SNA-186

Product Description Sirenza Microdevices’ SNA-186 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface-mountable plastic package. At 1950 MHz, this amplifier provides 12dB of gain and +13dBm of P1dB power when biased at 50mA. The use of an external resistor allows for bias flexibility and stability. These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. Also available in chip form (SNA-100), its small size (0.33mm x 0.33mm) and gold metallization makes it an ideal choice for use in hybrid circuits. SNA-186 DC-8 GHz, Cascadable GaAs HBT MMIC Amplifier Output Power vs. Frequency 15 14 Product Features • Patented, Reliable GaAs HBT Technology • Cascadable 50 Ohm Gain Block • 12dB Gain, +13dBm P1dB • 1.5:1 Input and Output VSWR • Operates From a Single DC Supply • Low Cost Surface Mount Plastic Package Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite Units dB dB dB dB GHz dBm dBm dB dBm 13 12 11 10 0.1 0.5 1 1.5 2 4 6 8 GHz Sy mbol GP GF BW3dB P1dB Parameter Small Signal Pow er Gain Gain Flatness 3dB Bandw idth Output Pow er at 1dB Compression Frequency 850 M Hz 1950 M Hz 2400 M Hz 0.1-8 GHz Min. 11.5 Ty p. 12.5 12.0 11.8 +/- 0.5 10.0 Max. 13.8 1950 M Hz 1950 M Hz 1950 M Hz 0.1-10 GHz 0.1-10 GHz 3.3 13.0 26.0 OIP3 NF VSWR ISOL VD Output Third Order Intercept Point Noise Figure Input / Output Reverse Isolation 6.0 1.5:1 16 dB V Device Operating Voltage Device Operating Current Device Gain Temperature Coefficient 3.8 50 -0.0015 4.3 ID dG/dT mA dB/°C °C/W 45 55 RTH, j-l Thermal Resistance (junction to lead) 350 Test Conditions: VS = 8 V RBIAS = 82 Ohms ID = 50 mA Typ. TL = 25ºC OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101697 Rev A Preliminary SNA-186 DC-10 GHz Cascadable MMIC Amplifier Typical Performance at 25° C (Vds = 3.8V, Ids = 50mA) |S11| vs. Frequency 0 -5 -10 -15 -20 -25 0.1 0.5 1 1.5 2 4 6 8 |S21| vs. Frequency 13 12 dB dB 11 10 9 0.1 0.5 1 1.5 2 4 6 8 GHz GHz |S12| vs. Frequency 0 -5 |S22| vs. Frequency 0 -5 dB -10 -15 -20 0.1 0.5 1 1.5 2 4 6 8 dB -10 -15 -20 0.1 0.5 1 1.5 2 4 6 8 GHz GHz Noise Figure vs. Frequency 8 28 27 TOIP vs. Frequency 7 dB 6 dBm 26 25 24 5 0.1 0.5 1 1.5 2 4 6 8 0.1 0.5 1 1.5 2 4 6 8 GHz GHz Absolute Maximum Ratings Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Pow er Max. Junction Temp. (TJ) Operating Temp. Range (TL) Absolute Limit 70 mA 6V +10 dBm +150°C -40°C to +85°C +150°C Max. Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101697 Rev A Preliminary SNA-186 DC-10 GHz Cascadable MMIC Amplifier Application Circuit Element Values Typical Application Circuit R BIAS 1 uF 1000 pF Reference Designator Frequency (Mhz) 500 850 1950 2400 3500 CB 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH CD LC CD LC RF in CB 1 4 SNA-186 Recommended Bias Resistor Values for ID=50mA 3 CB RF out Supply Voltage(VS) RBIAS 6V 43 8V 82 10 V 120 12 V 160 2 Note: RBIAS provides DC bias stability over temperature. VS RBIAS 1 uF 1000 pF Mounting Instructions 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. LC S1 CD CB CB 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Pin # Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead inductance. Part Identification Marking The part will be marked with an “S1” designator on the top surface of the package. 3 1 2, 4 GND 4 S1 1 2 3 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Part Number Ordering Information Caution: ESD sensitive Part Number SNA-186-TR1 SNA-186-TR2 SNA-186-TR3 Reel Size 7" 13" 13" Devices/Reel 1000 3000 5000 Appropriate precautions in handling, packaging and testing devices must be observed. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101697 Rev A Preliminary SNA-186 DC-10 GHz Cascadable MMIC Amplifier Dimensions in inches [millimeters] PCB Pad Layout Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances. Nominal Package Dimensions 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101697 Rev A