1T417

1T417 Variable Capacitance Diode Description The 1T417 is a variable capacitance diode designed for electronic tuning of BS/CS tuners using a super-small-miniature flat package (SSVC). Features • Super-small-miniature flat package • Low series resistance: 1.5 Ω Max. (f=470 MHz) • Large capacitance ratio: 15.5 Typ. (C1/C25) • Small leakage current: 10 nA Max. (VR=25 V) • Capacitance deviation in a matching group: within 6 % Applications Electronic tuning of BS/CS tuners Structure Silicon epitaxial planar type diode M-290 Absolute Maximum Ratings (Ta=25 °C) • Reverse voltage VR 30 V • Peak reverse voltage VRM 35 V (RL ≥ 10 kΩ) • Operating temperature Topr –20 to +75 °C • Storage temperature Tstg –65 to +150 °C Electrical Characteristics Item Reverse current Reverse voltage Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol IR VR C1 C25 C1/C25 rs ∆C Conditions VR=25 V IR=1 µA VR=1 V, f=1 MHz VR=25 V, f=1 MHz VR=5 V, f=470 MHz VR=1 to 25 V, f=1 MHz Min. 30 7.8 0.5 13.0 Typ. Max. 10 9.4 0.6 1.50 6.0 (Ta=25 °C) Unit nA V pF pF Ω % 8.6 15.5 1.30 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E98905-TE 1T417 Example of Representative Characteristics Diode capacitance vs. Reverse voltage 10 5 C-Diode capacitance (pF) IR-Reverse current (pA) Ta=25°C 1000 Reverse current vs. Ambient temperature VR=25V 2 1 0.5 100 0.2 0.1 1 2 5 10 20 50 VR-Reverse voltage (V) 10 –20 0 20 40 60 80 Ta-Ambient temperature (°C) Forward voltage vs. Ambient temperature 0.90 VR-Reverse voltage (V) VF-Forward voltage (V) IF=1mA 0.80 45 Reverse voltage vs. Ambient temperature IR=10µA 40 0.70 35 0.60 –20 0 20 40 60 80 30 –20 0 20 40 60 80 Ta-Ambient temperature (°C) Ta-Ambient temperature (°C) —2— 1T417 Diode capacitance vs. Ambient temperature 1.03 VR=1V C (Ta)/C (25°C)-Diode capacitance 1.02 VR=2V VR=7V 1.01 VR=25V VR=15V IR-Reverse current (pA) 10 100 Reverse current vs. Reverse voltage 1.00 Ta=80°C 0.99 0.98 –20 Ta=60°C 1 0 20 40 60 80 Ta-Ambient temperature (°C) Ta=25°C 0.1 1 Temperature coefficient of diode capacitance 1000 Temperature coefficient (ppm/°C) 500 3 10 30 VR-Reverse voltage (V) 200 100 50 30 1 2 5 10 20 50 VR-Reverse voltage (V) —3— 1T417 Package Outline Unit : mm M-290 1.3 ± 0.1 A 1.7 ± 0.1 0.8 ± 0.1 0.2 M A 10° MAX b c 10° MAX 0.7 ± 0.1 BASE METAL WITH PLATING c b 0.11 ± 0.005 0.3 ± 0.025 + 0.11 – 0.05 0.01 + 0.05 0.3 – 0.02 PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE M-290 LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT EPOXY RESIN SOLDER PLATING COPPER 0.002g Mark 1 X7 2 1 : Cathode 2 : Anode —4— 0.2 ± 0.05