SGA-9289

Preliminary Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9289 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. SGA-9289 SGA-9289Z Pb RoHS Compliant & Green Package Medium Power Discrete SiGe Transistor Product Features • • • • • • • • Available in RoHS compliant Green packaging 50-3000 MHz Operation 42.5 dBm Ouput IP3 Typical at 1.96 GHz 12.0 dB Gain Typical at 1.96 GHz 27.5 dBm P1dB Typical at 1.96 GHz 2.4 dB NF Typical at 0.9 GHz Cost Effective 3-5 V Operation Typical Gmax, OIP3, P1dB @ 5V,270mA 25 23 21 19 44 OIP3 42 38 36 17 15 13 11 9 7 5 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 Gmax OIP3, P1dB (dBm) 40 Gmax (dB) 34 32 30 28 26 24 Applications • • • • Wireless Infrastructure Driver Amplifiers CATV Amplifiers Wireless Data, WLL Amplifiers AN-022 contains detailed application circuits P1dB Frequency (GHz) Symbol Test Frequency Device Characteristics, T = 25ºC [1] 100% Tested VCE = 5V, ICQ =280mA (unless otherw ise noted) [2] Sample Tested Maximum Available Gain ZS=ZS*, ZL=ZL* Power Gain ZS=ZSOPT, ZL=ZLOPT Output 1dB Compression Point ZS=ZSOPT, ZL=ZLOPT Output Third Order Intercept Point ZS=ZSOPT, ZL=ZLOPT, POUT= +13 dBm per tone Noise Figure ZS=ZSOPT, ZL=ZLOPT Collector - Emitter Breakdown Voltage DC current gain Thermal Resistance (junction-to-lead) Operating Voltage (collector-to-emitter) Operating Current f = 900 MHz f = 1960 MHz f = 900 MHz [1] f = 1960 MHz [2] f = 900 MHz f = 1960 MHz [2] f = 900 MHz f = 1960 MHz [2] f = 900 MHz f = 1960 MHz Units Min. Typ. 20.5 13.1 Max. GMAX G P 1dB OIP3 NF B V C EO hFE Rth V CE I dB dB dB m dB m dB V 7.5 100 ºC/W V mA 250 16.2 11.0 26.0 40.0 17.7 12.0 28.0 27.5 42.0 42.5 2.4 2.5 8.5 180 32 19.2 13.0 300 5.5 280 320 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101498 Rev G SGA-9289 Medium Power Discrete SiGe Transistor Maximum Recommended Operational Dissipated Power Absolute Limit 10 mA 400 mA Total Dissipated Power (W) Absolute Maximum Ratings Parameter Max Base Current (IB) Max Device Current (ICE) Max Collector-Emitter Voltage (VCEO) Max Collector-Base Voltage (VCBO) Max Emitter-Base Voltage (VEBO) Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. *Note: Load condition, ZL = 50 Ohms 2.4 2.0 1.6 1.2 0.8 0.4 0.0 -40 -10 20 50 80 110 140 Lead Tempe rature (C) Operational Limit (Tj