CXA2525AM

CXA2525AM/AN RF Amplifier for CD Player and CD-ROM For the availability of this product, please contact the sales office. Description The CXA2525AM/AN is an IC for RF signal processing of CD player and CD-ROM. Features • Wide-band RF amplifier. (RF signal fc ≥ 12MHz) • RF equalizer (T type) • EFM time constant can be adjusted (with switching function) • APC (Automatic Power Control) function • Power saving function Functions • RF summing amplifier • RF equalizer • Focus error amplifier • Tracking error amplifier • APC circuit CXA2525AM 20 pin SOP (Plastic) CXA2525AN 20 pin SSOP (Plastic) Absolute Maximum Ratings • Supply voltage VCC • Storage temperature Tstg • Allowable power dissipation PD 7 V –65 to +150 °C 500 mW Operating Conditions • Supply voltage VCC – GND +3.0 to +5.5 V • Operating temperature Topr –20 to +75 °C Applications • CD players • CD-ROM drives Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E96318C8Z CXA2525AM/AN Block Diagram LD 1 1.25V 10k 10k 55k 56k VC BUFFER APC 10k 56k 1k 25 VCC 40k 20 APC_ON PD 2 40k 19 MODE A3 VCC B4 10k 10k 10k C5 10k RF Summing Amp D6 64k GND 7 64k 64k 64k E8 Focus Error Amp 11p 5p Tracking Error Amp 73.4k 320k VC 348k 348k RF Drive Amp 10k Standby BGR 2k VCC 18 VCC 17 RF_M 16 BPF_SW VC 15 LPF_SW 14 RFO_1 174k 112k 13 RFO_2 F9 44k 12 FE VC 10 VC 44k 112k VC Tracking Drive Amp 11 TE –2– CXA2525AM/AN Pin Description Pin No. Symbol I/O Equivalent circuit Description 10k 1 LD O 1k 1 APC amplifier output. 2 PD I 2 8k 55k APC amplifier input. 10k 124 3 10k 10k 10k 10k 10k 124 3 4 5 6 A B C D I I I I 4 64k 64k 348k Input of RF summing amplifier and focus error amplifier. 124 5 64k 64k 348k 124 6 7 GND Ground. –3– CXA2525AM/AN Pin No. Symbol I/O Equivalent circuit Description 112k 124 44k 8 44k 112k 124 9 8 9 11 E F TE I I O 124 11 320k 73.4k Tracking error amplifier input for Pins 8 and 9; tracking error drive output for Pin 11. 120 25 10 10 VC O 120 (VCC + GND) / 2 DC voltage output. 348k 12 FE O 348k 124 12 Focus error amplifier output for Pin 12. 13 RFO_2 O 124 14 13 Buffer switch output which sets the RF signal time constant. OFF when Pin 19 is connected to VCC, ON when it is connected to GND. 1k 14 17 RFO_1 RF_M O I 124 17 2k 14 Non-inversion input of RF drive amplifier for Pin 17; RF signal output for Pin 14; resistance value connected between Pins 14 and 17 which determines the low frequency gain of RF drive amplifier. –4– CXA2525AM/AN Pin No. Symbol I/O Equivalent circuit Description 124 15 15 LPF_SW O 124 17 Transistor switch output which sets the LPF cut-off frequency of RF amplifier. OFF when Pin 19 is connected to VCC, ON when it is connected to GND. 124 16 16 BPF_SW O VC Transistor switch output which sets the RF amplifier BPF boost. OFF when Pin 19 is connected to VCC, ON when it is connected