SPA-1318

Product Description Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. SPA-1318 2150 MHz 1 Watt Power Amplifier with Active Bias Product Features • High Linearity Performance: +20.1 dBm W-CDMA Channel Power at -50 dBc ACP +47 dBm Typ. OIP3 VCC VBIAS RFIN N/C RFOUT/ VCC Input Match Reduction Symbol f0 P 1dB AC P S 21 VSWR OIP3 NF Icc Parameters: Test Conditions: Z0 = 50 Ohms, Temp = 25ºC, Vcc = 5.0V Frequency of Operation R EC O M M EN D ED FO R Units MHz dB m dB c dB dB m dB mA V ºC/W • Patented High Reliability GaAsHBT Technology • Surface-Mountable Plastic Package Applications • W-CDMA Systems • Multi-Carrier Applications Min. 2110 29.0 -50.0 11.5 12.5 1.5:1 47.0 7.0 275 4.75 310 5.0 35 330 5.25 -47.0 13.5 Typ. Max. 2170 Output Power at 1dB Compression [1,2] Adjacent Channel Power [1] W-CDMA @ POUT = 20.1 dBm Small Signal Gain [1,2] Input VSWR [1,2] N O T Output Third Order Intercept Point Power out per tone = +14dBm [1,2] [2] Noise Figure Device Current Device Voltage [1,2] V cc Rth,j-l [1,2] Thermal Resistance (junction - lead), TL=85ºC [1] Optimal ACP tune [2] Optimal IP3 tune The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 N EW Active Bias • On-chip Active Bias Control • Power Control Allows Power Consumption D ES IG N S http://www.sirenza.com EDS-101429 Rev I SPA-1318 2150 MHz 1 Watt Power Amp. 2110-2170 MHz Application Circuit Data, Icc=320mA, Vcc=5V Note: Tuned for ACP W-CDMA @ 2.14GHz Adj. Channel Pwr. vs. Channel Output Pwr. Gain vs. Frequency -45 14 13 12 -55 -40C 85C 25C 11 10 9 8 2.11 -60 -65 16 17 18 19 dBm N EW 20 21 22 2.12 2.13 D ES IG N S 2.14 GHz -50 dBc dB 25C 85C -40C 2.15 2.16 2.17 31 30 29 28 27 2.11 R EC O M M EN D ED 25C 85C -40C dBm FO R -5 -10 -15 -20 -25 -30 -35 -40 2.11 dB 32 P1dB vs Frequency 0 Input/Output Return Loss, Isolation vs. Frequency, T=25° C S 11 S 12 S 22 2.12 2.13 2.14 GHz 2.15 2.16 2.17 2.12 2.13 2.14 GHz 2.15 2.16 2.17 450 400 350 300 250 200 150 100 Device Current vs. Source Voltage 25C -40C 85C Device Current (mA) N O T 50 0 0 1 2 3 Vcc (V) 4 5 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101429 Rev I SPA-1318 2150 MHz 1 Watt Power Amp. ACP Tune 2110 - 2170 MHz Schematic Vcc 8.2pF 10uF 1000pF 360 Ω 8.2pF 1 2 3 4 8 7 6 5 15 nH Z=50 Ω , 17.6° N EW FO R 22pF 2110 - 2170 MHz Evaluation Board Layout Vcc C3 Ref. Des. C1 C 2, C 5 C3 C4 C6 C7 L1 R1 R EC O M M EN D ED C4 C5 R1 L1 C2 C1 C7 C6 Sirenza Microdevices N O T Vpc ECB-101161 Rev. C SOIC-8 PA Eval Board 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 D ES IG N S 68pF 1.8pF Value 22pF, 5% 8.2pF, ±0.5pF 10uF, 10% 1000pF, 5% 1.8pF, ±0.25pF 68pF, 5% 15nH, 5% 360 Ohm, 5% Part Number Rohm MCH18 series Rohm MCH18 series AVX TAJB106K020R Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Toko LL1608-FS series Rohm MCR03 series http://www.sirenza.com EDS-101429 Rev I SPA-1318 2150 MHz 1 Watt Power Amp. Pin # 1 Function V cc Description VCC is the supply voltage for the active bias network. Bypassing in the appropriate location as shown on application schematic is required for optimum RF performance. Vbias is the bias control pin for the active bias network. Device current is set by the current into this pin. Recommended configuration shown in the Application Schematic is required for optimum RF performance. RF input pin. This pin requires the use of an external DC blocking capacitor. No connection 3 Device Schematic 1 2 V bi as D ES IG N S 2 ACTIVE BIAS NETWORK 5-8 3 4 5, 6, 7, 8 RF In N/C EPAD Gnd R EC O M M EN D ED FO R Absolute Maximum Ratings Parameter (Ta = 25°C) Max. Supply Current (ICC) at VCC typ. Max. Device Voltage (VCC) at ICC typ. Max. RF Input Power Max. Junction Temp. (TJ) Max. Storage Temp. Absolute Limit 750 mA 6.0 V 29 dB m +160 ºC +150 ºC Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: ICCVCC (max) < (TJ - TL)/Rth,j-l Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RFperformance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 5). Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. N O T The Moisture Sensitivity Level rating for this device is level 1 (MSL-1) based on the JEDEC 22-A113 standard classification. No special moisture packaging/handling is required during storage, shipment, or installation of the devices. 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 N EW http://www.sirenza.com EDS-101429 Rev I RF Out/Vcc RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. SPA-1318 2150 MHz 1 Watt Power Amp. Part Number Ordering Information Part Number SPA-1318 Devices Per Reel 500 Reel Siz e 7" Package Outline Drawing (See SMDI MPO-101644 for tolerances, available on our website) .194 [4.93] .236 [5.994] .155 [3.937] Lot ID SPA 1318 1 2 3 .045 [1.143] .035 [.889] 4 Beveled Edge .050 [1.27] .016 [.406] .061 [1.549] .008 [.203] FO R TOP VIEW .058 [1.473] N EW BOTTOM VIEW .013 [.33] x 45° .008 .194 [4.928] R EC O M M EN D ED .003 [.076] SEATING PLANE .155 [3.937] SEE DETAIL A END VIEW SIDE VIEW Recommended Land Pattern 0.150 [3.81] 0.140 [3.56] 0.300 [7.62] PARTING LINE Plated-Thru Holes (0.015" Dia, 0.030" Pitch) Machine Screws 0.080 [2.03] 0.050 [1.27] .025 N O T 5° DETAIL A Note: DIMENSIONS ARE IN INCHES [MM] 0.020 [0.51] 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 D ES IG N S EXPOSED PAD http://www.sirenza.com EDS-101429 Rev I 8 7 6 5