SGA-2386

Product Description The SGA-2386 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Gain & Return Loss vs. Freq. @TL=+25°C 24 GAIN Gain (dB) IRL 12 ORL 6 -30 -20 Return Loss (dB) 18 -10 0 SGA-2386 SGA-2386Z Pb RoHS Compliant & Green Package DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier Product Features • Now available in Lead Free, RoHS Compliant, & Green Packaging • High Gain : 15.3dB at 1950 MHz • Cascadable 50 Ohm • Operates From Single Supply • Low Thermal Resistance Package Applications • • • • PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite 0 0 1 2 3 Frequency (GHz) 4 5 -40 Symbol G Parameter Small Signal Gain Units dB Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz Min. 15.5 Typ. 17.2 15.3 14.5 8.5 7.5 20.5 19.5 2800 Max. 18.9 P1dB OIP3 Output Pow er at 1dB Compression Output Third Order Intercept Point dBm dBm MHz dB dB dB V mA °C/W Bandw idth Determined by Return Loss (>8dB) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noise Figure Device Voltage Device Operating Current Thermal Resistance (junction to lead) VS = 5 V RBIAS = 120 Ohms 1950 MHz 1950 MHz 1950 MHz 2.4 17 11.5 20.2 3.2 2.7 20 97 3.0 23 Test Conditions: ID = 20 mA Typ. TL = 25ºC OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-100627 Rev C SGA-2386 DC-5000 MHz Cascadable MMIC Amplifier Preliminary Typical RF Performance at Key Operating Frequencies Symbol Parameter Unit 100 Frequency Frequency (MHz) Frequency (MHz)(MHz) 500 850 1950 2400 G OIP3 P1dB IRL ORL S12 NF Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure VS = 5 V VS = 8 V RBIAS = 120 Ohms RBIAS = 39 Ohms dB dBm dBm dB dB dB dB 18.4 18.0 20.3 8.2 17.2 20.5 8.8 12.0 14.8 21.4 2.9 15.3 19.5 8.0 11.5 20.2 21.7 3.5 14.5 18.5 7.6 13.7 25.2 21.3 3.6 20.0 16.8 21.1 19.6 22.1 21.1 2.9 Test Conditions: = 20 mA Typ. IID = 80 mA Typ. D T = 25ºC TLL = 25ºC OIP Tone Spacing = 1 MHz, Pout per tone = -5 dBm OIP33 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = Z = 50 Ohms ZS = ZLL= 50 Ohms Absolute Maximum Ratings Noise Figure vs. Frequency VD= 2.7 V, ID= 20 mA 5 Noise Figure (dB) 4 3 2 1 0 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Power Absolute Limit 40 mA 5V +18 dBm +150°C -40°C to +85°C +150°C TL=+25ºC Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. TL=+25ºC Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency VD= 2.7 V, ID= 20 mA 30 25 OIP3 (dBm) 20 15 P1dB vs. Frequency VD= 2.7 V, ID= 20 mA 10 TL P1dB (dBm) 8 6 4 2 TL=+25ºC TL=+25ºC 10 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 0 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-100627 Rev C SGA-2386 DC-5000 MHz Cascadable MMIC Amplifier Preliminary Typical RF Performance Over Temperature ( Bias: VD= 2.7 V, ID= 20 mA (Typ.) ) 24 18 S21(dB) |S | vs. Frequency 21 0 -10 S11(dB) |S | vs. Frequency 11 12 6 -20 -30 TL 0 0 1 2 3 Frequency (GHz) 4 +25°C -40°C +85°C TL -40 5 0 1 2 3 Frequency (GHz) 4 +25°C -40°C +85°C 5 -10 -15 S12(dB) |S | vs. Frequency 12 0 -10 S22(dB) |S | vs. Frequency 22 -20 -25 -20 -30 TL -30 0 1 2 3 Frequency (GHz) 4 +25°C -40°C +85°C TL -40 5 0 1 2 3 Frequency (GHz) 4 +25°C -40°C +85°C 5 NOTE: Full S-parameter data available at www.sirenza.com 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-100627 Rev C SGA-2386 DC-5000 MHz Cascadable MMIC Amplifier Preliminary Basic Application Circuit R BIAS Application Circuit Element Values Frequency (Mhz) Reference Designator VS 1 uF 1000 pF CD LC 500 850 1950 2400 3500 CB CD 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH RF in CB 1 SGA-2386 3 2 CB 4 RF out LC Recommended Bias Resistor Values for ID=20mA RBIAS=( VS-VD ) / ID VS RBIAS Supply Voltage(VS) 5V 120 6V 160 8V 270 10 V 360 1 uF 1000 pF RBIAS Note: RBIAS provides DC bias stability over temperature. LC CD CB Mounting Instructions 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. A23 CB Part Identification Marking 3 3 Pin # 1 Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 4 A23 1 2 4 23Z 1 2 2,4 GND 3 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Ordering Information Part Number Reel Size Devices/Reel See Application Note AN-075 for Package Outline Drawing SGA-2386 SGA-2386Z 13" 13" 3000 3000 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-100627 Rev C