SZP-2026Z

Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a flexible final or driver stage for 802.16 and 802.11 equipment in the 2.22.7GHz bands. It can run from a 3V to 6V supply. It is prematched to ~5 ohms on the input for broadband performance and ease of matching at the board level. It features an output power detector, on/off power control, ESD protection, excellent overall robustness and a proprietary hand reworkable and thermally enhanced SOF-26 package. This product features a RoHS Compliant and Green package with matte tin finish, designated by the ‘Z’ suffix. SZP-2026Z 2.2-2.7GHz 2W InGaP Amplifier Pb RoHS Compliant & Green Package Proprietary SOF-26 Package Product Features • • • • • P1dB = 33.5dBm @ 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance Pout = 26dBm @ 2.5%EVM, Vcc 5V Pout = 27dBm @ 2.5% EVM, Vcc 6V On-chip Output Power Detector Input Prematched to ~5 ohms Proprietary Low Thermal Resistance Package Hand Solderable and Easy Rework Power up/down control < 1µs Functional Block Diagram Vcc = 5V SZP-2026 RFOUT RFIN Active Bias • • • Vbias = 5V Applications Power Detector Power Up/Dow n Control 802.16 WiMAX Driver or Output Stage 2.4GHz 802.11 WLAN and ISM Applications Unit MHz dBm dB dBm dBc dB dB V mA mA 395 8 8 Min. 2200 31.5 11.3 33 12.8 26.2 -45 4.3 12 12 0.85 to 1.4 445 2.1 10 12 495 -42 Typ. Max. 2700 Key Specifications Symbol fO P1dB S21 Pout IM3 NF IRL ORL Vdet Range Icq IVPC Ileak Rth, j-l Frequency of Operation Output Power at 1dB Compression – 2.7GHz Small Signal Gain – 2.7GHz Parameters: Test Conditions, 2.5-2.7GHz App circuit, Z0 = 50Ω, VCC = 5.0V, Iq = 445mA, TBP = 30ºC Output power at 2.5% EVM 802.11g 54Mb/s - 2.5GHz Third Order Suppression (Pout=23dBm per tone) - 2.7GHz Noise Figure at 2.7GHz Worst Case Input Return Loss 2.5-2.7GHz Worst Case Output Return Loss 2.5-2.7GHz Output Voltage Range for Pout=10dBm to 33dBm Quiescent Current (Vcc = 5V) Power Up Control Current (Vpc = 5V) Vcc Leakage Current (Vcc = 5V, Vpc = 0V) Thermal Resistance (junction - lead) µA ºC/W The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-104611 Rev C Preliminary SZP-2026Z 2.2-2.7GHz 2W Power Amp Typical Performance 2.4-2.5GHz App Circuit (Vcc=5V, Icq=445mA, * 802.11g 54Mb/s 64QAM) Parameter Gain P1dB Pout @ 2.5% EVM* Current @ Pout 2.5% EVM* Input Return Loss Output Return Loss Units dB dBm dBm mA dB dB 2.4GHz 13.3 33.5 26 550 16 16 2.5GHz 13.0 33.3 26 545 12 16 Typical Performance 2.5-2.7GHz - Refer to page 1 table Pin Out Description Pin # 1 2 3 4 5 6 GND Function VBIAS RFIN VPC VDET RFOUT/VCC NC GND Description This is the supply voltage for the active bias circuit. This is the RF input pin and has a DC voltage present. An external DC block is required. Power up/down control pin. The voltage on this pin should never exceed the voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited < 10mA. This is the output port for the power detector. It samples the power at the input of the amplifier. This is the RF output pin and DC connection to the collector. This pin is not connected internal to the package. Buss it to pin 5 as shown on the app circuit to achieve the specified