to GND. 18 VCC VCC. 50k 124 19 MODE I 19 50k 30k Multiple-speed mode switching input. VCC : High multiple-speed mode GND: Low multiple-speed mode 20 APC_ON I 20 100k APC amplifier ON/OFF switching. OFF when connecting to VCC; ON when connecting to GND. –5– Electrical Characteristics SW conditions Bias conditions E1 0V 300mV 300mV 0V –2.0V O 2.0V –2.0V –2.0V 2.0V –2.0V 300mV –300mV 0V 12 2.0V 14 13 14 V1 = 100mVpp, f = 12MHz Difference for G1-1 V1 = 100mVpp, f = 4MHz Difference for G1-2 DC voltage measurement DC voltage measurement DC voltage measurement V1 = 100mVpp, f = 1kHz O V1 = 100mVpp, f = 1kHz G2-1 to G2-2 V1 = 100mVpp, f = 20kHz Difference for G2-1 O O 300mV 300mV V1 = 100mVpp, f = 20kHz Difference for G2-2 DC voltage measurement DC voltage measurement 13 V1 = 100mVpp, f = 100kHz 14 V1 = 100mVpp, f = 100kHz 16.5 16.5 –3 –3 1.3 — –50 17.7 17.7 –3 –4 –4 1.9 — 14 V1 = 100mVpp, f = 100kHz 16.5 O O O O O O 13 Pin DC current measurement –50 100 20 20 20.3 — — 2.3 –1.3 0 20.7 20.7 0 — — 2.4 –2.3 –2.0V 14 Pin DC current measurement –50 –10 2.0V 18 Pin DC current measurement — 1.8 3 120 300 23 23 23.3 — — — –0.3 50 23.7 23.7 3 — — — –1.9 7 Pin DC current measurement –12 –7.4 — 300mV 2.0V –2.0V 18 Pin DC current measurement — 7.4 12 mA mA mA mV mV dB dB dB dB dB V V mV dB dB dB dB dB V V E2 E3 E4 Min. Typ. Max. Unit (Ta = 25°C, VCC = 2.5V, GND = VC, VEE = –2.5V) Measurement No. Measurement item Symbol S1 S2 S3 S4 MeasureDescription of output waveform ment and measurement method point 1 Current consumption ICC 2 Current consumption IEE 3 Standby current Istb 4 Offset voltage V1-1 5 Offset voltage V1-2 6 Voltage gain G1-1 O 7 Voltage gain G1-2 O 8 Voltage gain G1-3 O RF amplifier 9 Frequency response F1-1 O 10 Frequency response F1-2 O 18 FE amplifier –6– 11 Maximum output amplitude H V1-2 O 12 Maximum output amplitude L V1-3 O 13 Offset voltage V2-1 14 Voltage gain 1 G2-1 O 15 Voltage gain 2 G2-2 16 Voltage gain difference G2-3 17 Frequency response 1 F2-1 O Frequency response 2 F2-2 19 Maximum output amplitude H V2-2 CXA2525AM/AN 20 Maximum output amplitude L V2-3 O Measurement No. Measurement item E1 0V 0V V1 = 100mVpp, f = 1kHz O V1 = 100mVpp, f = 1kHz G3-1 to G3-2 O –2.0V –4 –4 –3 –3 1.9 — — DC voltage measurement DC voltage measurement 2.0V –2.0V 10 DC voltage measurement I1 = 0.8mADC, DC voltage measurement DC voltage measurement –1.2 0.8 1.8 — –0.1 O O 2.0V O O 300mV O 300mV 0V 69mV 123mV 177mV 0V 1 V1 = 100mVpp, f = 200kHz Difference for G3-1 V1 = 100mVpp, f = 200kHz Difference for G3-2 DC voltage measurement DC voltage measurement DC voltage measurement –2.0V V1 = 100mVpp, f = 20kHz Difference for G3-2 V1 = 100mVpp, f = 20kHz Difference for G3-1 — — — — — — –1.6 0.1 2.1 2.45 — — –3 0 17.9 20.9 23.9 3 — — — — — –1.9 –0.1 1.6 — — 0 0.1 17.9 23.9 20.9 