SGC-4363Z

Preliminary Information Product Description Sirenza Microdevices’ SGC-4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC-4363Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC-4363Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50 ohms. The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants. Gain & Return Loss 20 S21 S22 SGC-4363Z Pb RoHS Compliant & Green Package 50-4000 MHz Silicon Germanium Cascadable Gain Block VD = 3V, ID = 52mA (Typ.) 0 10 S11 -20 Return Loss (dB) 15 -10 Gain (dB) Product Features • Single Fixed 3V Supply • Supply Dropping Resistor not required • Patented Self-Bias Circuitry • P1dB = 12.4 dBm at 1950 MHz • IP3 = 26.6 dBm at 1950 MHz • Robust 1000V ESD, Class 1C HBM Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 2400 MHz 1950 MHz 1950 MHz 1930 MHz Min. Typ. 16.7 13.0 11.8 13.3 12.4 11.8 28.8 26.6 25.5 15.5 12.9 4.0 3 48 OIP3 Tone Spacing = 1MHz Pout per tone = -5 dBm 5 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C 0 0 1 2 3 4 -30 -40 Frequency (GHz) Symbol G Parameters Small Signal Gain Units dB Max. P1dB Output Power at 1dB Compression dBm OIP3 IRL ORL NF VD ID Rth, j-l Output Third Order Intercept Point Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead) VD = 3.0V Bias Tee Data ID = 52mA Typ. TL = 25°C dBm dB dB dB V mA °C/W ZS = ZL = 50 Ohms 52 180 56 Test Conditions: The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-104977 Rev A Preliminary Information SGC-4363Z 0.05-4.0 GHz Cascadeable MMIC Amplifier Typical RF Performance at Key Operating Frequencies (Bias Tee) Symbol G OIP3 P1dB IRL ORL S12 NF Parameter Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure VD = 3V TL = 25°C ID = 52mA Typ. ZS = ZL = 50 Ohms Unit dB dBm dBm dB dB dB dB 26.5 25.1 20.1 2.9 100 18.0 500 17.7 30.6 14.0 21.7 21.2 21.2 3.1 Frequency (MHz) 850 16.7 28.8 13.3 18.7 17.3 21.6 3.5 1950 13.0 26.6 12.4 15.5 12.9 20.0 4.0 2400 11.8 25.5 11.8 14.1 11.8 19.5 4.2 3500 9.4 22.6 10.0 12.1 11.1 18.8 5.1 Test Conditions: OIP3 Tone Spacing = 1MHz, Pout per tone = -5 dBm Typical Performance with Bias Tee, VD = 3V, ID = 52mA (Typ.) OIP3 vs. Frequency (25C) 32 17 P1dB vs. Frequency (25C) 30 15 OIP3 (dBm) P1dB (dBm) 28 13 26 11 24 9 22 500 1000 1500 2000 2500 3000 3500 7 500 1000 1500 2000 2500 3000 3500 Frequency (MHz) Frequency (MHz) Absolute Maximum Ratings Parameter Max Device Current (ICE) Max Device Voltage (VCE) Max. RF Input Power* (See Note) Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. *Note: Load condition, ZL = 50 Ohms Absolute Limit 110 mA 4.5 V +18 dBm +150°C -40°C to +85°C +150°C Reliability & Qualification Information Parameter ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level www.sirenza.com Rating Class 1C MSL 1 This product qualification report can be downloaded at Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=TLEAD 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-104977 Rev A Preliminary Information SGC-4363Z 0.05-4.0 GHz Cascadeable MMIC Amplifier Typical Performance with Bias Tee, VD = 3V, ID = 52mA (Typ.) Noise Figure vs. Frequency (25C) 6 70 80 DCIV vs. Temperature +25C -40C 5 60 50 +85C Id (mA) 4 NF (dB) 40 30 20 3 2 10 1 0 500 1000 1500 2000 2500 3000 3500 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) Vd (V) |S11| vs. Frquency 0 -5 -10 |S21| vs. Frequency 20 16 12 S11 (dB) -15 -20 -25 -30 0 1 2 3 4 S11_25C Gain (dB) 8 S21_25C 4 0 0 1 2 3 4 Frequency (GHz) Frequency (GHz) |S22| vs. Frequency |S12| vs. Frquency 0 -5 S12_25C 0 -5 -10 S12 (dB) -10 -15 -20 -25 -30 0 1 2 3 4 S22 (dB) -15 -20 S22_25C -25 -30 0 1 2 3 4 Frequency (GHz) Frequency (GHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-104977 Rev A Preliminary Information SGC-4363Z 0.05-4.0 GHz Cascadeable MMIC Amplifier Basic Application Circuit Application Circuit Schematic Vs Application Circuit Element Values Reference Designator 100-2000MHz 2000-4000MHz 1uF 1000pF C3 L1 C1 C2 C3 L1 1000pF 100pF 100pF 120nH 2.7pF 6.8pF 6.8pF 39nH 1,2 RF IN C1 3 SGC-4363Z 6 C2 RF OUT Mounting Instructions 1. Use a large ground pad area under device pins 1, 2, 4 and 5 with many plated through-holes as shown. 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. 4,5 1uF 1000pF C3 L1 C1 C2 Part Identification Marking & Pinout 6 5 4 C43 1 2 3 Pin # Function Description 3 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation Connection to ground. Use via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum RF performance Part Number SGC-4363Z Package / Lead Composition Lead Free, RoHs Compliant Reel Size 7" Devices / Reel 3000 1,2,4,5 GND 6 RF output and bias pin. This pin requires the use of an RF OUT / external DC blocking capacitor chosen for the frequency of DCBIAS operation. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-104977 Rev A Preliminary Information SGC-4363Z 0.05-4.0 GHz Cascadeable MMIC Amplifier SOT-363 PCB Pad Layout Dimensions in inches [millimeters] RF OUT RF IN Notes: 1. Provide a large ground pad area under device pins 1, 2, 4, & 5 with many plated via holes as shown. 2. Dimensions given for 50 Ohm RF I/O lines are for 31 mil thick Getek. Scale accordingly for different board thicknesses and dielectric contants. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick Getek with 1 ounce copper on both sides. SOT-363 Nominal Package Dimensions Dimensions in inches [millimeters] A link to the SOT-363 package outline drawing with full dimensions and tolerances may be found on the product web page at www.sirenza.com. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-104977 Rev A