SGL-0622Z

SGL-0622Z Product Description The SGL-0622Z is a low noise, high gain MMIC LNA designed for low power single-supply operation from 2.7-3.6V. Its Class-1C ESD protection and high input overdrive capability ensures rugged performance, while its integrated active bias circuit maintains robust stable bias over temperature and process beta variation. The SGL-0622Z is internally matched from 5-4000 MHz and requires only 4-5 external biasing components (DC blocks, bypass caps, inductive choke). The SGL-0622Z is fabricated using highly repeatable Silicon Germanium technology and is housed in a cost-effective RoHS/ WEEE compliant QFN 2x2 miniature package. 5 - 4000 MHz Low Noise MMIC Amplifier Silicon Germanium Pb RoHS Compliant & Green Package Typical Performance 40 35 30 25 4 Gain 3.5 3 Gain (dB) 20 15 10 5 0 100 2 1.5 1 NF 600 1100 1600 2100 2600 3100 0.5 0 NF (dB) 2.5 Product Features • High Gain = 28dB @ 1575MHz • Low Noise Figure = 1.5dB @ 1575MHz • Low Power Consumption, 10.5mA @ 3.3V • Battery Operation: 2.7-3.6V (Active Biased) • Fully Integrated Matching • Class-1C ESD Protection (>1000V HBM) • High input overdrive capability, +18dBm • RoHS/WEEE Compliant Miniature 2x2 QFN Package Applications • High Gain GPS Receivers • ISM & WiMAX LNAs Frequency Min. Typ. Max. Frequency (MHz) Symbol Parameters Units S21 Small Signal Gain dB 1.575 GHz 2.44 GHz 3.5 GHz 1.575 GHz 2.44 GHz 3.5 GHz 1.575 GHz 2.44 GHz 3.5 GHz 1.575 GHz 2.44 GHz 3.5 GHz 1.575 GHz 2.44 GHz 3.5 GHz 1.575 GHz 2.44 GHz 3.5 GHz 0.05 - 4 GHz 25 14.5 28 23 16.5 1.5 2 2.8 31 18.5 1.9 NF Noise Figure dB 3.3 P1dB O utput Power at 1dB Compression dBm 5.3 1.5 -1.4 -13 -12 -8.5 14.3 12.0 10.0 -16 IIP3 Input Third Order Intercept Point dBm 12 IRL Input Return Loss dB 6 9.5 14.0 22.0 -28 10.5 150 ORL S12 ID R TH, j-l Test Conditions: Output Return Loss Reverse Isolation O perating Current Thermal Resistance (junction - lead) V CC = 3.3V TL = 25°C ID = 10.5mA Typ. ZS = ZL = 50 Ohms dB dB mA °C/W 7.5 12.5 IIP3 Tone Spacing = 1MHz, Pout per tone = -15 dBm The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2007 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-104519 Rev E SGL-0622Z 5-4000 MHz SiGe Low Noise Amplifier Typical RF Performance at Key Operating Frequencies (With Application Circuit) Frequency (MHz) 450 850 34.4 32.8 Symbol S21 IIP3 P1dB S11 S22 S12 NF Parameter Small Signal Gain Input Third Order Intercept Point Output at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure VCC = 3.3V TL = 25°C Unit dB dBm dBm dB dB dB dB 100 34.6 200 34.9 1575 28.5 -13.0 5.3 14.3 9.5 35.6 1.50 1950 26.1 2440 23.0 -12.0 1.5 12.0 14.0 32.0 2.01 3500 17.0 -8.5 -1.4 10.0 22.0 29.0 2.81 15.1 9.2 38.8 1.25 20.0 12.2 39.8 0.96 12.6 11.8 38.7 0.84 16.0 10.4 39.9 1.16 12.8 12.1 34.8 1.78 Test Conditions: ID = 10.5 mA Typ. ZS = ZL = 50 Ohms IIP3 Tone Spacing = 1MHz, Pout per tone = -15 dBm Absolute Maximum Ratings Reliability & Qualification Information Parameter ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level Rating Class 1C MSL 1 Parameter Max Device Current (ID) Max