performance. These pins are DC connected to the backside paddle. They provide good thermal connection to the backside paddle for hand soldering and rework. Many thermal and electrical GND vias are recommended as shown in the landing pattern. Absolute Maximum Ratings Parameters VC1 Collector Bias Current (IVC1) **Device Voltage (Vcc) Power Dissipation Operating Lead Temperature (TL) *Max RF output Power for 50 ohm continuous long term operation Max RF Input Power for 50 ohm output load Max RF Input Power for 10:1 VSWR output load Storage Temperature Range Operating Junction Temperature (TJ) ESD Human Body Model Value 1500 7.0 6 -40 to +85 30 28 23 -40 to +150 +150 1000 Unit mA V W ºC dBm dBm RFIN 2 VBIAS 1 Bias Simplified Device Schematic GND 6 5 NC RFOUT/VCC dBm ºC ºC V GND VPC 3 4 VDET Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH’ j-l Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. * With specified application circuit. ** No RF Drive 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-104611 Rev C Preliminary SZP-2026Z 2.2-2.7GHz 2W Power Amp Measured 2.4-2.5 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 445mA, T=25C) Source EVM = 0.6%, not deembedded from data. EVM vs Pout F=2.4GHz 802.11g, OFDM 54Mb/S, 64QAM 5.0 4.5 4.0 3.5 EVM(%) EVM(%) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 12 14 16 18 -40c 20 Pout(dBm) +25c 22 +85c 24 26 28 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 12 14 16 18 -40c 20 Pout(dBm) +25c 22 +85c 24 26 28 EVM vs Pout F=2.5GHz 802.11g, OFDM 54Mb/S, 64QAM IM3 vs Pout (2 Tone Avg.),T=+25c Tone Spacing = 1MHz -35 -40 Gain(dB) Typical Gain vs Pout, T=+25C 15 14 -45 IM3(dBc) -50 -55 -60 -65 18 20 22 Pout(dBm) 2.4GHz 2.5GHz 13 12 11 10 24 26 28 16 18 20 22 24 26 28 Pout(dBm) 2.5GHz 30 32 34 36 2.4GHz Typical Gain vs Pout, F=2.4GHz 15 15 Typical Gain vs Pout, F=2.5GHz 14 14 Gain(dB) 12 Gain(dB) 16 18 20 22 24 26 28 Pout(dBm) +25c 13 13 12 11 11 10 30 +85c 10 32 34 36 16 18 20 22 24 26 28 Pout(dBm) +25c 30 +85c 32 34 36 -40c -40c 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-104611 Rev C Preliminary SZP-2026Z 2.2-2.7GHz 2W Power Amp Measured 2.4-2.5 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 445mA, T=25C) Narrowband S11 - Input Return Loss 0 -20 Narrowband S12 - Reverse Isolation -5 -22 -10 -24 S11(dB) -15 S12(dB) 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 -26 -20 -28 -25 -30 -30 -32 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 Frequency(GHz) -40C +25C +85C Frequency(GHz) -40C +25C +85C Narrowband S21 - Forward Gain 15 14 13 12 -5 0 Narrowband S22 - Output Return Loss S21(dB) 10 9 8 7 6 5 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 S22(dB) 11 -10 -15 -20 -25 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 Frequency(GHz) -40C +25C +85C Frequency(GHz) -40C +25C +85C DC Supply Current vs Pout, F=2.4GHz 1.1 1 0.9 NF(dB) 0.8 Idc(A) 0.7 0.6 0.5 0.4 0.3 16 18 20 22 24 26 Pout(dBm) -40c +25c 28 +85c 30 32 34 6 5.5 5 4.5 4 3.5 3 2.5 2.3 Noise Figure vs Frequency, O.T. 2.35 2.4 Frequency(GHz) -40c +25c +85c 2.45 2.5 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-104611 Rev C Preliminary SZP-2026Z 2.2-2.7GHz 2W Power