SGC-2363Z

SGC-2363Z Product Description Sirenza Microdevices’ SGC-2363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC-2363Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC-2363Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50 ohms. 50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block Pb RoHS Compliant & Green Package Gain & Return Loss 30 20 S21 VD = 3V, ID = 26mA Gain, RL (dB) 10 0 -10 -20 -30 0 0.5 1 1.5 2 2.5 3 3.5 4 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C Product Features • Single, Fixed 3V Supply • No Dropping Resistor Required • Patented Self-Bias Circuitry • P1dB = 10.1 dBm at 1950 MHz • OIP3 = 23 dBm at 1950 MHz • Robust 1000V ESD, Class 1C HBM Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS, WCDMA • IF Amplifier • Wireless Data, Satellite S22 S11 Frequency (GHz) Symbol G Parameters Small Signal Gain Units dB Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 2400 MHz 1950 MHz 1950 MHz 1930 MHz Min. 15.5 11.6 Typ. 17.0 13.1 12.3 10.4 10.1 9.6 23.0 23.0 24.0 15.0 14.5 3.7 3 Max. 18.5 14.6 P1dB Output Power at 1dB Compression dBm 9.1 OIP3 IRL ORL NF VD ID Rth, j-l Output Third Order Intercept Point Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead) VD = 3.0V Bias Tee Data ID = 26mA TL = 25°C ZS = ZL = 50 Ohms dBm dB dB dB V mA °C/W 21 12.0 10.5 4.8 22 OIP3 Tone Spacing = 1MHz 26 255 30 Test Conditions: Pout per tone = -5 dBm The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2007 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-104973 Rev C SGC-2363Z 0.05-4.0 GHz Cascadeable MMIC Amplifier Typical RF Performance at Key Operating Frequencies (Bias Tee) Symbol G OIP3 P1dB IRL ORL S12 NF Parameter Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure VD = 3V TL = 25°C ID = 26mA Typ. ZS = ZL = 50 Ohms Unit dB dBm dBm dB dB dB dB 100 18.4 23.0 12.1 23.5 22.5 20.5 2.9 500 18.1 23.5 11.0 19.0 18.5 21.5 3.0 Frequency (MHz) 850 17.0 23.0 10.4 18.0 16.5 22.0 3.3 1950 13.1 23.0 10.1 15.0 14.5 20.5 3.7 2400 12.3 24.0 9.6 16.5 13.0 20.0 3.9 3500 9.8 22.0 8.3 14.0 12.5 19.0 4.7 Test Conditions: OIP3 Tone Spacing = 1MHz, Pout per tone = -5 dBm Typical Performance with Bias Tee, VD = 3V, ID = 26mA OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing) 28 15 P1dB vs. Frequency 26 13 P1dB (dBm) OIP3 (dBm) 24 11 22 25C 20 -40C 85C 18 0 0.5 1 1.5 2 2.5 3 3.5 9 25C 7 -40C 85C 5 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) Frequency (GHz) Absolute Maximum Ratings Parameter Max Device Current (ICE) Max Device Voltage (VCE) Max. RF Input Power* (See Note) Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. *Note: Load condition, ZL = 50 Ohms Absolute Limit 55 mA 4.5 V +18 dBm +150°C -40°C to +85°C +150°C Reliability & Qualification Information Parameter ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level Rating Class 1C MSL 1 This product qualification report can be downloaded at www.sirenza.com Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: TL=TLEAD IDVD < (TJ - TL) / RTH, j-l 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-104973 Rev C SGC-2363Z 0.05-4.0 GHz Cascadeable MMIC Amplifier Typical Performance with Bias Tee, VD= 3V, ID= 26mA 6.0 NF vs. Frequency 40 35 Current vs. Voltage +25C -40C 5.0 30 +85C NF (dB) 4.0 25 Id (mA) 25C 85C 0 0.5 1 1.5 2 2.5 3 3.5 20 15 10 5 3.0 2.0 1.0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) Vd (V) |S11| over Frequency 0 -5 -10 25C -40C 85C |S21| over Frequency 20 16 Gain (dB) S11 (dB) 12 8 4 0 25C -40C 85C -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) Frequency (GHz) |S12| over Frequency 0 -5 25C -40C 0 -5 -10 |S22| over Frequency 25C -40C 85C S12 (dB) -10 -15 -20 -25 -30 0 0.5 S22 (dB) 1.5 2 2.5 3 3.5 4 85C -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 3 3.5 4 1 Frequency (GHz) Frequency (GHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-104973 Rev C SGC-2363Z 0.05-4.0 GHz Cascadeable MMIC Amplifier Basic Application Circuit Vd Application Circuit Element Values Reference Designator 100-2000MHz 2000-4000MHz 1uF 1000pF C3 L1 C1 C2 C3 1000pF 100pF 100pF 150nH 2.7pF 6.8pF 6.8pF 39nH 1,2 RF IN C1 3 SGC-2363Z L1 6 C2 RF OUT 4,5 1uF 1000pF C3 L1 C1 C2 Part Identification Marking & Pinout 6 5 4 C23 1 2 3 Pin # Function Description Part / Evaluation Board Ordering Information Part Number Description Reel Size Devices / Reel 3 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation Connection to ground. Use via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum RF performance SGC-2363Z SGC-2363Z-EVB1 SGC-2363Z-EVB2 Lead Free, RoHs Compliant 100-2000 MHz Evaluation Board 2000-4000 MHz Evaluation Board 7" N/A N/A 3000 N/A N/A 1,2,4,5 GND 6 RF output and bias pin. This pin requires the use of an RF OUT / external DC blocking capacitor chosen for the frequency of DC BIAS operation. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-104973 Rev C SGC-2363Z 0.05-4.0 GHz Cascadeable MMIC Amplifier SOT-363 PCB Pad Layout Dimensions in inches [millimeters] RF OUT RF IN Notes: 1. Provide a large ground pad area under device pins 1, 2, 4, and 5 with several plated-through holes placed as shown. 2. 1-2 ounce finished copper thickness is recommended. 3. RF I/O lines are 50Ω SOT-363 Nominal Package Dimensions Dimensions in inches [millimeters] A link to the SOT-363 package outline drawing with full dimensions and tolerances may be found on the product web page at www.sirenza.com. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-104973 Rev C