Device Voltage (VD) Max. RF Input Power* (See Note) Max. Junction Temp. (TJ) Absolute Limit 20mA 4V +18 dBm +150°C -40°C to +85°C +150°C This product qualification report can be downloaded at www.sirenza.com Noise Figure vs. Frequency 4 3.5 3 2.5 25C 85C Operating Temp. Range (TL) Max. Storage Temp. *Note: Load condition 1, ZL = 50 Ohms Load condition 2, ZL = 10:1 VSWR 2 1.5 1 0.5 0 1.5 2 2.5 3 3.5 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: TL=TLEAD IDVD < (TJ - TL) / RTH, j-l dB Caution: ESD sensitive Frequency (GHz) Appropriate precautions in handling, packaging and testing devices must be observed. -6 -8 -10 IIP3 v s. Frequency 10 8 6 P1dB vs. Frequency 25C -40C 85C P1dB (dBm) 3.5 IIP3 (dBm) -12 -14 -16 -18 -20 1.5 2 2.5 3 25C -40C 85C 4 2 0 -2 -4 1.5 2 2.5 3 3.5 Frequency (GHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 Frequency (GHz) http://www.sirenza.com EDS-104519 Rev E SGL-0622Z 5-4000 MHz SiGe Low Noise Amplifier Application Circuit Data, VCC= 3.3V, ID= 9mA IM3 vs. Frequency -35 -40 25C -45 -40C 85C 20 18 16 14 12 25C -40C 85C DCIV over Temperature IM3 (dBc) -50 -55 -60 -65 -70 1.5 Id (mA) 2 2.5 3 3.5 10 8 6 4 2 0 0 1 2 3 4 Frequency (GHz) Vd (V) S11 vs. Frequency 0 -5 -10 S21 vs. Frequency 40 35 30 25 dB 20 15 10 5 0 4 S21_25C S21_-40C S21_85C dB -15 -20 -25 -30 0 1 2 Frequency (GHz) 3 S11_25C S11_-40C S11_85C 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) S22 vs. Frequency 0 S22_25C S22_-40C S22_85C S12 vs. Frequency 0 -10 -20 dB -30 -40 -50 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 3.5 4 S12_25C S12_-40C S12_85C -5 -10 dB -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 Frequency (GHz) 3 3.5 4 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-104519 Rev E SGL-0622Z 5-4000 MHz SiGe Low Noise Amplifier Application Schematic Vs 1uF 1200 pF 100pF 2 4 RF in 100pF Epad SGL-0622Z 68nH 1 RF out 100pF Evaluation Board Layout Bill of Materials C1 C2 C3 C4 C5 1x TAJB105KLRH Rohm 1.0uF 1x MCH185C122KK Rohm 1200pF 1x MCH185A101JK Rohm 100pF 1x MCH185A101JK Rohm 100pF 1x MCH185A101JK Rohm 100pF L1 1x LL1608-FS56NJ Toko 68nH Connectors 2x PSF-S01-1mm GigaLane Co. Heat sink EEF-102059 PCB QFN2x2 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 + http://www.sirenza.com EDS-104519 Rev E SGL-0622Z 5-4000 MHz SiGe Low Noise Amplifier Pin # 1 2 3,5,6,7,8 4 Function RF OUT/VD GND N/A RF IN Description RF output and bias pin. Bias should be supplied to this pin through an external RF choke. (See application circuit) Connect to ground per application circuit drawing. Not Used RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the application schematics. Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Vias should be located under the EPAD as shown in the recommended land pattern. EPAD GND Suggested Pad Layout Part Number Ordering Information Part Number SGL-0622Z Reel Size 7" Devices / Reel 3000 Part Identification Nominal Package Dimensions Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances. Package Type: 2 x 2 QFN 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-104519 Rev E