sweep vs. Temperature 100 +25c -40c +85c NOTE: Output Return Loss Can be improved at low end of band with L1 selection, see Page 4 app circuit. 80 Current(mA) 60 40 20 0 0 2 4 Source voltage 6 8 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-103413 Rev. C Preliminary SBF-5089 DC-500 MHz Cascadable MMIC Amplifier Basic Application Circuit R BIAS 1 uF 1000 pF Application Circuit Element Values R eference D esignator Frequency (Mhz ) 70 100 240 500 850 VS CD CB 1uF 1 uF 6.8uH 6.8nH 1000 pF 100 pF 1.2 uH 6.8nH 1000 pF 100 pF 1.2uH 6.8nH 220 pF 100 pF 68 nH 6.8nH 100pF 68 pF 33 nH 6.8nH LC RF out L1 CB CD LC L1 RF in CB 1 SBF-5089 3 2 4 Recommended Bias Resistor Values for ID=90mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 7.5 V 27 8V 33 10 V 55 12 V 77 Note: RBIAS provides DC bias stability over temperature. Rbias CD Mounting Instructions 1. NOTE: For broadband RF unconditional stability do not put GND vias under the exposed backside GND paddle. CB LC CB L1 2. Solder the copper pad on the backside of the device package to the ground plane. 3. Use a large ground pad area with many plated through-holes as shown. 4. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Pin # Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. Part Identification Marking 4 4 1 BF5 1 2 3 1 2 3 1 BF5Z 2 3 2 2, 4 GND Tin-Lead Lead Free Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. 3 3 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Part Number Ordering Information Part N umber SBF-5089 SBF-5089Z R eel Siz e 7" 7" D evices/R eel 1000 1000 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-103413 Rev. C Preliminary SBF-5089 DC-500 MHz Cascadable MMIC Amplifier PCB Pad Layout Dimensions in inches [millimeters] 0.3255 [8.27] NOTE: For broadband RF unconditional stability do not put vias under exposed gnd 0.0750 [1.91] (2X) 0.0640 [1.63] (2X) 0.0540 [1.37] (2X) 0.0250 [0.64] (2X) 0.0775 [1.97] 0.0750 [1.91] 0.2560 [6.50] INPUT/OUTPUT TRACE CENTERLINE 0.0899 [2.28] 0.0449 [1.14] 0.0506 [1.29] 0.0800 [2.03] 0.0270 [0.69] 0.0600 [1.52] 0.0450 [1.14] 0.0420 [1.07] Ø0.0200 [Ø0.51] GND Via 9X 0.0540 [1.37] DEVICE CENTERLINE See Application Note AN-075 For Package Outline Drawing 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-103413 Rev. C