SGA-3563

Product Description The SGA-3563 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in high suppression of intermodulation products. Operation requires only a single positive voltage supply, 2 DC-blocking capacitors, a bias resistor and an RF choke. The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants. Gain & Return Loss vs. Frequency VD= 3.25 V, ID= 35 mA (Typ.) SGA-3563 SGA-3563Z Pb RoHS Compliant & Green Package DC-5000 MHz Silicon Germanium Cascadable HBT MMIC Amplifier Product Features • Available in Lead Free, RoHS Compliant • • • • • • green package ( Z Suffix ) 50 Ohm Cascadable Gain Block High Gain: 25.5 dB typ. at 850 MHz High Output IP3: 24.5 dBm typ. at 1950 MHz Low Noise Figure: 2.7 dB typ. at 1950 MHz Low Current Draw: 35mA typ. Single Voltage Supply Operation 32 GAIN 0 -10 IRL 24 Gain (dB) 16 ORL -20 -30 -40 0 1 2 3 Frequency (GHz) 4 5 Return Loss (dB) 8 0 Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite Min. 23.5 19.5 Typ. 25.5 21.5 20.0 13.0 12.5 24.0 24.5 5000 1950 1950 1950 3.0 31 11.2 11.2 15.5 20.0 2.7 3.25 35 255 TLEAD = 25ºC ZS = ZL = 50 Ohms Symbol G Parameter Small Signal Gain Freq. (MHz ) 850 1950 2400 850 1950 850 1950 Max. 27.5 23.5 Units dB P 1dB OIP3 Bandwidth Output Power at 1dB Compression Output Third Order Intercept Point (Tone Spacing = 1 MHz, Pout per tone = -5 dBm ) 11.0 22.5 dB m dB m MHz dB dB 3.7 3.5 39 dB V mA °C/W Determined by Return Loss (>10dB) Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead) Test Conditions: ID = 35 mA (Typ.) IRL ORL NF VD ID RTH, j-l The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 EDS-101496 Rev. D 1 Phone: (800) SMI-MMIC http://www.sirenza.com SGA-3563 DC-5.0 GHz Cascadeable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Symbol Parameter Units 100 500 Frequency (MHz ) 850 1950 2400 3500 G OIP3 P 1dB IRL ORL S 12 NF Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure dB dB m dB m dB dB dB dB TLEAD = 25ºC 28.5 24.0 13.0 29.7 31.8 29.4 2.3 27.5 23.6 13.0 17.6 31.1 29.3 2.3 25.5 24.0 13.0 15.6 33.6 28.6 2.3 21.5 24.5 12.5 15.5 20.0 25.5 2.7 20.0 24.0 12.0 17.2 17.9 23.9 17.0 22.0 10.0 14.7 15.0 21.3 Test Conditions: ID = 35 mA (Typ.) ZS = ZL = 50 Ohms Tone Spacing = 1 MHz Pout per tone = -5 dBm Absolute Maximum Ratings Noise Figure vs. Frequency ID= 35 mA (Typ.) 5 4 Parameter Max. Device Current (ID) Max. Device Voltage (VD) Absolute Limit 70 mA 6V +18 dBm +150°C -40°C to +85°C +150°C Noise Figure (dB) Max. RF Input Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) 3 2 1 Max. Storage Temp. TLEAD=+25ºC 0 0 0.5 1 1.5 2 2.5 3 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l Frequency (GHz) OIP3 vs. Frequency 30 P1dB vs. Frequency 15 ID= 35 mA (Typ.) ID= 35 mA (Typ.) OIP3 (dBm) 20 P1dB (dBm) 25 10 5 TLEAD=+25ºC 15 0 0.5 1 1.5 2 2.5 3 3.5 0 0 0.5 1 1.5 2 2.5 TLEAD=+25ºC 3 3.5 Frequency (GHz) Frequency (GHz) 303 South Technology Court Broomfield, CO 80021 EDS-101496 Rev. D 2 Phone: (800) SMI-MMIC http://www.sirenza.com SGA-3563 DC-5.0 GHz Cascadeable MMIC Amplifier Typical RF Performance Over Lead Temperature -- Bias: ID= 35 mA (Typ.) at TLEAD = +25ºC |S | vs. Frequency 21 |S | vs. Frequency 11 32 24 S21 (dB) 16 -40C 0 -10 S11 (dB) -20 -40C 8 0 0 25C +85C -30 -40 +25C +85C 1 2 3 Frequency (GHz) 4 5 6 0 1 2 3 Frequency (GHz) 4 5 6 |S | vs. Frequency 12 |S | vs. Frequency 0 -10 S22 (dB) -20 -40C 22 0 -10 S12 (dB) -20 -40C -30 -40 0 1 2 3 4 +25C +85C -30 -40 +25C +85C 5 6 0 1 2 3 Frequency (GHz) 4 5 6 Frequency (GHz) NOTE: Full S-parameter data available at www.sirenza.com 303 South Technology Court Broomfield, CO 80021 EDS-101496 Rev. D 3 Phone: (800) SMI-MMIC http://www.sirenza.com SGA-3563 DC-5.0 GHz Cascadeable MMIC Amplifier Basic Application Circuit Application Circuit Element Values RBIAS VS 1 uF 1000 pF ID Reference Designator CB Frequency (Mhz ) 100 1000 pF 100 pF 470 nH 500 850 1950 68 pF 22 pF 22 nH 2400 56 pF 22 pF 18 nH 3500 39 pF 15 pF 15 nH CD RLDC Bias Inductor 220 pF 100 pF 100 pF 68 nH 68 pF 33 nH CD LC LC 1,2 RF in CB 3 SGA-3563 Recommended Bias Resistance for ID = 35 mA 6 VD CB RF out Supply Voltage (VS ) (Volts) Bias Resistance* (Ohms)