SGL-0363Z

Preliminary SGL-0363Z Product Description Sirenza Microdevices’ SGL-0363Z is a low power, low noise amplifier. It is designed for 2.7 to 3.3V battery operation. The matching networks are implemented externally which allows for optimum narrow-band performance with 20dB typical gain and 1.1dB noise figure from 200-900MHz. This RFIC uses the latest Silicon Germanium HBT process. The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants. Pb RoHS Compliant & Green Package 5-2000 MHz Low Noise Amplifier Silicon Germanium Simplified Device Schematic Vpc RF Out Gnd Active Bias Network Narrow-band Matching Network Product Features • Lead Free, RoHS Compliant & Green Package • Low Power Consumption, 5.7mA @ 3.3V • External Input Noise Match • High Gain and Low Noise, • • • • • 20dB and 1.1dB respectively @ 900MHz Operates from 2.7 to 3.3V Power Shutdown Capability using VPC 500V ESD, Class 1B Small Package: SOT-363 High input overdrive capability, +18dBm RF In Narrow-band Matching Network Applications • Low Power LNA for ISM, Gnd Symbol Parameters Units Cellular and Mobile Communications Frequency Min. Typ. Max. S21 Small Signal Gain dB P1dB Output Power at 1dB Compression dBm IIP3 Input Third Order Intercept Point dBm NF Noise Figure dBm IRL Input Return Loss dBm ORL Output Return Loss dBm S12 ID RTH, j-l Test Conditions: Reverse Isolation Device Operating Current Thermal Resistance (junction - lead) VS = 3.3V TL = 25°C ID = 5.7mA Typ. ZS = ZL = 50 Ohms dBm mA °C/W 200 MHz 450 MHz 900 MHz 200 MHz 450 MHz 900 MHz 200 MHz 450 MHz 900 MHz 200 MHz 450 MHz 900 MHz 200 MHz 450 MHz 900 MHz 200 MHz 450 MHz 900 MHz 200 MHz 450 MHz 900 MHz 17 4.8 21 20 20 1.1 2.2 2.5 -3.8 -2.4 -7.1 1.0 1.1 1.1 14 12 15 20 19 12 24 25 27 5.7 173 23 6.6 IIP3 Tone Spacing = 1MHz, Pout per tone = -15 dBm Different Application Circuit per Band The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-104341 Rev D Preliminary SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier Absolute Maximum Ratings Parameter Max Device Current (ID) Max Device Voltage (VD) Max. RF Input Power* (See Note) Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. *Note: Load condition 1, ZL = 50 Ohms Load condition 2, ZL = 10:1 VSWR Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=TLEAD Absolute Limit 20mA 5.5 V +18 dBm 8 7 6 5 DCIV over Temperature 25C -40C 85C Id (mA) +150°C -40°C to +85°C +150°C 4 3 2 1 0 0 1 Vd (V) 2 3 4 Insertion Gain & Isolation 30 Reliability & Qualification Information Parameter ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level Rating Class 1B MSL 1 -5 -10 Max Gain Isolation -15 Gain -20 -25 -30 -35 0 0.5 1 1.5 2 2.5 3 3.5 4 25 20 15 10 5 0 This product qualification report can be downloaded at www.sirenza.com Caution: ESD Sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Typical Performance - De-embedded S-parameters Frequency (GHz) Note: S-parameters are de-embedded to the device leads with ZS=ZL=50Ω. The device was mounted on eval. board 125390-B and grounded like 900MHz application circuit. De-embedded S-parameters can be downloaded from our