SDM-09060-B1F

Product Description Sirenza Microdevices’ SDM-09060-B1F 65W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high power applications requiring high efficiency, excellent linearity, and unit-tounit repeatability. It is internally matched to 50 ohms. SDM-09060-B1F SDM-09060-B1FY 925-960 MHz Class AB 65W Power Amplifier Module Pb & Green Package RoHS Compliant Functional Block Diagram Vgs +3V DC to +6 V DC +28V DC 1 Vds1 180 o 0 o Gnd Balun RFin Balun Gnd RF out Gnd 0 +3V DC to +6 V DC o Gnd 180 o Vgs 2 +28V DC Vds 2 • • • • • • • • • • • Product Features Available in RoHS compliant packaging 50 W RF impedance 65W Output P1dB Single Supply Operation : Nominally 28V High Gain: 17 dB at 942 MHz High Efficiency : 44% at 942 MHz ESD Protection: JEDEC Class 2 (2000V HBM) Applications Base Station PA driver Repeater CDMA GSM / EDGE Units MHz W dB dB % % dB dBc nS Deg ºC/W Min. 925 60 16 32 Typ. 65 17 0.3 34 44 -15 -31 4.0 0.5 1.5 Max. 960 0.5 -12 -27 - Case Flange = Ground Key Specifications Symbol Frequency P1dB Gain Gain Flatness Efficiency Efficiency IRL IMD Delay Phase Linearity RTH Parameter Frequency of Operation Output Power at 1dB Compression, 943 MHz Gain at 60W PEP, 942MHz and 943MHz Peak-to-Peak Gain Variation, 60W PEP, 925 - 960MHz Drain Efficiency at 60W PEP, 942MHz and 943MHz Drain Efficiency at 60W CW, 942MHz Input Return Loss 60W PEP Output Power, 925 - 960MHz 3rd Order IMD Product, 60W PEP, 942MHz and 943MHz Signal Delay from Pin 3 to Pin 8 Deviation from Linear Phase (Peak-to-Peak) Thermal Resistance (Junction to Case) T Test Conditions Zin = Zout = 50Ω, VDD = 28.0V, IDQ1 = IDQ2 =300mA TFlange = 25ºC Quality Specifications Parameter ESD Rating MTTF Description Human Body Model 200oC Channel Unit Volts Hours Typical 2000 1.2 X 106 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-104211Rev D SDM-09060-B1F 925-960 MHz 65W Power Amp Module Pin Description Pin # 1 2,4,7,9 3 5 6 8 10 Flange Function VGS1 Ground RF Input VGS2 VD2 RF Output VD1 Ground Module Topside ground. Module RF input. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be taken to protect against video transients that may damage the active devices. LDMOS FET Q2 gate bias. VGSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4 LDMOS FET Q2 drain bias. See Note 1. Module RF output. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be taken to protect against video transients that may damage the active devices. LDMOS FET Q1 drain bias. See Note 1. Baseplate provides electrical ground and a thermal transfer path for the device. Proper mounting assures optimal performance and the highest reliability. See Sirenza applications note AN-054 Detailed Installation Instructions for Power Modules. Description LDMOS FET Q1 gate bias. VGSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4 Simplified Device Schematic 1 2 3 4 5 Case Flange = Ground Q2 10 Q1 9 8 7 6 Note 1: Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some applications may require energy storage on the VD leads to accommodate modulated signals. Note 2: Gate voltage must be applied to VGS leads simultaneously with or after application of drain voltage to prevent potentially destructive oscillations. Bias voltages should never be applied to a module unless it is properly terminated on both input and output. Note 3: The required VGS corresponding to a specific IDQ will vary from module to module and may differ between VGS1 and VGS2 on the same module by as much as ±0.10 volts due to the normal die-to-die variation in threshold voltage for LDMOS transistors. Unit V