dB dB dB dB dB dB dB V V V V V V V V –2.0V DC voltage measurement –50 50 11 O 2.0V 0 mV E2 E3 E4 Min. Typ. Max. Unit Symbol SW conditions Bias conditions S1 S2 S3 S4 MeasureDescription of output waveform ment and measurement method point 21 Offset voltage V3-1 22 Voltage gain 1 G3-1 23 Voltage gain 2 G3-2 24 Voltage gain difference G3-3 25 Frequency response 1 F3-1 26 Frequency response 2 F3-2 TE amplifier 27 Frequency response 3 F3-3 28 Frequency response 4 F3-4 APC VC –7– 29 Maximum output amplitude H V3-2 30 Maximum output amplitude L V3-3 31 Offset voltage 1 V4-1 32 Offset voltage 2 V4-2 33 Offset voltage 3 V4-3 34 Offset voltage 4 V4-4 35 Offset voltage 5 V4-5 36 Offset voltage V5-1 CXA2525AM/AN Electrical Characteristics Measurement Circuit I1 1.25V VCC 20 E4 MODE E3 VCC 10k 1k 25 40k 19 10k VC BUFFER 40k APC VCC 18 VCC Standby RF_M 10k 2k 16 RF Summing Amp 348k 64k 64k 64k 64k Focus Error Amp 13 11p 5p Tracking Error Amp 73.4k 320k TE 11 112k Tracking Drive Amp 10k 12 FE 10k 348k RF Drive Amp RFO_1 14 10k RFO_2 10k 15 1p 3.9k 150p LPF_SW 510 BGR 17 1k BPF_SW 10k 10k 10k 10k 10k 56k 55k 56k APC_ON VCC LD 1 E2 VEE PD 2 A 3 B 4 S1 C 5 –8– 174k 112k 44k 44k S2 D 6 VEE GND 7 S3 E 8 S4 F 9 VCC V1 33µ VC 10 E1 3µ CXA2525AM/AN VEE Application Circuit (Double-/sextuple-speed switching) VCC 22 1.25V VCC 20 10k 1k 25 40k MODE VC BUFFER 40k APC VCC 18 VCC 10k 10k 10k 2k 16 RF Summing Amp 348k 64k 64k 64k 64k Focus Error Amp 13 11p 112k 44k Tracking Error Amp 73.4k 320k TE VC 112k Tracking Drive Amp 11 5p 12 FE 30k VC Focus Error Out VC RFO_2 4700p RF Out 14 1000p 348k RF Drive Amp RFO_1 VC 68p LPF_SW 15 3.9k 1p 390 10k 10k BGR 17 13p BPF_SW 1k Standby RF_M VCC 10k 56k 19 MODE 10k 55k 56k APC_ON 100µ LD 1 10µ 100 PD 2 1µ 500 A A IN 3 B B IN 4 C C IN 5 –9– 174k VC 44k D D IN 6 GND 7 E IN E 8 F IN F 9 VC VC 10 Tracking Error Out CXA2525AM/AN Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same. CXA2525AM/AN Note on Operation The RF AC maximum output amplitude is 1.3 Vpp when Pin 13 and 14 are capacitor-coupled shown in Application Circuit. Description of Operation RF Amplifier The signal currents from the photodiodes A, B, C and D are I-V converted, and input to Pins 3, 4, 5 and 6. These signals are added at the RF summing amplifier and inverted at the RF drive amplifier and then output to Pin 14. 390 68p 1k RF_ M A I-V 13p BPF_SW 16 3.9k 4.9k 14 1p RFO 15 LPF_SW 10k 3 4 5 6 10k 10k 10k 17 10k 2k VC VC RF Summing Amp B I-V I-V C D I-V RF Drive Amp The low frequency component of RFO output voltage is as follows: VRFO = 10k 4.9k × × (A + B + C + D) 10k 2k = 2.45 × (A + B + C + D) Focus Error Amplifier The operation of (B + D) – (A + C) is performed and the resulting signal is output to Pin 12. 