SGA-9189Z

Product Description Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. SGA-9189 SGA-9189Z Pb RoHS Compliant & Green Package Medium Power Discrete SiGe Transistor Product Features Typical Gmax, OIP3, P1dB @ 5V,180mA 25 23 21 19 17 15 13 11 9 7 5 Gmax OIP3, P1dB (dBm) OIP3 P1dB 44 42 40 38 36 34 32 30 28 26 24 Gmax (dB) • • • • • • • • Available in RoHS compliant Green packaging 50-3000 MHz Operation 39 dBm Ouput IP3 Typical at 1.96 GHz 12.2 dB Gain Typical at 1.96 GHz 25.5 dBm P1dB Typical at 1.96 GHz 2.1 dB NF Typical at 0.9 GHz Cost Effective 3-5 V Operation Applications • • • • Wireless Infrastructure Driver Amplifiers CATV Amplifiers Wireless Data, WLL Amplifiers AN-021 contains detailed application circuits 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 Frequency (GHz) Symbol D evice C haracteristics, T = 25ºC VCE = 5V, ICQ =180mA (unless otherw ise noted) Maxi mum Avai lable Gai n ZS=ZS*, ZL=ZL* Power Gai n ZS=ZSOPT, ZL=ZLOPT Output 1dB C ompressi on Poi nt ZS=ZSOPT, ZL=ZLOPT Output Thi rd Order Intercept Poi nt ZS=ZSOPT, ZL=ZLOPT, POUT= +10 dBm per tone Noi se Fi gure ZS=ZSOPT, ZL=ZLOPT C ollector - Emi tter Breakdown Voltage D C current gai n Thermal Resi stance (juncti on-to-lead) Operati ng Voltage (collector-to-emi tter) Operati ng C urrent Test Frequency [1] 100% Tested [2] Sample Tested f = 900 MHz f = 1960 MHz f = 900 MHz [1] f = 1960 MHz [2] f = 900 MHz f = 1960 MHz [2] f = 900 MHz f = 1960 MHz [2] f = 900 MHz f = 1960 MHz U nits Min. Typ. 20.5 13.2 Max. GMAX G P 1dB OIP3 NF B V C EO hFE Rth V CE I dB dB dB m dB m dB V 7.5 100 ºC /W V mA 155 17.5 11.2 23.5 36.5 19.0 12.2 25.8 25.5 40.0 39.0 2.1 2.6 8.5 180 47 20.5 13.2 300 5.5 180 195 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101497 Rev H SGA-9189 Medium Power Discrete SiGe Transistor Maximum Recommended Operational Dissipated Power 1.20 Total Dissipated Power (W) Absolute Maximum Ratings Parameter Max Base Current (IB) Max Device Current (ICE) Max Collector-Emitter Voltage (VCEO) Max Collector-Base Voltage (VCBO) Max Emitter-Base Voltage (VEBO) Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. *Note: Load condition, ZL = 50 Ohms Absolute Limit 5 mA 200 mA 7V 20 V 4.8 V +150°C See Graph +150°C 1.00 0.80 0.60 0.40 0.20 0.00 -40 -10 20 50 80 110 140 Lead Temperature (C) Operational Limit (Tj