SGL-0263

Product Description The SGL-0263 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5V. The SGL-0263 has been characterized at Vd = 3V for low power and 4V for medium power applications. Only 2 DC-blocking capacitors, 2 input matching components, a bias resistor, and an optional RF choke are required for operation from 1400-2500 MHz. The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants. SGL-0263 SGL-0263Z Pb RoHS Compliant & Green Package 1400 - 2500 MHz Silicon Germanium Cascadable Low Noise Amplifier Product Features • Available in Lead Free, RoHS Compliant • • • • • green package ( Z Suffix ) High Input / Output Intercept Low Noise Figure: 1.3dB typ. at 1900 MHz Low Power Consumption Single Voltage Supply Operation Internal Temperature Compensation VS Temperature Compensation Circuit RF Out / VS RF In Applications • Receivers, GPS, RFID • Cellular, Fixed Wireless, Land Mobile Symbol Parameter Freq. (MHz ) 1900 2100 2400 1900 2100 2400 1900 2100 2400 1900 2100 2400 1900 1900 1900 Min. (VS=3V) Typ. (VS=3V) Max. (VS=3V) Typ. (VS=4V) Units 12.1 G Small Signal Gain 13.4 12.5 10.8 5.5 6.8 7.9 9.5 13.5 15.5 1.3 1.5 2.0 14.7 13.8 12.9 11.3 11.4 12.3 12.8 15.1 16.8 18.4 dB 3.5 P 1dB Output Power at 1dB Compression Input Third Order Intercept Point dB m 7.5 IIP3 Tone Spacing = 1 MHz Pout per tone = -13dBm dB m 1.7 NF IRL ORL |S12| ID RTH,j-l Noise Figure, ZS = 50 Ohms Input Return Loss Output Return Loss Reverse Isolation Device Current Thermal Resistance (junction to lead) 1.9 2.1 2.8 21.9 17.4 21.0 dB dB dB dB mA o 10.0 10.0 13.3 12.9 20.7 9.0 12.5 255 15 23 C/W Test Conditions: 1400-2500 MHz Application Circuit TLEAD = 25ºC Z0 = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 EDS-101502 Rev C 1 Phone: (800) SMI-MMIC http://www.sirenza.com SGL-0263(Z) 1400-2500 MHz SiGe Low Noise Amplifier Typical RF Performance Over Lead Temperature at 3 V and 4 V -- 1400-2500 MHz Evaluation Board Input IP3 vs. Frequency Over Temperature 20 18 16 16 14 12 10 P1dB vs. Frequency Over Temperature Input IP3 (dBm) 14 12 10 T=-40°C, VS=3 V P1dB (dBm) 8 6 T=-40°C, VS=3 V 8 6 4 1400 T=+25°C, VS=3 V T=+85°C, VS=3 V T=-40°C, VS=4 V T=+25°C, VS=4 V T=+85°C, VS=4 V 4 2 0 1400 T=+25°C, VS=3 V T=+85°C, VS=3 V T=-40°C, VS=4 V T=+25°C, VS=4 V T=+85°C, VS=4 V 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 Freq. (MHz) Freq. (MHz) Noise Figure vs. Frequency at TLEAD=+25C 3.5 Output IP3 vs. Frequency Over Temperature 34 32 3.0 30 Output IP3 (dBm) 2.5 28 NF (dB) 2.0 26 24 T=-40°C, VS=3 V 1.5 22 1.0 Vs=3 V Vs=4 V 0.5 1400 T=+25°C, VS=3 V T=+85°C, VS=3 V T=-40°C, VS=4 V 20 18 1400 T=+25°C, VS=4 V T=+85°C, VS=4 V 1600 1800 2000 2200 2400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 Freq. (MHz) Freq. (MHz) Device Voltage (Vd) vs. Device Current (Id) for T = -40C, +25C, & +85C Load lines for Vs =+5 Volts, Rs=43 W and 180 W 5.0 Absolute Maximum Ratings Parameter Max. Device Current (ID) Max. Device Voltage (VS) Max. RF Input Power Max. Junction Temp. (TJ) Absolute Limit 45 mA 5V +10 dBm +150°C -40°C to +85°C +150°C Vs= +5 V, Rs = 43 W 4.5 4.0 3.5 Vd (Volts) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 6 8 10 12 14 16 Id (mA) 18 20 22 24 26 T=-40C T=+25C T=+85C Vs = +5 V, Rs = 180 W Operating Temp. Range (TLEAD) Max. Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TLEAD) / RTH, j-l 303 South Technology Court Broomfield, CO 80021 EDS-101502 Rev C 2 Phone: (800) SMI-MMIC http://www.sirenza.com SGL-0263(Z) 1400-2500 MHz SiGe Low Noise Amplifier Typical RF Performance at VS = 3 V -- 1400-2500 MHz Evaluation Board -- TLEAD=+25°C 20 16 12 8 4 0 1300 |S21| vs. Frequency 0 -5 -1 0 |S11| vs. Frequency S21 (dB) S11 (dB) -1 5 -2 0 -2 5 -3 0 1300 1500 1700 1900 2100 2300 2500 1500 1700 1900 2100 2300 2500 F re q u e n c y (M H z) -1 0 -1 4 -1 8 -2 2 -2 6 -2 5 F re q u e n c y (M H z) |S12| vs. Frequency |S22| vs. Frequency 0 -5 -1 0 S12 (dB) S22 (dB) 1500 1700 1900 2100 2300 2500 -1 5 -2 0 -3 0 1300 -3 0 1300 1500 1700 1900 2100 2300 2500 F re q u e n c y (M H z) F re q u e n c y (M H z) Typical RF Performance at VS = 4 V -- 1400-2500 MHz Evaluation Board -- TLEAD=+25°C |S21| vs. Frequency 20 16 12 8 4 0 1300 0 -5 -1 0 |S11| vs. Frequency S21 (dB) S11 (dB) -1 5 -2 0 -2 5 -3 0 1300 1500 1700 1900 2100 2300 2500 1500 1700 1900 2100 2300 2500 F re q u e n c y (M H z) F re q u e n c y (M H z) |S12| vs. Frequency -1 0 -1 4 -1 8 -2 2 -2 6 -3 0 1300 0 -5 -1 0 |S22| vs. Frequency S12 (dB) S22 (dB) -1 5 -2 0 -2 5 -3 0 1300 1500 1700 1900 2100 2300 2500 1500 1700 1900 2100 2300 2500 F re q u e n c y (M H z) F re q u e n c y (M H z) NOTE: Full S-parameter data available at www.sirenza.com 303 South Technology Court Broomfield, CO 80021 EDS-101502 Rev C 3 Phone: (800) SMI-MMIC http://www.sirenza.com SGL-0263(Z) 1400-2500 MHz SiGe Low Noise Amplifier 1400-2500 MHz Application Circuit +VS Delay Elements Ref. D es. Z1 Z2 Z3 Phase shift @ Z0 (Ohms) 2GHz (deg.) 50 50 50 11 13 6 Application Circuit Element Values Reference Designator CD2 RB2 CD1 Value 27 nH 1.2 nH Manufacturer & Part No. TOKO LL1608-FS27NJ TOKO LL1608-FS1R2NJ LB LM1 B1 1 RB1 (OPT) B1 (OPT) 1500 Ohms FAIR-RITE 2508051527y0 @100 MHz Ferrite Bead 0.1 uF 22 pF 1.0 pF 47 Ohms 0 Ohms SAMSUNG CL10B103KBNC ROHM MCH185AA220DJK ROHM MCH185A1R0CK PHILLIPS 9C06031A47R0 JL HFT PHILLIPS 9C06031A0R00 JL HFT 4 CB Z1 RF INPUT CM1 LM1 Z2 3 SGL-0263 6 5 Z3 LB CB RF OUTPUT C B, C D 1 C D2 CM1 RB1 1 1400-2500 MHz Evaluation Circuit Board SIRENZA MICRODEVICES ECB-101761 Rev B RF IN RB2 2 Notes: 1. B1 and RB1 provide improved K-factor but are optional. 2. RB2 may be introduced as a voltage dropping resistor for use with supply voltages greater than the desired device bias voltage. Device Pin Out Guide CB CM1 LM1 SGL-0263 CB LB RB1 RF OUT Pin # 1 Function N/C Description No electrical connection. Provide an isolated (ungrounded) solder pad for mounting integrity. RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Voltage supply connection. Bypass with suitable capacitors. Connection to ground. Provide via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum RF performance. RF output and voltage supply. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation. 3 CD1 CD2 RF IN B1 4 DC BIAS RB2 2, 5 Ground Note: Circuit board dielectric material is GETEK,ML200C +VS GND 6 RF OUT/ BIAS Part Identification Marking & Pin Out Reliability & Qualification Information Parameter ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level Rating Class 1A MSL 1 654 654 L1 123 Tin-Lead L1Z 123 Lead Free RoHs Compliant The product qualification report may be dow nloaded at w w w.sirenza.com Part Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number SGL-0263 SGL-0263Z P ackag e / L ead Composition Tin-Lead Lead Free, RoHs Compliant R eel Siz e 7" 7" Devices / R eel 3000 3000 303 South Technology Court Broomfield, CO 80021 EDS-101502 Rev C 4 Phone: (800) SMI-MMIC http://www.sirenza.com SGL-0263(Z) 1400-2500 MHz SiGe Low Noise Amplifier SOT-363 PCB Pad Layout Dimensions in inches [millimeters] Pad Layout 0.026 0.075 Notes: 1. Provide a ground pad area under device pins 2 & 5 with plated via holes to the PCB ground plane. 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick Getek with 1 ounce copper on both sides. 0.035 0.016 SOT-363 Nominal Package Dimensions Dimensions in inches [millimeters] A link to the SOT-363 package outline drawing with full dimensions and tolerances may be found on the product web page at www.sirenza.com. 303 South Technology Court Broomfield, CO 80021 EDS-101502 Rev C 5 Phone: (800) SMI-MMIC http://www.sirenza.com