AFM06P2-212

Ka Band Power GaAs MESFET AFM06P2-212, 213 Features s 22 dBm Output Power at 18 GHz s High Associated Gain, 9 dB at 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC–18 GHz s 0.25 µm Ti/Pd/Au s Passivated Surface Source 212 Drain Drain Source Gate Source 213 Source Gate Description The AFM06P2-212, 213 is a high performance power GaAs MESFET chip in an industry standard ceramic micro-x package, having a gate length of 0.25 µm and a total gate periphery of 600 µm. The device has excellent gain and power performance through 26 GHz making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. The device employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged reliable part. Absolute Maximum Ratings Parameter Drain to Source Voltage (VDS) Gate to Source Voltage (VGS) Drain Current (IDS) Gate Current (IGS) Total Power Dissipation (PT) Channel Temperature (TCH) Storage Temperature (TST) Value 6V –4 V IDSS 1 mA 1.1 W 175°C –65 to +150°C Electrical Specifications at 25°C Parameter Saturated Drain Current Transconductance Pinch–Off Voltage Gate to Drain Breakdown Voltage Output Power at 1dB Compression Gain at 1dB Compression Power Added Efficiency Symbol IDSS gm VP VBGD P G 1 dB 1 dB Test Conditions VDS = 2 V, VGS = 0 V VDS = 5 V, IDS = 1.5 mA IGD = 600 µA VDS = 5 V, IDS = 70 mA, F = 18 GHz Min. 130 90 1 8 – – – Typ. 200 120 3 12 22 9 23 Max. 270 – 5 – – – – Unit mA mS V V dBm dB % ηadd Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 2/99A 1 Ka Band Power GaAs MESFET AFM06P2-212, 213 Typical S-Parameters (VDS = 5 V, IDS = 100 mA) Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Mag. 0.827 0.841 0.776 0.773 0.772 0.729 0.652 0.680 0.720 0.666 0.631 0.644 0.657 0.748 0.847 0.850 0.805 0.847 0.831 0.791 0.866 0.836 0.853 0.958 0.844 0.733 S11 Ang. -37.8264 -71.7158 -95.9016 -116.1009 -136.3639 -159.5267 177.0366 154.3013 135.1126 117.7185 100.5973 76.8920 64.6829 52.4407 37.8038 22.3398 8.2106 -2.1121 -5.6214 -6.5681 -20.5483 -35.5536 -52.6197 -69.2200 -81.7547 -104.6242 Mag. 7.3390 6.0499 5.0784 4.4165 4.0687 3.6170 3.3407 3.1085 2.8509 2.6700 2.3131 2.0077 1.9441 1.8819 1.7404 1.5849 1.4012 1.2311 1.1617 1.0774 1.1110 1.1102 1.0759 1.0823 1.0406 0.9783 S21 Ang. 153.0160 122.7182 98.6981 83.7214 61.0411 42.4229 26.8719 11.1292 -1.4693 -17.9531 -33.8962 -49.6463 -62.8550 -81.2585 -98.7912 -114.6893 -126.9353 -137.7326 -149.0193 -161.2119 -177.5857 164.5367 146.8712 131.6291 112.8443 88.5591 Mag. 0.0202 0.0340 0.0423 0.0496 0.0574 0.0621 0.0695 0.0769 0.0818 0.0898 0.0907 0.0921 0.1041 0.1203 0.1282 0.1336 0.1314 0.1283 0.1356 0.1371 0.1568 0.1726 0.1744 0.1820 0.1822 0.1721 S12 Ang. 76.0460 57.6193 43.4674 41.8927 28.5307 20.3616 14.1562 9.6583 3.2226 -5.3931 -14.6182 -24.4491 -27.3280 -42.4402 -56.5826 -70.6290 -79.1178 -86.3122 -95.3322 -105.6583 -119.1149 -134.0608 -148.6982 -161.9434 -177.5051 159.3426 Mag. 0.5006 0.3925 0.3538 0.2474 0.2514 0.2539 0.2666 0.2744 0.2352 0.2551 0.2561 0.2076 0.2744 0.3667 0.3722 0.3581 0.3802 0.4026 0.5087 0.5497 0.4284 0.4058 0.4751 0.5114 0.4558 0.3791 S22 Ang. -36.961 -44.484 -60.536 -67.747 -80.500 -105.251 -122.438 -136.476 -147.323 -164.635 178.758 166.633 135.000 119.222 107.510 88.987 62.424 43.087 38.695 33.199 22.075 -11.227 -42.014 -46.505 -62.423 -103.875 22.5047 20.7939 19.4986 18.5080 17.6540 14.9166 16.0668 15.4208 13.3968 10.7345 9.1700 9.2358 11.9422 11.3280 10.7432 10.2803 9.8217 9.3289 8.9538 8.5032 8.0846 7.9027 7.7438 7.5681 4.2994 Mag./Msg. (dB) Typical Performance Data VGS = 0 V 120 –0.5 V Total Power Dissipation PT (W) 150 1.50 1.25 1.00 0.75 0.50 0.25 0 0 50 100 150 200 IDS (mA) 90 60 30 –2.0 V 0 0 1 2 3 4 5 –2.5 V –1.0 V –1.5 V VDS (V) TBASE (°C) I –V Power Derating 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 2/99A