SNA-300

Product Description Sirenza Microdevices’ SNA-300 is a GaAs monolithic broadband amplifier (MMIC) in die form. At 1950 MHz, this amplifier provides 22dB of gain when biased at 35mA . These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. Its small size (0.350mm x 0.345mm) and gold metallization make it an ideal choice for use in hybrid circuits. The SNA-300 is 100% DC tested and sample tested for RF performance. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias flexibility and stability. The SNA-300 is supplied in gel paks at 100 devices per pak. Also available in packaged form (SNA-376 & SNA-386) Output Power vs. Frequency 12 11 SNA-300 DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Product Features • Cascadable 50 Ohm Gain Block • 22dB Gain, +10dBm P1dB • 1.5:1 Input and Output VSWR • Operates From Single Supply • Through wafer via for ground Applications • Broadband Driver Amplifier • IF Amplifier or gain stage for VSAT, LMDS, WLAN, and Cellular Systems dBm 10 9 8 0.1 0.5 1 1.5 GHz 2 4 6 8 10 Symbol Parame te r Units Fre que ncy M in. T yp. M ax . dB dB dB GHz dB m dB m dB dB dB V mA dB /°C °C/W 1950 M Hz 1950 M Hz 1950 M Hz 1950 0.1-3.0 GHz 3.3 30.0 8.0 20.0 850 M Hz 1950 M Hz 2400 M Hz 23.0 22.0 21.5 3.0 10.0 23.0 4.0 11.7 20.0 3.7 35.0 -0.003 260.0 Gp S m all S ignal P ower Gain [2] 20.5 20.0 23.5 23.0 B W 3dB 3dB B andwidth P 1dB OIP 3 NF RL IS OL VD Output P ower at 1dB Com press ion [2] Output Third Order Interc ept P oint [2] Nois e Figure Input / Output Return Los s Reverse Isolation Device Operating V oltage [1] 4.1 40.0 ID Device Operating Current [1] dG/dT Device Gain Tem perature Coefficient R TH , j-b Therm al Res istanc e (junction to bac ks ide) Test Conditions: VS = 8 V RBIAS = 120 Ohms ID = 35 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 TL = 25ºC, ZS = ZL = 50 Ohms, [1] 100% DC tested, [2] Sample tested The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-102432 Rev B Preliminary SNA-300 DC-3 GHz Cascadable MMIC Amplifier Typical Performance at 25° C (Vds =3.7V, Ids = 35mA) (data includes bond wires) |S11| vs. Frequency 0 24 -10 22 |S21| vs. Frequency dB -20 dB 20 -30 18 -40 0.1 0.5 1 1.5 2 2.5 3 3.5 4 16 0.1 0.5 1 1.5 2 2.5 3 3.5 4 GHz GHz |S12| vs. Frequency 0 -5 -10 -10 0 |S22| vs. Frequency dB -15 -20 dB -20 -30 -25 -30 0.1 0.5 1 1.5 2 2.5 3 3.5 4 -40 0.1 0.5 1 1.5 2 2.5 3 3.5 4 GHz GHz Noise Figure vs. Frequency 5 4.5 24 26 TOIP vs. Frequency dB 4 3.5 3 0.1 0.5 1.0 1.5 2.0 2.5 3.0 dBm 22 20 0.5 1 1.5 2 2.5 3 3.5 4 GHz GHz Absolute Maximum Ratings Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Pow er Max. Junction Temp. (TJ) Operating Temp. Range (TL) Absolute Limit 75 mA 6V +20 dBm +200°C -40°C to +85°C +150°C Max. Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-102432 Rev B Preliminary SNA-300 DC-3 GHz Cascadable MMIC Amplifier Typical Application Circuit R BIAS 1 uF 1000 pF Application Circuit Element Values Reference Designator Frequency (Mhz) 500 850 1950 2400 3500 CB 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH CD LC CD LC RF in CB 1 4 SNA-300 3 CB RF out Recommended Bias Resistor Values for ID=35mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 5V 36 6V 68 8V 120 10 V 180 2 Note: RBIAS provides DC bias stability over temperature. GND VIA Die Thickness - 0.004 [0.1] Dimensions - inches [mm] RFIN RFOUT (above configuration used for S-parameter data) Suggested Bonding Arrangement Simplified Schematic of MMIC For recommended handling, die attach, and bonding methods, see the following application note at www.sirenza.com. AN-041 (PDF) Handling of Unpackaged Die Caution: ESD sensitive Part Number Ordering Information Part N umber SNA-300 Gel Pack 1 0 0 p cs. p e r p a ck Appropriate precautions in handling, packaging and testing devices must be observed. 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-102432 Rev B