SPF-2086TK

Product Description Sirenza Microdevices’ SPF-2086TK is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent output TOI of 32 dBm. It provides ideal performance as driver stages in many commercial, industrial and military LNA applications. SPF-2086TK Low Noise pHEMT GaAs FET 0.1 - 6 GHz Operation 35 30 Gain, Gmax (dB) Typical Gain Performance 3v, 20mA 5v, 40mA 25 20 15 10 5 0 0 2 4 6 8 10 12 Gmax Gain Product Features • 22 dB Gmax at 1.9 GHz • 0.4 dB FMIN at 1.9 GHz • +32 dBm Output IP3 • +20 dBm Output Power at 1dB Compression Applications • LNA for Analog and Digital Wireless Systems • 3G, Cellular, PCS • Fixed Wireless, Pager Systems • Driver Stage for low power applications Test C ondition [1] = 100% Tested U nits Min. Typ. Max. Frequency (GHz) Symbol D evice C haracteristics, T = 25°C VDS=3V, IDQ=20mA (unless otherw ise noted) Gmax Maxi mum Avai lable Gai n ZS=ZS*, ZL=ZL* Inserti on Gai n ZS=ZL= 50 Ohms Mi ni mum Noi se Fi gure ZS=ΓOPT , ZL=ZLOPT Output Thi rd Order Intercept Poi nt ZS=ZSOPT , ZL=ZLOPT Output 1dB C ompressi on Poi nt ZS=ZSOPT, ZL=ZLOPT Saturated D rai n C urrent VDS = VDSP, VGS= 0V Tranconductance: VDS = VDSP, VGS= -0.25V Pi nch-Off Voltage: VDS = 2.0V, IDS = 150µA Gate-to-Source Breakdown Voltage IGS = 0.3mA, drai n open Gate-to-D rai n Breakdown Voltage IGD = 0.3mA, VGS = -3.0V Thermal Resi stance, juncti on-to-lead f f f f = = = = 0.9 1.9 4.0 6.0 GHz GHz GHz GHz [1] dB dB dB dB dB dB dB dB dB dB m dB m dB m dB m mA mS [1] [1] [1] o 16.0 30 -1.5 - 25.2 21.8 18.7 13.5 17.7 0.3 0.4 0.5 0.7 32 28 20 15 85 112 -1.0 -17 -17 110 19.4 140 -0.5 -8 -8 - S 21 f = 1.9 GHz f f f f = = = = 1 2 4 6 GHz GHz GHz GHz FMIN OIP3 P 1dB IDSS gm VP BVGS BVGD Rth VDS=5.0V, IDQ=40mA VDS=3.0V, IDQ=20mA VDS=5.0V, IDQ=40mA VDS=3.0V, IDQ=20mA V V V C /W The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101225 Rev. D SPF-2086TK Low Noise FET Absolute Maximum Ratings Operation of this device beyond any one of these parameters may cause permanent damage. MTTF is inversely proportional to the device junction temperature. For junction temperature and MTTF considerations the operating conditions should also satisfy the following experssions: PDC - POUT < (TJ - TL) / RTH where: PDC = IDS * VDS (W) POUT = RF Output Power (W) TJ = Junction Temperature (°C) TL = Lead Temperature (pin 4) (°C) RTH = Thermal Resistance (°C/W) Parameter D rai n C urrent Forward Gate C urrent Reverse Gate C urrent D rai n-to-Source Voltage Gate-to-D rai n Voltage Gate-to-Source Voltage RF Input Power Operati ng Temperature Storage Temperature Range Power D i ssi pati on C hannel Temperature Symbol IDS IGSF IGSR VDS VGD VGS PIN TOP Tstor PDISS TJ Value IDSS 0.3 0.3 +7 -8 0 100 -40 to +85 -40 to +150 600 +150 U nit mA mA mA V V V mW °C °C mW °C Noise parameters, at typical operating frequencies Bias VDS=3.0V, IDS=20mA FREQ GHZ 1.0 2.0 4.0 6.0 FMIN dB 0.28 0.44 0.54 0.70 |G OPT| 0.74 0.69 0.54 0.28 G OPT ANG 17 31 84 179 rN W 0.22 0.18 0.09 0.05 GA dB 23.1 17.8 13.9 12.2 Bias VDS=5.0V, IDS=40mA FREQ GHZ 1.0 2.0 4.0 6.0 FMIN dB 0.34 0.55 0.75 1.04 |G OPT| 0.76 0.67 0.47 0.31 G OPT ANG 19 36 93 -170 rN W 0.27 0.23 0.11 0.06 GA dB 23.9 19.1 15.0 12.9 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101225 Rev. D 2 SPF-2086TK Low Noise FET Scattering Parameters: Typical