42-DL213B

42-DL213B Version Issue Date File Name Total Pages : A.003 : 2006/12/13 : SP-DL213B-A.003.doc :6 Optical Fiber Transmitting IC 新竹市科學園區展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-7F-1, Prosperity Road I, Science Based Industrial Park, Hsin-Chu, Taiwan 300, R.O.C. Fax：886-3-5645626 Tel：886-3-5645656 點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. 42-DL213B 42-DL213B OPTICAL FIBER TRANSMITTING IC GENERAL DESCRIPTION 42-DL213B is a driver IC designed for the application of high-speed optical fiber transmission. It integrates the LED driver with constant current output to reduce the complexity and the cost of the transmission module. 42-DL213B can transmit with the speed up to 25Mb/s. 42-DL213B are fabricated by using CMOS technology with low power consumption purpose. FEATURES 1. TTL interface compatible 2. High speed (up to 25Mb/s) 3. Uniform output waveform 4. Constant current output 5. Low power consumption 6. Wide range for Supply Voltage (2.7V-5.5V) BLOCK DIAGRAM And APPLICATION CIRCUIT Power 42-DL213B VDD OUT Signal IN VSS Ground SP-DL213B-A.003 -1- Version：A.003 點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. 42-DL213B ABSOLUTE MAXIMUM RATINGS Item Supply Voltage Input Voltage Operating Temperature Storage Temperature Electrostatic Damage Output Sinking Current Symbol VDD VIN Topr Tstg ESD IOUT Rating -0.5 to +7 -0.5 to VDD +0.5 -40 to +85 -55 to +100 6.5 50 Unit V V ℃ ℃ kV mA RECOMMENDED OPERATING CONDITIONS ITEM Supply Voltage High Level Input Voltage Low Level Input Voltage SYMBOL VDD VIH VIL MIN. 2.7 2.0 0 TYP. MAX. UNIT 5.5 VDD 0.8 V V V ELECTRICAL CHARACTERISTICS (VDD=5.0V, TA=25℃, if not mentioned ) ITEM High Level Input Voltage Low Level Input Voltage Input Leakage Current Quiescent Supply Current Output Sinking Current SYMBOL VIH VIL IIN IDDQ IOUT_ON CONDITIONS MIN. TYP. MAX. UNIT VDD= 3V or 5V VDD= 3V or 5V VIN=VDD or VSS VIN = VDD or VSS VDD=3V or 5V, VIN=VDD, VFLED=2.0V VDD=3V or 5V, VOUT=3V, VIN=VSS VDD=3V, CLED=15pF, VFLED=2.0V VDD=3 V, CLED=15pF, VFLED=2.0V CLED=15pF, VFLED=2.0V CLED=15pF, VFLED=2.0V NRZ Code, CLED=15pF, VFLED=2.0V 2.0 0 3.5 5.4 4.4 VDD 0.8 1 5.3 V V uA mA mA Output Leakage Current IOUT_OFF - - 5 uA Propagation Delay Rise Time, Fall Time of IOUT Pulse Width Distortion Jitter of Output Current Data Rate TPLH , TPHL - - 100 ns Tr, Tf Δtw Δtj FDATA - 10 0 1 10 10 25 25 ns ns ns Mb/s - - Note1：IOUT = IOUT_OFF when Vin=5V, VDD=floating. SP-DL213B-A.003 -2- Version：A.003 點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. 42-DL213B PAD DESCRIPTIONS PAD NO. 1 2 3 4 PAD NAME IN VDD OUT VSS DESCRIPTIONS Input Pad(High Active) Supply Voltage Output Pad Sinking Current(Active Low) Ground DIE CONFIGURATION (387.1, 422.5) 1. 2. VDD Center (66, 273.7) IN Center (248.9, 336.5) Center (321.2, 66) 3. OUT 4. VSS Center (76.2, 73.7) (0, 0) Die Size: 387.1um * 422.5um Die Thickness: 15mil(=381um) Pad Size: 90um * 90um Unit：um * Note: SiTI reserves the right to improve the device geometry and manufacturing processes without prior notice. Though these improvements may result in slight geometry changes, they will not affect die electrical characteristics and pad layouts. SP-DL213B-A.003 -3- Version：A.003 點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. 42-DL213B REQUIREMENTS FOR WAFER DELIVERY Material： Silicon with P-Substrate Diameter： 6 inches(≒15cm) Thickness： 15 mils(≒381um) Malfunctioned die：Marked with red ink or equivalent marking HANDLING RECOMMENDATION FOR STATIC ELECTRICITY PROTECTION (1) Avoid any circumstance that produce static electricity, e.g. rubbing against plastic, during moving, storing and processing 42-DL213B. (2) Process 42-DL213B in a clean room with proper temperature and humidity. (3) Ground all working machines and workers wear anti-electrostatic ring to ground during processing. (4) Avoid contact 42-DL213Bwith bare hands .If unavoided, wear anti-electrostatic ring and use anti-electrostatic tool to pick it up. GUARANTED TEMPERATURE AND RETENTION CYCLE (1) The device/wafer 42-DL213B should be stored in the nitrogenous chest. The conditions suggested are as follows: Temperature = 23±3℃ Relative Humidity = 50±10% Minimum nitrogen inflow = 3 liters/minute (2) If the device/wafer, 42-DL213B is incidentally exposed to the air, use it for manufacturing as soon as possible. (3) Under the storage environment specified in item (1), six-month safe storage period is guaranteed. SP-DL213B-A.003 -4- Version：A.003 點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. 42-DL213B The products listed herein are designed for ordinary electronic applications, such as electrical appliances, audio-visual equipment, communications devices and so on. Hence, it is advisable that the devices should not be used in medical instruments, surgical implants, aerospace machinery, nuclear power control systems, disaster/crime-prevention equipment and the like. Misusing those products may directly or indirectly endanger human life, or cause injury and property loss. Silicon Touch Technology, Inc. will not take any responsibilities regarding the misusage of the products mentioned above. Anyone who purchases any products described herein with the above-mentioned intention or with such misused applications should accept full responsibility and indemnify. Silicon Touch Technology, Inc. and its distributors and all their officers and employees shall defend jointly and severally against any and all claims and litigation and all damages, cost and expenses associated with such intention and manipulation. SP-DL213B-A.003 -5- Version：A.003