SHF-0186

Product Description Sirenza Microdevices’ SHF-0186 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost surfacemount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-0186 is +28 dBm when biased for Class AB operation at 8V,100mA. The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems Typical Gain Performance (8V,100mA) SHF-0186 0.05-12 GHz, 0.5 Watt GaAs HFET Pending Obsolescence Last Time Buy Date: March 15, 2004 40 Gain, Gmax (dB) 30 20 10 Gain Gmax Product Features • +28 dBm Output Power at 1dB Compression • +40 dBm Output IP3 • High Drain Efficiency • 18 dB Gain at 900 MHz (Application circuit) • 15 dB Gain at 1960 MHz (Application circuit) • See App Note AN-020 for circuit details Applications • Analog and Digital Wireless Systems • 3G, Cellular, PCS • Fixed Wireless, Pager Systems Test Frequency [1] = 100% Tested [2] = Sample Tested U nits Min. Typ. Max. 0 -10 0 2 Frequency (GHz) 4 6 8 10 12 Symbol D evice C haracteristics, T = 25°C VDS=8V, IDQ=100mA (unless otherw ise noted) Gmax Maxi mum Avai lable Gai n ZS=ZS*, ZL=ZL* Inserti on Gai n ZS=ZL= 50 Ohms Power Gai n ZS=ZSOPT , ZL=ZLOPT Output Thi rd Order Intercept Poi nt ZS=ZSOPT , ZL=ZLOPT , POUT= +15 dBm per tone Output 1dB C ompressi on Poi nt ZS=ZSOPT, ZL=ZLOPT Saturated D rai n C urrent VDS= VDSP, VGS= 0V Tranconductance VDS= VDSP, VGS= -0.25V Pi nch-Off Voltage VDS= 2V, IDS= 0.6mA Gate-to-Source Breakdown Voltage IGS= 1.2mA, drai n open Gate-to-D rai n Breakdown Voltage IGD= 1.2mA, VGS= -5V Thermal Resi stance (juncti on-to-lead) Operati ng Voltage (drai n-to-source) Operati ng C urrent (drai n-to-source, qui escent) Recommended Operati ng Juncti on T mperature e f = 900 MHz f = 1960 MHz f = 12000 MHz [1] f = 900 MHz f = 1900 MHz [1] f = 900 MHz f = 1960 MHz [2] f = 900 MHz f = 1960 MHz [2] f = 900 MHz f = 1960 MHz [2] dB 4.0 14.0 204 144 -3.0 - 23.4 20.1 5.0 18.0 15.0 17.9 14.5 41 40 28 28 294 198 -1.9 -17 -22 66 - 16.0 384 252 -1.0 -15 -17 9.0 200 150 S 21 G OIP3 P 1dB IDSS gm VP BVGS BVGD Rth V DS IDS TJ dB dB m dB m dB m mA mS [1] [1] [1] o V V V C /W V mA C The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101574 Rev C 1 Preliminary Pending Obsolescence SHF-0186 0.5 Watt HFET Absolute Maximum Ratings Operation of this device beyond any one of these parameters may cause permanent damage. MTTF is inversely proportional to the device junction temperature. For junction temperature and MTTF considerations the device operating conditions should also satisfy the following experssions: PDC - POUT < (TJ - TL) / RTH where: PDC = IDS * VDS (W) POUT = RF Output Power (W) TJ = Junction Temperature (°C) TL = Lead Temperature (pin 2,4) (°C) RTH = Thermal Resistance (°C/W) Parameter Drain Current Forward Gate Current Reverse Gate Current Drain-to-Source Voltage Gate-to-Source Voltage RF Input Power Operating Temperature Storage Temperature Range Power Dissipation Channel Temperature Symbol IDS IGSF IGSR V DS VGS PIN TOP Tstor PDISS TJ Value 294 1.2 1.2 +12 0 200 -40 to +85 -40 to +175 3.5 +175 Unit mA mA mA V V mW °C °C W °C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page 1. Typical Performance - Engineering Application Circuits (See App Note AN-020) Freq (MH z ) 900 1960 2140 2450 VDS (V) 8 8 8 8 IDQ (mA) 100 100 100 100 P1dB OIP3* (dB m) (dB m) 28.1 28.8 28.7 28.6 40.5 40 38.5 39.5 Gain (dB ) 18.4 14.7 14.4 13.9 S11 (dB ) -16 -16 -12 -15 S 22 (dB ) -9 -5 -7 -5 NF (dB ) 3.1 2.5 3.0 2.9 ZSOPT (Ω ) 73 + j51.5 24.9 + j32.0 21.4 + j24.7 15.0 + j21.6 ZLOPT (Ω ) 50.3 + j2.6 36.4 - j2.5 34.9 + j2.3 44.8 - j5.5 * POUT= +15dBm per tone, 1MHz tone spacing Data above represents typical performance of the application circuits noted in Application Note AN-020. Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at www.sirenza.com or call your local sales representative. D G Z LOPT ZSOPT S 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101574 Rev C 2 Preliminary Pending Obsolescence SHF-0186 0.5 Watt HFET De-embedded S-Parameters (ZS=ZL=50 Ohms, VDS=8V, IDS=100mA, 25° C) 40 Gain & Isolation Isolation Gmax Gain 0 -10 -20 -30 -40 -50 25 20 Gain vs Temperature Gain, Gmax (dB) 30 20 10 0 -10 0 2 Isolation (dB) Gain (dB) 15 10 5 0 -5 -10 0 2 4 T = -40, 25, 85°C Frequency (GHz) S11 vs Frequency 1.0 0.5 4 6 8 10 12 Frequency (GHz) S22 vs Frequency 1.0 6 8 10 6 GHz 2.0 0.5 2.0 10 GHz 0.2 5.0 0.2 10 GHz 13 GHz 5.0 13 GHz 3 GHz 0.0 0.2 0.5 1.0 2.0 5.0 inf 0.0 0.2 6 GHz 0.5 1.0 2.0 5.0 inf 3 GHz 2 GHz 0.2 1 GHz 5.0 2 GHz 5.0 0.2 0.5 1 GHz 2.0 0.5 2.0 1.0 1.0 Note: S-parameters are de-embedded to the device leads with Z S=Z L=50 Ω. The data represents typical performace of the device. De-embedded s-parameters can be downloaded from our website (www.sirenza.com). 0.35 0.3 0.25 DC-IV Curves IDS (A) 0.2 0.15 0.1 0.05 0 0 1 2 3 4 5 6 7 8 VGS = -2.0 to 0V, 0.2V steps T=25° C VDS (V) 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101574 Rev C 3 Preliminary Pending Obsolescence SHF-0186 0.5 Watt HFET Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Ordering Information Part Number SHF-0186 Reel Siz e 7" Devices/Reel 1000 Pin # 1 2 3 4 Function Gate Source Drain Source RF Input Description Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. RF Output Same as Pin 2 Part Symbolization The part will be symbolized with the “H1” designator and a dot signifying pin 1 on the top surface of the package. Package Dimensions H1 PCB Pad Layout H1 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101574 Rev C 4