3SK165A-0

3SK165A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga = 20dB (typ) at 800MHz • High stability Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) • Drain to source voltage VDSX 8 • Gate 1 to source voltage VG1S –6 • Gate 2 to source voltage VG2S –6 • Drain current ID 80 • Allowable power dissipation PD 150 • Channel temperature Tch 150 • Storage temperature Tstg –55 to +150 V V V mA mW °C °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E96Y12-PS 3SK165A Electrical Characteristics Item Drain cut-off current Symbol IDSX Condition Min. Typ. VDS = 8V VG1S = –4V VG2S = 0V VG1S = –4V IG1SS VG2S = 0V VDS = 0V VG2S = –4V IG2SS VG1S = 0V VDS = 0V VDS = 5V IDSS VG1S = 0V VG2S = 0V VDS = 5V VG1S (OFF) ID = 100µA VG2S = 0V VDS = 5V VG2S (OFF) ID = 100µA VG1S = 0V VDS = 5V ID = 10mA gm VG2S = 1.5V f = 1kHz VDS = 5V Ciss ID = 10mA VG2S = 1.5V Crss f = 1MHz VDS = 5V NF ID = 10mA VG2S = 1.5V Ga f = 800MHz (Ta = 25°C) Max. 100 Unit µA Gate 1 to source current –20 µA Gate 2 to source current –20 µA Drain saturation current 20 55 mA Gate 1 to source cut-off voltage –1 –4 V Gate 2 to source cut-off voltage –1 –4 V Forward transfer admittance Input capacitance Feedback capacitance Noise figure Associated gain ∗ IDSS classification Product name classification 3SK165A-0 3SK165A-1 15 22 0.5 7.5 1.2 1.0 25 2.5 ms pF fF dB dB 16 20 IDSS RANK 20 to 55mA 20 to 35mA Typical Characteristics (Ta = 25°C) ID vs. VDS 50 (VG2S = 1.5V) 40 VG1S = 0V –0.2V 30 –0.4V –0.6V 20 –0.8V –1.0V 10 –1.2V –1.4V –1.6V –1.8V 0 2 4 6 VDS – Drain to source voltage [V] 8 40 50 (VDS = 5V) VG2S = 1.5V 1.0V 0.5V 30 0V 20 –0.5V –1.0V –1.5V 0 –2.0 –1.5 –1.0 –0.5 VG1S – Gate 1 to source voltage [V] 0 ID vs. VG1S ID – Drain current [mA] ID – Drain current [mA] 10 0 –2– 3SK165A ID vs. VG2S 50 (VDS = 5V) 40 50 (VDS = 5V) gm vs. VG1S gm – Forward transfer admittance [ms] 40 VG2S = 1.5V ID – Drain current [mA] 30 20 VG1S = 0V –0.2V –0.4V –0.6V –0.8V –1.0V –1.2V –1.4V 30 20 1.0V 0.5V 0V –0.5V –1.0V –1.5 –1.0 –0.5 VG1S – Gate 1 to source voltage [V] 0 10 10 0 –2.0 –1.5 –1.0 –0.5 VG2S – Gate 2 to source voltage [V] 0 0 –2.0 NF vs. VG1S 6 (VDS = 5V, f = 800MHz) 5 VG2S = 0.5V 25 30 Ga vs. VG1S (VDS = 5V, f = 800MHz) NF – Noise figure [dB] VG2S = 1.5V Ga – Gain [dB] 4 20 1.0V 15 0.5V 10 3 1.0V 1.5V 2 1 5 0 –2.0 –1.8 –1.6 –1.4–1.2 –1.0–0.8 –0.6 –0.4–0.2 0 0.2 VG1S – Gate 1 to source voltage [V] 0 –2.0–1.8 –1.6 –1.4–1.2–1.0–0.8 –0.6 –0.4–0.2 0 0.2 VG1S – Gate 1 to source voltage [V] NF, Ga vs. ID 3.0 (VDS = 5V, VG2S = 1.5V, f = 800MHz) 2.5 25 Ga 30 3.0 NF, Ga vs. f 40 (VDS = 5V, VG2S = 1.5V, ID = 10mA) NFmin – Minimum noise figure [dB] 2.5 35 NF – Noise figure [dB] Ga – Gain [dB] Ga 1.5 NF 1.0 15 1.5 25 10 1.0 NFmin 20 0.5 5 0.5 15 0 0 2 4 6 8 10 12 14 16 18 20 22 ID – Drain current [mA] 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 f – Frequency [GHz] 10 –3– Ga – Gain [dB] 2.0 20 2.0 30 3SK165A S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 S11 MAG 0.999 0.998 0.991 0.984 0.980 0.970 0.964 0.956 0.949 0.938 0.927 0.911 0.898 0.882 0.868 0.856 0.838 0.824 0.809 0.792 ANG –1.8 –3.7 –5.7 –7.8 –10.0 –12.2 –14.1 –16.1 –17.9 –19.7 –21.3 –22.8 –24.4 –25.8 –27.4 –29.0 –30.2 –31.5 –32.9 –34.1 MAG 2.110 2.105 2.097 2.094 2.083 2.070 2.058 2.048 2.039 2.021 2.008 1.990 1.973 1.954 1.941 1.928 1.901 1.888 1.865 1.846 S21 ANG 176.7 173.0 169.7 166.4 162.7 159.5 156.1 152.8 149.4 146.0 142.8 139.6 136.3 133.3 130.0 126.8 123.7 120.6 117.3 114.1 MAG 0.001 0.002 0.004 0.004 0.005 0.006 0.007 0.007 0.008 0.008 0.009 0.010 0.011 0.011 0.011 0.011 0.012 0.012 0.013 0.013 S12 ANG 73.3 91.6 80.5 85.0 84.9 84.7 83.2 82.5 82.0 78.1 84.4 76.7 77.8 80.9 80.0 80.5 74.3 79.2 80.6 79.5 MAG 0.970 0.968 0.965 0.963 0.961 0.958 0.958 0.958 0.958 0.958 0.954 0.953 0.950 0.949 0.947 0.947 0.946 0.945 0.942 0.941 (Z0 = 50Ω) S22 ANG –0.7 –1.6 –2.4 –3.2 –4.2 –4.9 –5.8 –6.7 –7.3 –8.3 –9.0 –9.6 –10.5 –11.2 –12.1 –12.9 –13.9 –14.5 –15.3 –15.9 Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 NFmin (dB) 0.72 0.75 0.81 0.84 0.90 0.94 0.98 1.02 1.07 1.13 1.17 1.22 1.26 1.31 1.38 1.42 1.48 1.52 1.57 Gamma Optimum ANG 0.97 0.95 0.93 0.91 0.88 0.86 0.84 0.83 0.81 0.80 0.79 0.78 0.78 0.77 0.77 0.77 0.76 0.76 0.75 MAG 4.4 6.4 8.2 9.9 11.4 12.8 14.2 15.5 16.7 17.9 19.1 20.3 21.5 22.8 24.2 25.6 27.1 28.8 30.6 Rn (Ω) 63.7 63.0 62.2 61.5 60.7 59.9 59.1 58.4 57.6 56.8 56.0 55.2 54.3 53.5 52.7 51.9 51.0 50.2 49.3 –4– 3SK165A Package Outline Unit: mm M-254 2.9 ± 0.2 1.9 ( 0.95 ) ( 0.95 ) + 0.2 1.1 – 0.1 3 2 0.6 + 0.2 1.6 – 0.1 2.8 ± 0.2 0 to 0.1 4 + 0.1 0.4 – 0.05 ( 0.95 ) 1.8 1 + 0.1 0.6 – 0.05 ( 0.85 ) + 0.1 0.10 – 0.01 1. Source 2. Gate1 3. Gate2 4. Drain SONY CODE EIAJ CODE JEDEC CODE M-254 PACKAGE MASS 0.01g –5–