SGB-6533

Product Description Sirenza Microdevices’ SGB-6533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply the SGB-6533 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-6533 product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band. This product is available in a RoHS Compliant and Green package with matte tin finish, designated by the “Z” package suffix. SGB-6533 SGB-6533Z Pb RoHS Compliant & Green Package DC – 3 GHz Active Bias Gain Block Product Features • Functional Block Diagram Available in Lead Free, RoHS compliant, & Green Packaging High reliability SiGe HBT Technology Robust Class 1C ESD Simple and small size P1dB = 18.5 dBm @ 1950MHz IP3 = 32 dBm @ 1950MHz Low Thermal Resistance = 60 C/W NC NC Active Bias NC NC RFOUT • • • • • • • • • Vbias VCC NC NC RFIN NC Applications 5V applications LO buffer amp RF pre-driver and RF receive path NC Key Specifications Symbol fO S21 Parameters: Test Conditions Z0 = 50Ω, VCC = 5.0V, Ic = 88mA, T = 30ºC) Frequency of Operation Small Signal Gain – 850MHz Small Signal Gain – 1950MHz Small Signal Gain – 2400MHz Output Power at 1dB Compression – 850MHz P1dB Output Power at 1dB Compression – 1950MHz Output Power at 1dB Compression – 2400MHz Output IP3 – 850MHz OIP3 Output IP3 – 1950MHz Output IP3 – 2400MHz IRL ORL Ic NF Rth, j-l Input Return Loss @ 1950MHz Output Return Loss @1950MHz Current Noise Figure @1950MHz Thermal Resistance (junction - lead) dB dB mA dB ºC/W 11.0 10.0 76 dB 30.0 dBm 17.0 dB 17.0 Unit MHz Min. DC 25.0 18.5 17.0 19.0 18.5 18.0 32.0 32.0 32.0 15.0 14.0 88 3.7 60 98 4.7 20.0 Typ. Max. 3000 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2006 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 South Technology Court, Broomfield, CO 80021 GND NC NC NC Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-103099 Rev G SGB-6533 DC-3GHz Active Bias Gain Block Detailed Performance Table: Vcc=5V, Ic=88mA, T=25C, Z=50ohms Symbol G OIP3 P1dB IRL ORL S12 NF Parameter Small Signal Gain Output 3rd Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure Units dB dBm dBm dB dB dB dB 15.1 21.4 30.8 4.6 100MHz 28.4 500MHz 26.9 32.0 19.1 19.1 18.5 30.3 3.1 850MHz 25.0 32.0 19.0 26.4 15.3 29.7 3.1 1950MHz 18.5 32.0 18.5 15.0 14.0 26.2 3.7 2400MHz 17.0 32.0 18.0 13.5 11.9 25.4 4.2 8.7 13.6 22.9 4.9 3500MHz 13.1 Pin Out Description Pin # 1,2,4, 6, 7,8,11, 12,14 3 5 10 13 16 Backside Function NC RFIN GND RFOUT VBIAS VCC GND Description These are no connect pins. Leave them unconnected on the PC board. RF input pin. A DC voltage should not be connected externally to this pin An extra ground pin that is connected to the backside exposed paddle. Connection is optional. RF Output pin. Bias is applied to the Darlington stage thru this pin. This pin sources the current from the active bias circuit. Connect to pin 10 thru an inductor choke. This is Vcc for the active bias circuit. The backside exposed paddle is the main electrical GND and requires multiple vias in the PC board to GND. It is also the main thermal path. Simplified Device Schematic 16 15 14 13 Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. Absolute Maximum Ratings Parameters Value 150 6.5 0.75 -40 to +85 15 7 -40 to +150 +150 Unit mA V W ºC dBm dBm ºC ºC 1 2 Active Bias Current (Ic total) 12 11 10 Device Voltage (VD) Power Dissipation Operating Lead Temperature (TL) RF Input Power, Zload = 50 ohm RF Input Power, Zload > 10:1 VSWR Storage Temperature Range 3 4 9 Operating Junction Temperature (TJ) Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. 