S-parameters VDS=3.0V, IDS=20 mA Freq GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 |S11| 0.97 0.92 0.85 0.76 0.67 0.58 0.51 0.46 0.42 0.40 0.41 0.44 0.48 0.51 0.54 0.57 0.60 0.63 0.66 0.69 0.70 0.71 0.72 0.75 0.76 0.77 0.77 S11 Ang -17.5 -34.2 -50.9 -69.2 -89.6 -109.6 -128.5 -146.4 -165.0 175.1 155.0 137.1 123.1 111.6 101.5 91.8 83.7 77.5 71.4 66.3 61.1 55.7 50.1 45.0 40.3 36.4 32.9 |S21| 8.07 7.76 7.40 7.06 6.67 6.16 5.64 5.16 4.74 4.37 4.04 3.71 3.43 3.18 2.96 2.75 2.55 2.40 2.26 2.13 2.02 1.92 1.81 1.70 1.60 1.51 1.47 S21 Ang 162.9 146.1 130.4 114.9 99.4 85.3 72.4 60.5 49.3 38.2 27.3 16.7 6.6 -2.9 -11.9 -21.0 -29.5 -37.4 -45.8 -54.0 -62.0 -69.9 -77.4 -84.6 -91.7 -98.6 -106.0 |S12| 0.01 0.03 0.04 0.05 0.06 0.06 0.07 0.08 0.08 0.09 0.09 0.10 0.10 0.10 0.11 0.11 0.12 0.12 0.13 0.14 0.14 0.15 0.15 0.16 0.16 0.16 0.17 S12 Ang 55.5 72.8 62.9 52.7 45.3 39.6 33.2 27.3 23.0 18.9 14.6 9.5 5.3 1.2 -2.1 -5.6 -9.3 -13.0 -17.5 -22.1 -26.8 -30.9 -35.0 -39.7 -44.1 -47.5 -51.7 |S22| 0.66 0.64 0.61 0.57 0.51 0.47 0.44 0.42 0.39 0.36 0.32 0.29 0.26 0.23 0.21 0.20 0.19 0.20 0.22 0.24 0.27 0.29 0.31 0.33 0.35 0.39 0.43 S22 Ang -10.0 -18.9 -27.5 -36.6 -46.7 -55.4 -62.2 -68.0 -73.9 -81.1 -90.9 -102.9 -115.7 -128.5 -141.7 -156.2 -170.9 172.1 154.7 140.5 128.5 119.0 109.5 99.8 90.3 81.2 75.0 Note : De-embedded to device pins 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101225 Rev. D 3 SPF-2086TK Low Noise FET Scattering Parameters: Typical S-parameters VDS=5.0V, IDS=40 mA Freq GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 |S11| 0.97 0.91 0.83 0.74 0.64 0.55 0.48 0.43 0.39 0.37 0.39 0.43 0.47 0.50 0.53 0.56 0.59 0.63 0.66 0.69 0.70 0.71 0.73 0.75 0.77 0.77 0.78 S11 Ang -18.2 -35.9 -53.3 -72.2 -92.9 -113.4 -132.3 -150.3 -169.1 170.9 151.2 134.3 121.0 110.1 100.4 91.3 83.3 77.2 71.5 66.6 61.3 55.7 50.2 45.0 40.3 36.3 32.7 |S21| 8.87 8.47 8.00 7.54 7.06 6.46 5.87 5.35 4.89 4.50 4.16 3.83 3.54 3.29 3.07 2.86 2.66 2.52 2.38 2.24 2.12 2.01 1.90 1.78 1.67 1.58 1.53 S21 Ang 162.0 144.6 128.4 112.6 97.1 83.2 70.5 58.8 47.9 37.0 26.3 15.9 6.0 -3.6 -12.7 -21.8 -30.2 -38.3 -46.8 -55.1 -63.3 -71.4 -79.0 -86.4 -93.7 -100.9 -108.4 |S12| 0.01 0.02 0.03 0.04 0.05 0.06 0.06 0.07 0.07 0.08 0.08 0.09 0.09 0.10 0.10 0.11 0.12 0.13 0.13 0.14 0.15 0.15 0.16 0.16 0.17 0.17 0.18 S12 Ang 92.8 66.4 60.3 54.0 46.6 40.7 35.9 31.9 27.9 25.5 22.1 17.2 13.3 9.6 5.7 2.4 -0.8 -4.6 -9.5 -14.2 -19.5 -24.4 -29.2 -33.8 -37.9 -42.2 -46.7 |S22| 0.68 0.67 0.64 0.60 0.55 0.51 0.48 0.46 0.44 0.42 0.38 0.35 0.32 0.30 0.28 0.26 0.25 0.26 0.27 0.29 0.31 0.33 0.35 0.36 0.38 0.42 0.46 S22 Ang -9.5 -18.1 -26.2 -34.5 -43.3 -50.9 -57.2 -62.6 -68.1 -75.1 -84.3 -95.0 -106.2 -117.6 -129.3 -141.5 -154.6 -170.3 172.9 157.4 144.0 133.5 123.1 112.6 102.0 91.7 83.7 Note : De-embedded to device pins 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101225 Rev. D 4 SPF-2086TK Low Noise FET Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Ordering Information Part Number SPF-2086TK Reel Size 7" Devices/Reel 1000 PCB Pad Layout Part Symbolization The part will be symbolized with the “P2T” designator and a dot signifying pin 1 on the top surface of the package. P2T Pin Designation 1 2 3 4 Gate Source Drain Source Package Dimensions P2T 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-101225 Rev. D 5