CXA2556Q

CXA2556Q RF Amplifier for CD Player/CD-ROM For the availability of this product, please contact the sales office. Description The CXA2556Q is an IC for RF signal processing of CD player and CD-ROM. Features • Wide-band RF AC amplifier (RF AC signal fc ≥ 20MHz) • 4-mode RF equalizer (active filter type) • RF equalizer boost amount and cut-off frequency adjustable • EFM time constant adjustable (switching function provided) • Peak hold time constant of mirror circuit adjustable • Tracking error amplifier cut-off frequency adjustable • Tracking error amplifier voltage gain adjustable • APC (Automatic Power Control) function • APC ON/OFF control Absolute Maximum Ratings • Supply voltage VCC • Storage temperature Tstg • Power consumption PD 32 pin QFP (Plastic) Applications • CD players • CD-ROM drives Functions • RF summing amplifier • RF equalizer • Focus error amplifier • Tracking error amplifier • Mirror detection function • APC circuit 7 –65 to +150 800 V °C mW Operating Conditions • Supply voltage VCC – GND 3.0 to 5.5 V • Operating temperature Topr –20 to +75 °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E96731B76 CXA2556Q Block Diagram SUM OUT APC ON 25 BST C EQ IN 32 31 RFI RF C RFO 30 29 28 27 26 VCA BOOST FILTER CONTROL CONTROL CONTROL LD 1 LPF DELAY MIXER PD 2 HPF VS 44k 39k A 3 18k VC B 4 10p 44p HOLD PEAK /BOT 80k 22 RFO 1 80k 80k 1.3V 22k 51k VCC Open only for L/L mode VC 40k 55k 1.25V 20k 40k VCA 40k GND 7 40k 10k 32k 18 CP 32k GND NC 8 VCA 73.34k 320k 2p 9 10 11 12 13 14 15 16 VC 32k 164k 27p 174k 17 MIRR T 32k 40k VC 87k 27p 19 MIRR 20k VCC 40k VS VC VCC 20 VCC 21 RFO 2 BOOST VC 80k VCC LPF VCA Vcc 20k 23 MODE 2 MODE SW 24 MODE 1 APC ON 56k 10k 1.25V 10k VC 10k VC C 5 1k VC 56k D 6 40k 40k TE C FE B TE1 FE E FC C –2– VC TE F CXA2556Q Pin Description Pin No. Symbol I/O Equivalent circuit Description 10k 1 LD O 1 855 APC amplifier output. 2 PD I 2 8k 10k 55k APC amplifier input. 147 3 40k 40k 40k 40k 10k 147 32k 3 4 5 6 A B C D I I I I 4 32k Input of RF summing amplifier and focus error amplifier. 174k 164k 147 5 32k 147 6 32k 7 GND Ground. 147 9 147 10 9 10 11 12 13 E F TE1 TE C TE I I O I O 147 147 13 VCA 36.7k 147 12 160k 11 Tracking error amplifier input for Pins 9 and 10; tracking error amplifier output for Pin 11; tracking error amplifier lowfrequency gain setting for Pin 12; tracking error amplifier output for Pin 13. –3– CXA2556Q Pin No. 8 Symbol NC I/O Equivalent circuit Description Not connected. 147 14 164k 14 15 FE B FE O O 174k 147 15 Focus bias adjustment for Pin 14; focus error amplifier output for Pin 15. 120 16 VC O 120 16 (Vcc + GND)/2 DC voltage output. VCC 10k 17 MIRR T I 147 17 120k 80k Peak hold time constant adjustment. 10k 1.5k 80k 147 18 CP I Connects a mirror hold capacitor. Non-inverted input of mirror comparator. 18 20k 19 MIRR O 40k 147 19 Mirror comparator output. 100k –4– CXA2556Q Pin No. 20 Symbol VCC I/O Equivalent circuit Description Power supply. 3k 147 21 21 22 RFO 2 RFO 1 O O 147 22 Buffer switch output for the RF time constant setting for Pin 21. ON when Pins 23 and 24 are connected to GND. RF equalizer output. Double-speed mode switching input. 23 MODE 2 I 147 23 40k 10k Mode 1 ×1 ×N × 1.5N × 2.0N GND VCC GND VCC Mode 2 GND GND VCC VCC 24 MODE 1 I 147 24 10k 40k N is varied according to the external resistor connected to Pin 26. 