SC01500710

MIS Chip Capacitors SC Series Features ■ Readily Available From Stock ■ High Reliability Silicon Oxide–Nitride Dielectric ■ Low Loss — Typically 0.04 dB in a 50 Ω System ■ Operation through 26 GHz Absolute Maximum Ratings ■ Wide Temperature Operation Characteristic Value Operating Temp Range (TOP) -65 to +200°C Description Storage Temp Range (TSTG) -65 to +200°C Alpha’s MIS Chip Capacitors are available in a wide range of sizes and capacitance values. They are frequently used in applications requiring DC blocking, and RF bypassing, or as a fixed capacitance tuning element in filters, oscillators, and matching networks. The devices have a dielectric composed of thermally grown silicon dioxide over which a layer of silicon nitride is deposited. This dielectric possesses a low temperature coefficient of capacitance, very high insulation resistance. The devices also exhibit excellent long term stability making them suitable for high reliability applications. The capacitors have a high dielectric breakdown which permits the use of thin dielectrics resulting in larger capacitance per unit area than our previous catalog offerings. The temperature coefficient is less that 50 ppm/°C, and operation is suitable from -65°C to 200°C. Compared to ceramic capacitors, Skyworks’ MIS chip capacitors offer higher Q, and a lower insertion loss of 0.04 dB, in a 50 Ω system. Insulation resistance is greater than 105M Ω. To accommodate high volume automated assembly methods, wafers can be supplied on expanded film frame. To reduce cost, chips can be supplied with only sample testing packaged in vials. Packaging in waffle packs with 100% electrical test and visual inspection is always available if required. Dielectric Withstanding Voltage 100 V Electrical Specifications Capacitance Range1: 0.8 to 1000 pF Temperature Coefficient: 50 ppm/°C Typical Capacitance Tolerance2: ±20% Operating Temperature: -65°C to 200°C Dielectric Withstanding Voltage: 100 V Insulation Resistance: 105 Megohms Typical Leakage Current: Typ. < 1 nA Typical SPDT Switch BIAS BIAS OUTPUT C2 C3 INPUT 1 INPUT 2 C1 D1 D2 C4 C2, C3 — Chip MIS Capacitor C1, C4 — Chip or Beam — Lead MIS Capacitor D1, D2 DSG6474 Beam — Lead PIN Diode Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email sales@skyworksinc.com • www.skyworksinc.com Specifications subject to change without notice. 10/02A 1 MIS Chip Capacitors SC Series Example Part Number Capacitance (+ 20%) Chip Dimensions (+ 1 mil) SC00080710 0.8 7 mil Pad/10 mil Chip SC00080912 0.8 9 mil Pad/12 mil Chip SC00120710 1.2 7 mil Pad/10 mil Chip SC00120912 1.2 9 mil Pad/12 mil Chip SC00180710 1.8 7 mil Pad/10 mil Chip SC00180912 1.8 9 mil Pad/12 mil Chip SC00260710 2.6 7 mil Pad/10 mil Chip SC00260912 2.6 9 mil Pad/12 mil Chip SC00380710 3.8 7 mil Pad/10 mil Chip ♦ SC00380912 3.8 9 mil Pad/12 mil Chip SC00560710 5.6 7 mil Pad/10 mil Chip ♦ SC00560912 5.6 9 mil Pad/12 mil Chip SC00680710 6.8 7 mil Pad/10 mil Chip SC00680912 6.8 9 mil Pad/12 mil Chip SC00820710 8.2 7 mil Pad/10 mil Chip ♦ SC00820912 8.2 9 mil Pad/12 mil Chip SC00821518 8.2 15 mil Pad/18 mil Chip SC01000710 10 7 mil Pad/10 mil Chip ♦ SC01000912 10 9 mil Pad/12 mil Chip SC01001518 10 15 mil Pad/18 mil Chip SC01500710 15 7 mil Pad/10 mil Chip SC01500912 15 9 mil Pad/12 mil Chip SC01501518 15 15 mil Pad/18 mil Chip ♦ SC02200912 22 9 mil Pad/12 mil Chip SC02201518 22 15 mil Pad/18 mil Chip SC03301518 33 15 mil Pad/18 mil Chip SC04701518 47 15 mil Pad/18 mil Chip ♦ SC06801518 68 15 mil Pad/18 mil Chip SC10002430 100 24 mil Pad/30 mil Chip ♦ SC10003440 100 34 mil Pad/40 mil Chip SC22203440 222 34 mil Pad/40 mil Chip ♦ SC33303440 333 34 mil Pad/40 mil Chip SC50004450 500 44 mil Pad/50 mil Chip ♦ SC99906068 1000 60 mil Pad/68 mil Chip ♦ Available through distribution. Part Number Structure — SCXXXXYYZZ where: SC = Silicon Capacitor XXXX = Capacitance (pF) YY = Square Contact Size (mils) ZZ = Square Chip Size (mils) ZZ ± 0.001˚ YY ± 0.001˚ 0.005 ± 0.001˚ CHIP THICKNESS Performance Data Tests on typical MIS capacitors at L and S band show insertion loss to be 1/2 to 1/3 that of equivalent ceramic type capacitors, without any of the associated resonance problems. Power tests indicate that the only limitation is the actual breakdown voltage of the device (see data section). A typical insertion loss versus frequency graph is shown in Figure 1. This data is taken from an actual tests circuit with series mounted beam-lead or chip capacitors on a 50 Ω microstrip transmission line. The apparent higher loss at lower frequencies on the lower capacitance units is strictly due to the capacitive reactance of the capacitor. 10.0 Insertion Loss (dB) Electrical Specifications 1 pF 1.0 8.2 pF 100 pF 0.10 47 pF 1–47 pF 100 pF 0.01 2 6 10 14 Frequency (GHz) Figure 1. Typical Insertion Loss vs. Frequency (50 Ω System) 2 Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email sales@skyworksinc.com • www.skyworksinc.com Specifications subject to change without notice. 10/02A 18