Amp Measured 2.4-2.5 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 445mA, T=25C) RF Power Detector (Vdet) vs Pout, F=2.4GHz 1.6 1.5 1.4 Vdet(V) Vdet(V) 1.3 1.2 1.1 1 0.9 0.8 16 18 20 22 -40c 24 26 Pout(dBm) +25c 28 +85c 30 32 34 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 16 18 20 22 -40c 24 26 Pout(dBm) +25c 28 +85c 30 32 34 RF Power Detector (Vdet) vs Pout, F=2.5GHz Broadband S11 - Input Return Loss 0 -10 Broadband S12 - Reverse Isolation -5 -15 -20 S11(dB) S12(dB) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -10 -25 -15 -30 -20 -35 -25 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency(GHz) -40C +25C +85C Frequency(GHz) -40C +25C +85C Broadband S21 - Forward Gain 15 0 Broadband S22 - Output Return Loss -5 10 -10 S21(dB) 5 S22(dB) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -15 0 -20 -5 -25 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency(GHz) -40C +25C +85C Frequency(GHz) -40C +25C +85C 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-104611 Rev C Preliminary SZP-2026Z 2.2-2.7GHz 2W Power Amp Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 445mA, T=25C) Source EVM = 0.6%, not deembedded from data. EVM vs Pout F=2.5GHz 802.11g, OFDM 54Mb/S, 64QAM 5.0 4.5 4.0 3.5 EVM(%) 2.5 2.0 1.5 1.0 0.5 0.0 12 14 16 18 -40c 20 Pout(dBm) +25c 22 +85c 24 26 28 EVM(%) 3.0 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 12 14 16 18 -40c 20 Pout(dBm) +25c 22 +85c 24 26 28 EVM vs Pout F=2.6GHz 802.11g, OFDM 54Mb/S, 64QAM EVM vs Pout F=2.7GHz 802.11g, OFDM 54Mb/S, 64QAM 5.0 4.5 4.0 3.5 EVM(%) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 12 14 16 20 22 24 Pout(dBm) -40c +25c +85c 18 26 28 IM3 vs Pout (2 Tone Avg.),T=+25c Tone Spacing = 1MHz -35 -40 -45 IM3(dBc) -50 -55 -60 -65 18 20 2.5GHz 22 Pout(dBm) 24 2.6GHz 26 2.7GHz 28 Typical Gain vs Pout, T=+25C 15 15 Typical Gain vs Pout, F=2.5GHz 14 14 Gain(dB) 13 Gain(dB) 16 18 20 22 24 2.5GHz 13 12 12 11 11 10 26 28 Pout(dBm) 2.6GHz 10 30 2.7GHz 32 34 36 16 18 20 22 24 26 28 Pout(dBm) +25c 30 +85c 32 34 36 -40c 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-104611 Rev C Preliminary SZP-2026Z 2.2-2.7GHz 2W Power Amp Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 445mA, T=25C) Typical Gain vs Pout, F=2.6GHz 15 15 Typical Gain vs Pout, F=2.7GHz 14 14 Gain(dB) 12 Gain(dB) 13 13 12 11 11 10 16 18 20 22 24 26 28 Pout(dBm) +25c 10 30 +85c 32 34 36 16 18 20 22 24 26 28 Pout(dBm) +25c 30 +85c 32 34 36 -40c -40c Narrowband S11 - Input Return Loss 0 -22 -24 -5 -26 Narrowband S12 - Reverse Isolation S11(dB) S12(dB) 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 -10 -28 -30 -32 -15 -20 -34 -25 -36 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 Frequency(GHz) -40C +25C +85C Frequency(GHz) -40C +25C +85C Narrowband S21 - Forward Gain 14 13 -5 12 11 10 9 8 -20 7 6 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 -25 2.0 2.1 -10 0 Narrowband S22 - Output Return Loss S21(dB) S22(dB) -15 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 Frequency(GHz) -40C +25C +85C Frequency(GHz) -40C +25C +85C 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 7 http://www.sirenza.com EDS-104611 Rev C Preliminary