dBm Note 4: The threshold voltage (VGSTH) of LDMOS transistors varies with device temperature. External temperature compensation may be required. See Sirenza application notes AN-067 LDMOS Bias Temperature Compensation. Note 5: This module was designed to have it's leads hand soldered to an adjacent PCB. The maximum soldering iron tip temperature should not exceed 700° C, and the soldering iron tip should not be in direct contact with the lead for longer than 10 seconds. Refer to app note AN054 (www.sirenza.com) for further installation instructions. Absolute Maximum Ratings Parameters Drain Voltage (VDD) RF Input Power Load Impedance for Continuous Operation Without Damage Control (Gate) Voltage, VDD = 0 VDC Output Device Channel Temperature Operating Temperature Range Storage Temperature Range Value 35 +37 5:1 15 +200 -20 to +90 -40 to +100 VSWR V ºC ºC ºC Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation see typical setup values specified in the table on page one. Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. 303 S. Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-104211 Rev D SDM-09060-B1F 925-960 MHz 65W Power Amp Module Typical Performance Curves 2 Tone Gain, Efficiency, Linearity and IRL vs Frequency Vdd=28V, Idq=0.6A, Pout=60W PEP, Delta F=1 MHz 70 60 Gain (dB), Efficiency (%) 50 40 30 20 10 0 900 920 940 Frequency (MHz) 960 Gain IM3 IM7 Efficiency IM5 IRL 0 -10 Gain (dB), Efficiency (%) 45 40 35 2 Tone Gain, Efficiency, Linearity vs Pout Vdd=28V, Idq=0.6A, Freq=942 MHz, Delta F=1 MHz -25 -30 -35 -40 -45 -50 -55 -60 IMD (dBc) IMD(dBc), IRL (dB) -20 -30 -40 -50 -60 -70 980 30 25 20 15 10 5 0 0 20 40 60 80 Pout (W PEP) Gain IM3 IM7 Efficiency IM5 -65 -70 100 CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=0.6A, Pout=60W 50 0 20 19 C W Gain, Efficiency vs Pout Vdd=28V, Idq=0.6A, Freq=942 MHz 60 55 50 45 40 35 30 25 Efficiency (%) 40 Gain (dB), Efficiency (%) -5 Input Return Loss (dB) 18 17 16 Gain (dB) 15 14 13 12 11 30 Gain Efficiency IRL -10 20 -15 Gain Efficiency 20 15 10 5 10 -20 10 9 0 900 920 940 960 -25 980 8 0 20 40 Pout (W) 60 80 0 100 Frequency (MHz) 303 S. Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-104211 Rev D SDM-09060-B1F 925-960 MHz 65W Power Amp Module Typical Performance Curves (cont’d) 60 CW Gain, Efficiency, IRL vs Supply Voltage Pout=60W, Idq=0.6A, Freq=942 MHz Two Tone Gain, Efficiency, IRL, IMD vs Supply Voltage Pout=60W PEP, Idq=0.6A, Freq=942 MHz, Delta F=1 MHz 0 60 0 Gain (dB), Efficiency (%) Gain 40 Efficiency IRL -10 40 -20 30 20 -15 -20 30 -30 20 -40 10 -25 10 -50 0 18 20 22 24 26 28 30 32 Vds (Volts) -30 0 18 20 22 24 26 28 30 32 Vds (Volts) -60 20 CW Gain vs Pout for various Idq Vds=28V, Freq=942 MHz -25 -30 IM3 vs Pout for various Idq Vds=28V, Freq=942 MHz, Delta F=1 MHz 19.5 Idq=0.8A Idq=0.7A -35 Gain (dB) -40 -45 -50 -55 Idq=0.4A Idq=0.5A Idq=0.6A Idq=0.8A Idq= 0.7A Gain (dB) 19 Idq=0.6A Idq=0.5A Idq=0.4A 18.5 18 0 10 20 30 40 Pout (W) 50 60 70 80 -60 0 10 20 30 40 50 60 70 80 Pout (W PEP) Note: Evaluation test fixture information available on Sirenza Website, referred to as SDM-EVAL. 303 S. Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-104211 Rev D Input Return Loss (dB), IMD (dBc). 50 -5 50 Gain IRL IM5 Efficiency IM3 IM7 -10 Input Return Loss (dB) Gain (dB), Efficiency (%) SDM-09060-B1F 925-960 MHz 65W Power Amp Module Package Outline Drawing Note: Refer to Application note AN054, “Detailed Installation Instructions for Power Modules” for detailed mounting information. 303 S. Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-104211 Rev D