1T403

1T403 Variable Capacitance Diode Description The 1T403 is a variable capacitance diode designed for electronic tuning of VHF TV tuners and CATV tuners using a super-small-miniature flat package (SSVC). Features • Super-small-miniature flat package • Low series resistance: 0.8 Ω Max. (f=470 MHz) • Large capacitance ratio: 15.0 Typ. (C1/C28) • Small leakage current: 10 nA Max. (VR=28 V) • Capacitance deviation in a matching group: within 2 % Applications Electronic tuning of TV and CATV tuners Structure Silicon epitaxial planar type diode M-290 Absolute Maximum Ratings (Ta=25 °C) • Reverse voltage VR 30 V • Peak reverse voltage VRM 35 V (RL≥10 kΩ) • Operating temperature Topr –20 to +75 °C • Storage temperature Tstg –65 to +150 °C Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol IR C1 C28 C1/C28 rs ∆C Conditions VR=28 V VR=1 V, f=1 MHz VR=28 V, f=1 MHz CD=14 pF, f=470 MHz VR=1 to 28 V, f=1 MHz Min. Typ. Max. 10 42.31 2.714 15.0 0.75 0.80 2 (Ta=25 °C) Unit nA pF pF Ω % 34.61 2.321 13.5 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E95916-TE 1T403 Diode capacitance vs. Reverse voltage 100 Ta=25°C 50 100 Reverse current vs. Ambient temperature VR=28V C-Diode capacitance (pF) 10 5 IR-Reverse current (pA) 1 2 5 10 20 VR-Reverse voltage (V) 50 20 10 2 1 1 –20 0 20 40 60 Ta-Ambient temperature (°C) 80 Forward voltage vs. Ambient temperature 0.80 45 Reverse voltage vs. Ambient temperature VF-Forward voltage (V) 0.70 VR-Reverse voltage (V) IF=1mA IR=10µA 40 0.60 35 0.50 –20 0 20 40 60 Ta-Ambient temperature (°C) 80 30 –20 0 20 40 60 Ta-Ambient temperature (°C) 80 —2— 1T403 Diode capacitance vs. Ambient temperature 1.03 VR=1V C (Ta)/C (25°C)-Diode capacitance 1.02 VR=2V VR=7V VR=28V VR=15V 1.01 1.00 0.99 0.98 –20 0 20 40 60 Ta-Ambient temperature (°C) 80 Reverse current vs. Reverse voltage 100 1000 Temperature coefficient of diode capacitance Temperature coefficient (ppm/°C) Ta=25°C 500 Ta=80°C IR-Reverse current (pA) 10 200 Ta=60°C 100 50 1 2 20 5 10 VR-Reverse voltage (V) 50 1 0.1 1 3 10 30 VR-Reverse voltage (V) —3— 1T403 Package Outline Unit : mm M-290 1.3 ± 0.1 A 1.7 ± 0.1 0.8 ± 0.1 0.2 M A 10° MAX b c 10° MAX 0.7 ± 0.1 BASE METAL WITH PLATING c b 0.11 ± 0.005 0.3 ± 0.025 + 0.11 – 0.05 0.01 + 0.05 0.3 – 0.02 PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE M-290 LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT EPOXY RESIN SOLDER PLATING COPPER 0.002g Mark 1 S3 2 1 : Cathode 2 : Anode —4— 0.2 ± 0.05