SZP-2026Z 2.2-2.7GHz 2W Power Amp Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 445mA, T=25C) DC Supply Current vs Pout, T=+25C 1.1 1 0.9 0.8 Idc(A) Idc(A) 0.7 0.6 0.5 0.4 0.3 16 18 20 22 24 26 Pout(dBm) 2.6GHz 28 30 2.7GHz 32 34 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 16 18 20 22 -40c 24 26 Pout(dBm) +25c 28 +85c 30 32 34 DC Supply Current vs Pout, F=2.6GHz 2.5GHz Noise Figure vs Frequency, O.T. 6 5.5 5 NF(dB) Vdet(V) 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 RF Power Detector (Vdet) vs Pout, F=2.5GHz 4.5 4 3.5 3 2.5 2.5 2.55 2.6 Frequency(GHz) -40c +25c +85c 2.65 2.7 0.8 16 18 20 22 24 26 Pout(dBm) +25c 28 30 32 34 -40c +85c RF Power Detector (Vdet) vs Pout, F=2.6GHz 1.8 1.7 1.6 1.5 Vdet(V) Vdet(V) 1.4 1.3 1.2 1.1 1 0.9 0.8 16 18 20 22 -40c 24 26 Pout(dBm) +25c 28 +85c 30 32 34 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 16 RF Power Detector (Vdet) vs Pout, F=2.7GHz 18 20 22 -40c 24 26 Pout(dBm) +25c 28 +85c 30 32 34 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 8 http://www.sirenza.com EDS-104611 Rev C Preliminary SZP-2026Z 2.2-2.7GHz 2W Power Amp Measured 2.5-2.7 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 445mA, T=25C) Broadband S11 - Input Return Loss 0 -10 Broadband S12 - Reverse Isolation -5 -15 -20 S11(dB) S12(dB) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -10 -25 -15 -30 -20 -35 -25 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency(GHz) -40C +25C +85C Frequency(GHz) -40C +25C +85C Broadband S21 - Forward Gain 15 0 Broadband S22 - Output Return Loss -5 10 S21(dB) 5 S22(dB) -10 -15 0 -20 -5 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -25 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency(GHz) -40C +25C +85C Frequency(GHz) -40C +25C +85C 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 9 http://www.sirenza.com EDS-104611 Rev C Preliminary SZP-2026Z 2.2-2.7GHz 2W Power Amp 2.4-2.5 GHz Application Circuit For V+ = Vcc = Vpc = 5.0V 1 Bias 6 5 2 3 SZP-2026 4 2.4-2.5GHz Evaluation Board Layout For V+ = Vcc = Vpc = 5.0V Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper R2 C3 C4 C5 C6 Q1 C7 R3 R1 C2 L1 C1 C8 R4 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 10 http://www.sirenza.com EDS-104611 Rev C Preliminary SZP-2026Z 2.2-2.7GHz 2W Power Amp 2.5-2.7 GHz Application Circuit For V+ = Vcc = Vpc = 5.0V 1 Bias 6 5 2 3 SZP-2026 4 2.5-2.7GHz Evaluation Board Layout For V+ = Vcc = Vpc = 5.0V Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper R2 C3 C4 C5 C6 Q1 C7 R3 R1 C2 L1 C1 C8 R4 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 11 http://www.sirenza.com EDS-104611 Rev C Preliminary SZP-2026Z 2.2-2.7GHz 2W Power Amp Part Symbolization The part will be symbolized with “SZP-2026Z” to designate it as a RoHS green compliant product. Marking designator will be on the top surface of the package. Part Number Ordering Information Part Number SZP-2026Z* * Matte tin finish Reel Size 13” Devices/Reel 3000 Package Outline Drawing (dimensions in mm [in]): SPA Recommended Metal Land Pattern (dimensions in mm [in]): 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 12 http://www.sirenza.com EDS-104611 Rev C