5 6 7 8 Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH’ j-l 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-103099 Rev G SGB-6533 DC-3GHz Active Bias Gain Block Evaluation Board Data (Vcc=VBIAS = 5.0V, Ic = 88mA) Bias Tee is substituted for DC feed inductor (L1) Gain vs. Frequency 30.0 28.0 26.0 34.0 OIP3 vs. Frequency 33.0 Gain (dB) 24.0 22.0 20.0 18.0 16.0 14.0 0.4 0.9 1.4 1.9 2.4 +25c +85c -40c OIP3 (dBm) 32.0 31.0 30.0 +25c 29.0 +85c -40c 28.0 0.4 0.9 1.4 1.9 2.4 Frequency (GHz) Frequency (GHz) P1dB vs. Frequency 19.5 19.0 7.0 6.0 Noise Figure vs. Frequency 18.0 17.5 17.0 16.5 16.0 0.4 0.9 1.4 1.9 2.4 Noise Figure (dB) 18.5 5.0 4.0 3.0 2.0 1.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 +25c +85c -40c P1dB (dBm) +25c +85c -40c Frequency (GHz) Frequency (GHz) Ic vs. Tem perature 0.160 0.120 0.115 0.110 0.105 Current vs. Voltage 0.140 0.120 0.100 Ic (mA) 0.100 0.095 0.090 0.085 0.080 0.075 0.070 + 85c + 25c -40c Ic (A) 0.080 0.060 0.040 0.020 0.000 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 Tem perature Vc (Volts) 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-103099 Rev G SGB-6533 DC-3GHz Active Bias Gain Block Evaluation Board Data (Vcc=VBIAS = 5.0V, Ic = 88mA) Bias Tee is substituted for DC feed inductor (L1) l S21 l vs. Frequency 35.0 30.0 25.0 l S11 l vs. Frequency 0.0 -5.0 -10.0 +25c S21 (dB) 20.0 15.0 10.0 S11 (dB) +85c -40c -15.0 -20.0 -25.0 -30.0 +25c +85c -40c 5.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -35.0 -40.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) Frequency (GHz) l S12 l vs. Frequency -15.0 0.0 -5.0 l S22 l vs. Frequency -20.0 -10.0 S12 (dB) -25.0 +25c -30.0 +85c -40c S22 (dB) -15.0 -20.0 -25.0 -30.0 -35.0 +25c +85c -40c -35.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -40.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) Frequency (GHz) 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-103099 Rev G SGB-6533 DC-3GHz Active Bias Gain Block Typical Evaluation Board Schematic for 5.0V Vcc C4 C3 16 VCC NC NC Vbias L1 NC NC RFOUT NC 1 NC NC RFIN RFIN RFOUT C2 C1 NC Optional GND NC NC NC Evaluation Board - Board material GETEK, 31mil thick, Dk=4.2, 1 oz. copper C4 Component Values By Band Designator C3 C4* C1, C2 500MHz 1000pF 1uF 220pF 68 nH 850MHz 1000pF 1uF 68pF 33nH 1950MHz 2400MHz 1000pF 1uF 43pF 22nH 1000pF 1uF 22pF 18nH C3 1 L1 L1 C2 * C4 is optional depending on application and filtering. Not required for SGB device operation. Note: The amplifier can be run from a 8V supply by simply inserting a 33 ohm resistor in series with Vcc. C1 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-103099 Rev G SGB-6533 DC-3GHz Active Bias Gain Block Part Marking The part will be symbolized with an “SGB-6533” for Sn/Pb plating or “SGB-65Z” for RoHS green compliant product. Marking designator will be on the top surface of the package. Part Number Ordering Information Part Number SGB-6533 SGB-6533Z Reel Size 13” 13” Devices/Reel 3000 3000 Package Outline Drawing (Dimensions in mm) Recommended Land Pattern (dimensions in mm[in].): Recommended PCB Soldermask (SMOBC) for Land Pattern(dimensions in mm[in]): 1.58 [0.062] 0.50 [0.020] 0.26 [0.010] 0.38 [0.015] 0.29 [0.011] 1.58 [0.062] 0.21 [0.008] 0.50 [0.020] 0.25 [0.010] 0.53 [0.021] 3.17 [0.125] 1.20 [0.047] 0.75 [0.030] 0.005 CHAMFER (8PL) Ø0.38 [Ø0.015] Plated Thru (4PL) 0.46 [0.018] 1.20 [0.047] 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-103099 Rev G