15P 348k I-V A B C D 64k 3 4 5 6 64k 64k 64k 174k VC 15P 348k FE 12 Focus Error Amp I-V I-V I-V The low frequency component of FE output voltage is as follows: VFE = 348k × (B + D – A – C) 64k = 5.43 × (B + D – A + C) – 10 – CXA2525AM/AN Tracking Error Amplifier Each signal current from the photodiodes E and F is I-V converted and input to Pins 8 and 9. These signals undergo operational amplification at the tracking error amplifier and tracking drive amplifier, and are output to Pin 12. 11P VC 5P 112k E I-V 320k 73.4k TE VC 8 44k F 12 I-V 9 44k 112k The low frequency component of TE output voltage is as follows: VTE = 112k 320k × × (F – E) 44k 73.4k = 11.1 × (F – E) Center Voltage Generation Circuit The center voltage of VR = (VCC + GND) is supplied. The maximum current is approximately ±3mA. Vcc Vcc 40k Vc Buffer 40k 25 VR 10 VC APC Circuit When the laser diode is driven with constant current, the optical output possesses large negative temperature characteristics. Therefore, the current must be controlled with the monitor photodiode to ensure the output remains constant. When APC_ON pin is connected to GND, APC is ON; connected to VCC, it is OFF. VCC 100µ 56k PD 2 55k 10k 10k 1.25V 10k 56k 1µ 10µH 100 500 1k LD 1 22 – 11 – CXA2525AM/AN Example of Representative Characteristics RFO_1 Frequency Response (W/O EQ) 30 30 RFO_2 Frequency Response (W/O EQ) 20 20 GAIN [dB] 10 GAIN [dB] 10 0 100k 1M FREQ. [Hz] 10M 100M 0 100k 1M FREQ. [Hz] 10M 100M RF_Out Frequency Response (T-EQ)∗ 30 30 TE_Out Frequency Response 20 20 GAIN [dB] 10 MODE = LOW MODE = HIGH 0 100k GAIN [dB] 10 MODE = LOW MODE = HIGH 0 1M FREQ. [Hz] 10M 100M 1k 10k FREQ. [Hz] 100k 1M ∗T-EQ As shown in Application Circuit FE_Out Frequency Response 30 2.5 2.0 1.5 20 APC Characteristics GAIN [dB] 1.0 LD [V] 10 0 100 1k FREQ. [Hz] 10k 100k 0.5 0 –0.5 –1.0 –1.5 –2.0 0 100 PD [mV] 200 300 – 12 – CXA2525AM/AN Package Outline CXA2525AM Unit: mm 20PIN SOP (PLASTIC) 300mil + 0.4 12.45 – 0.1 20 11 + 0.4 1.85 – 0.15 0.15 + 0.3 5.3 – 0.1 7.9 ± 0.4 + 0.2 0.1 – 0.05 0.45 ± 0.1 1.27 + 0.1 0.2 – 0.05 ± 0.12 M PACKAGE STRUCTURE PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE SOP-20P-L01 ∗SOP020-P-0300-A LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT EPOXY / PHENOL RESIN SOLDER PLATING COPPER ALLOY 0.3g CXA2525AN ∗6.5 ± 0.1 20PIN SSOP (PLASTIC) + 0.2 1.25 – 0.1 0.1 20 11 A ∗4.4 ± 0.1 1 + 0.1 0.22 – 0.05 10 0.65 ± 0.12 + 0.05 0.15 – 0.02 0.1 ± 0.1 0° to 10° DETAIL A NOTE: Dimension “∗” does not include mold protrusion. PACKAGE STRUCTURE PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE SSOP-20P-L01 SSOP020-P-0044 LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT EPOXY RESIN SOLDER / PALLADIUM PLATING COPPER / 42 ALLOY 0.1g NOTE : PALLADIUM PLATING This product uses S-PdPPF (Sony Spec.-Palladium Pre-Plated Lead Frame). – 13 – 0.5 ± 0.2 6.4 ± 0.2 0.5 ± 0.2 1 10 6.9