1T410

1T410 Variable Capacitance Diode Description The 1T410 is a variable capacitance diode designed for electronic tuning of BS/CS tuners using a super-small-miniature flat package (SSVC). Features • Super-small-miniature flat package • Low series resistance: 1.5 Ω Max. (f=470 MHz) • Large capacitance ratio: 12.0 Typ. (C1/C25) • Small leakage current: 10 nA Max. (VR=25 V) • Capacitance deviation in a matching group: within 6 % Applications Electronic tuning of BS/CS tuners Structure Silicon epitaxial planar type diode M-290 Absolute Maximum Ratings (Ta=25 °C) • Reverse voltage VR 30 V • Peak reverse voltage VRM 35 V (RL ≥ 10 kΩ) • Operating temperature Topr –20 to +75 °C • Storage temperature Tstg –65 to +150 °C Electrical Characteristics Item Reverse current Reverse voltage Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol IR VR C1 C25 C1/C25 rs ∆C Conditions VR=25 V IR=1 µA VR=1 V, f=1 MHz VR=25 V, f=1 MHz VR=5 V, f=470 MHz VR=1 to 25 V, f=1 MHz Min. Typ. Max. 10 30 5.96 0.46 10.0 7.16 0.60 12.0 1.30 1.50 6 (Ta=25 °C) Unit nA v pF pF Ω % Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E96145A67-TE 1T410 Diode capacitance vs. Reverse voltage 10 5 Ta=25°C 100 Reverse current vs. Ambient temperature VR=28V C-Diode capacitance (pF) 2 1 0.5 10 0.2 0.1 1 2 5 10 20 VR-Reverse voltage (V) 50 IR-Reverse current (pA) 1 0.1 –20 0 20 40 60 Ta-Ambient temperature (°C) 80 Forward voltage vs. Ambient temperature 0.90 45 IF=1mA Reverse voltage vs. Ambient temperature IR=10µA VF-Forward voltage (V) VR-Reverse voltage (V) 0 20 40 60 Ta-Ambient temperature (°C) 80 0.80 40 0.70 35 0.60 –20 30 –20 0 20 40 60 Ta-Ambient temperature (°C) 80 —2— 1T410 Diode capacitance vs. Ambient temperature 1.03 VR=1V C (Ta)/C (25°C)-Diode capacitance 1.02 VR=2V VR=7V 1.01 VR=25V VR=15V 1.00 0.99 0.98 –20 0 20 40 60 Ta-Ambient temperature (°C) 80 Reverse current vs. Reverse voltage 100 Ta=80°C 1000 Temperature coefficient of diode capacitance Temperature coefficient (ppm/°C) 500 IR-Reverse current (pA) 10 200 Ta=60°C 100 1 Ta=25°C 50 1 2 5 10 VR-Reverse voltage (V) 20 50 0.1 1 3 10 VR-Reverse voltage (V) 30 —3— 1T410 Package Outline Unit : mm M290 3}0. 1 1. A 7}0. 1 1. 0. 0. 1 8} 2 0. M A 10KM AX b c 10K AX M 7}0. 1 0. BASE M ETAL W I PLATI G TH N c b 0. 11}0. 005 0. 3}0. 025 0. {0. 05 11|0. 01 0. {0. 05 3|0. 02 PAC KAG E M ATER I AL SO N Y C O D E EI C O D E AJ JED EC C O D E M290 LEAD TR EATM EN T LEAD M ATER I AL PAC KAG E W EI H T G EPO XY R ESI N SO LD ER PLATI G N C O PPER 0. 002g Mark 1 X0 1 : Cathode 2 2 : Anode —4— 2}0. 05 0.