website (www.sirenza.com) S11 Vs. Frequency S22 Vs. Frequency 4 GHz 3 GHz .2 GHz .2 GHz 2 GHz .45 GHz .9 GHz .45 GHz .9 GHz 2 GHz 4 GHz 3 GHz 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-104341 Rev D Isolation (dB) Gain (dB) Preliminary SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier 200 MHz Application Circuit Data, VS= 3.3V, ID= 5.7mA Note: Tuned for NF Noise Figure vs. Frequency 2 1.8 1.6 1.4 Gain vs. Frequency 24 85C Gain (dB) 22 NF (dB) 1.2 1 0.8 0.6 0.4 170 20 18 S21_25C S21_-40C S21_85C 25C 16 170 180 190 200 210 220 230 180 190 200 210 220 230 Frequency (MHz) Frequency (MHz) OIP3 vs. Freq. (-15dBm Output Tones) 20 19 0 -5 -10 -15 Input/Output Return Loss, Isolation vs. Frequency, T=25C OIP3 (dBm) S11 S12 S22 18 17 16 15 14 13 25C -40C 85C dB -20 -25 -30 170 12 11 170 180 190 200 210 220 230 180 190 200 210 220 230 Frequency (MHz) IM3 vs. Tone Power @200MHz -30 Frequency (MHz) 6 5 25C -40C 85C P1dB vs. Frequency -40 4 P1dB (dBm) IM3 (dBc) -50 3 2 1 0 -1 -2 170 -60 25C -40C 85C -70 -80 -19 -17 -15 -13 -11 -9 -7 -5 180 190 200 210 220 230 Pout per tone (dBm) Frequency (MHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-104341 Rev D Preliminary SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier 450 MHz Application Circuit Data, VS= 3.3V, ID= 5.7mA Note: Tuned for NF Noise Figure vs. Frequency 2 1.8 1.6 24 Gain vs. Frequency S21_25C S21_-40C 85C 22 S21_85C Gain (dB) 1.4 NF (dB) 1.2 1 0.8 0.6 0.4 420 20 25C 18 430 440 450 460 470 480 16 420 430 440 450 460 470 480 Frequency (MHz) Frequency (MHz) 20 19 S11 S12 S22 0 -5 -10 Input/Output Return Loss, Isolation vs. Frequency, T=25C OIP3 vs. Freq. (-15dBm Output Tones) 18 OIP3 (dBm) 17 16 15 14 13 12 25C -40C 85C dB -15 -20 -25 -30 420 430 440 450 460 470 480 11 420 430 440 450 460 470 480 Frequency (MHz) IM3 vs. Tone Power @450MHz -30 6 5 Frequency (MHz) P1dB vs. Frequency -40 4 P1dB (dBm) IM3 (dBc) -50 3 2 1 0 -1 -2 420 25C -40C 85C -60 25C -40C 85C -70 -80 -19 -17 -15 -13 -11 -9 -7 -5 430 440 450 460 470 480 Pout per tone (dBm) Frequency (MHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-104341 Rev D Preliminary SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier 900 MHz Application Circuit Data, VS= 3.3V, ID= 5.7mA Note: Tuned for NF Noise Figure vs. Frequency 2 1.8 1.6 24 Gain vs. Frequency 85C 22 NF (dB) Gain (dB) 1.4 1.2 1 0.8 0.6 0.4 870 20 S21_25C 25C 18 S21_-40C S21_85C 880 890 900 910 920 930 16 870 880 890 900 910 920 930 Frequency (MHz) Frequency (MHz) OIP3 vs. Freq. (-15dBm Output Tones) 20 19 Input/Output Return Loss, Isolation vs. Frequency, T=25C 0 -5 -10 S11 S12 S22 18 25C -40C 85C OIP3 (dBm) 880 890 900 910 920 930 17 16 15 14 13 dB -15 -20 -25 12 -30 870 11 870 880 890 900 910 920 930 Frequency (MHz) IM3 vs. Tone Power @900MHz -30 6 5 Frequency (MHz) P1dB vs. Frequency -40 4 P1dB (dBm) IM3 (dBc) -50 3 2 25C -60 25C -40C 85C 1 0 -1 -2 870 -40C 85C -70 -80 -19 -17 -15 -13 -11 -9 -7 -5 880 890 900 910 920 930 Pout per tone (dBm) Frequency (MHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-104341 Rev D Preliminary SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier Application Schematic for 200 MHz Note: Electrical lengths are determined from the center of a shunt component and a cut on the center trace 56Ω 5.1Ω Ζ=50Ω, 0.8° Ζ=50Ω, 7.5° Ζ=50Ω, 0.6° Ζ=50Ω, 1.1° 2ΚΩ Ζ=50Ω, 3.8° Evaluation Board Layout for 200 MHz Bill of Materials C1 C2 C3 C4 C5 1.0uF Tantalum capacitor 1200pF 0603 ceramic capacitor 12pF 0603 ceramic capacitor 1200pF 0603 ceramic capacitor .01uF 0603 ceramic capacitor L1 LL1608-FS56NJ Toko 56nH L2 LL1608-FS12NJ Toko 12nH R1 2KΩ 0603 res (5%) R2 56Ω 0603 res (5%) R3 5.1Ω 0603 res (5%) Connectors 2x PSF-S01-1mm GigaLane Co. Heat sink EEF-102059 PCB 125390-B 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-104341 Rev D Preliminary SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier Application Schematic for 450 MHz Note: Electrical lengths are determined from the center of a shunt component and a cut on the center trace 56Ω 6.8Ω Ζ=50Ω, 1.8° Ζ=50Ω, 2.5° Ζ=50Ω, 2.5° Ζ=50Ω, 3.3° 2.2ΚΩ Ζ=50Ω, 8.5° Evaluation Board Layout for 450 MHz Bill of Materials C1 C2 C3 C4 C5 C6 L1 R1 R2 R3 1.0uF Tantalum capacitor 1200pF ceramic 0603 capacitor 5.6pF ceramic 0603 capacitor 1200pF ceramic 0603 capacitor 1200pF ceramic 0603 capacitor 0.5pF ceramic 0603 capacitor LL1608-FS27NJ Toko 27nH 2.2KΩ 0603 res (5%) 56Ω 0603 res (5%) 6.8Ω 0603 res (5%) Connectors 2x PSF-S01-1mm GigaLane Co. Heat sink EEF-102059 PCB 125390-B 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 7 http://www.sirenza.com EDS-104341 Rev D Preliminary SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier Application Schematic for 900 MHz Note: Electrical lengths are determined from the center of a shunt component and a cut on the center trace 56Ω 12Ω Ζ=50Ω, 3.6° Ζ=50Ω, 4.5° Ζ=50Ω, 3.5° Ζ=50Ω, 5.1° Evaluation Board Layout for 900 MHz Bill of Materials C1 C2 C3 C4 C5 L1 L2 R1 R2 1.0uF Tantalum capacitor 1200pF ceramic 0603 capacitor 2.2pF ceramic 0603 capacitor 100pF ceramic 0603 capacitor 47pF ceramic 0603 capacitor LL1608-FS10NJ Toko 10nH LL1608-FS18NJ Toko 18nH 12Ω 0603 res (5%) 56Ω 0603 res (5%) Connectors 2x PSF-S01-1mm GigaLane Co. Heat sink EEF-102059 PCB 125390-B 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 8 http://www.sirenza.com EDS-104341 Rev D Preliminary SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier Pin # 1 Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor and matching components as shown in the application schematics. Connect to ground per application circuit drawing. Series feedback used to improve IRL Gnd for active bias tied internally to pin 2 & 5 Part Number Ordering Information Part Number SGL-0363Z Reel Size 7" Devices / Reel 3000 2, 5 3 4 6 GND Gnd RF OUT/ RF output and bias pin. Bias should be supplied to this pin VD through an external RF choke. (See application circuits) VPC VPC is the bias control pin for the active bias network. Suggested Pad Layouts Part Identification 654 L03Z 123 900MHz Layout 200MHz & 400MHz Layout Nominal Package Dimensions Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 9 http://www.sirenza.com EDS-104341 Rev D