25 APC ON I 147 25 100k Switching pin for APC amplifier ON/OFF. OFF when connected to Vcc; ON when connected to GND. 5k 5k 5k 147 26 26 FC C I Input to set the RF equalizer LPF cut-off frequency. –5– CXA2556Q Pin No. Symbol I/O Equivalent circuit Description 27 5k 27 BST C I Sets the high-frequency boost amount of RF equalizer. 28 RF C I 28 10k 147 Sets the low-frequency gain of RF amplifier and RF equalizer. 430 147 29 EQ IN I 29 10k 2k RF equalizer input. 10k 30 SUM OUT 20k O 20k 147 30 RF summing amplifier output inversion. 39k 31 RFI I 147 18k 31 44k Mirror circuit input. The RF summing amplifier output is input. –6– CXA2556Q Pin No. Symbol I/O Equivalent circuit Description 15k 147 32 32 RFO O 15k RF signal output. Eye pattern check point. –7– Electrical Characteristics SW conditions E1 E2 0.3V DC current measurement 21.5 33 7 32 DC current measurement –65 16 V1 = 100mVp-p f = 100kHz 32 0V 20 46.5 E3 0V Measurement point Min. Typ. Max. Unit mA Bias conditions (Ta = 25°C, VCC = 2.5V, GND = Vc, VEE = –2.5V) No. B B Measurement item Symbol S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 Description of output waveform and measurement method 1 Current consumption ICC 2 Current consumption IEE DC current measurement –46.5 –33 –21.5 mA 100 19 275 22 mV dB 5 Offset voltage V1-1 6 Voltage gain G1-1 O O 7 VCA gain 1 G1-2 O O C 32 V1 = 100mVp-p, f = 100kHz –11.5 Difference for G1-1 V1 = 100mVp-p, f = 1kHz Difference for G1-1 V1 = 100mVp-p, f = 10MHz Difference for G1-1 4.5 –8 –4.5 dB RF amplifier 8 VCA gain 2 G1-3 O O A 32 8 11.5 dB 9 300mV –300mV 0V 32 32 15 15 Frequency response F1-1 O O B 32 –3 — DC voltage measurement 1.75 2.25 DC voltage measurement DC voltage measurement V1 = 100mVp-p f = 1kHz — –60 — — –1.6 –0.95 0 60 17.5 20.5 23.5 dB V V mV dB FE amplifier –8– 300mV 300mV 10 Maximum output amplitude H V1-2 O O 11 Maximum output amplitude L V1-3 O O 12 Offset voltage V2-1 13 Voltage gain 1 G2-1 O 14 Voltage gain 2 G2-2 O 15 15 15 V1 = 100mVp-p f = 1kHz G2-1 – G2-2 V1 = 100mVp-p, f = 20kHz Difference for G2-1 15 15 15 V1 = 100mVp-p, f = 20kHz Difference for G2-2 DC voltage measurement DC voltage measurement 17.5 20.5 23.5 –2.5 –3 0 — 2.5 — dB dB dB 15 Voltage gain difference G2-3 16 Frequency response 1 F2-1 O 17 Frequency response 2 F2-2 O –3 1.9 — — 2.4 — — –2.3 –1.7 dB V V CXA2556Q 18 Maximum output amplitude H V2-2 O 19 Maximum output amplitude L V2-3 O SW conditions E1 0V 0.3V DC voltage measurement 30 20.9 — V1 = 100mVp-p f = 1kHz — V1 = 100mVp-p f = 1kHz — –2.0 G3-1 – G3-2 20.9 0 –60 150 13 0V 13 mV dB E2 E3 Measurement point Min. Typ. Max. Unit Bias conditions No. B O B Measurement item Symbol S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 Description of output waveform and measurement method 20 Offset voltage V3-1 21 Voltage gain 1 G3-1 22 13 O C A B 13 13 O O 13 Voltage gain 2 G3-2 O 13 — 2.0 dB dB dB dB 23 Voltage gain difference G3-3 24 VCA gain 1 G3-4 V1 = 100mVp-p, f = 1kHz 11.9 14.9 17.9 V1 = 100mVp-p, f = 1kHz 23.9 26.9 29.9 V1 = 100mVp-p, f = 20kHz Difference for G3-1 V1 = 100mVp-p, f = 20kHz Difference for G3-2 V1 = 100mVp-p, f = 180kHz Difference for G3-1 –3 — — 25 VCA gain 2 G3-5 TE amplifier 26 Frequency response 1 F3-1 dB 27 Frequency response 2 F3-2 O 13 –3 — — dB –9– O O O O O O 300mV 300mV O O 28 Frequency response 3 F3-3 13 –3 — — dB 29 Frequency response 4 F3-4 13 13 13 V1 = 100mVp-p, f = 180kHz Difference for G3-2 DC voltage measurement DC voltage measurement –3 1.9 — — 2.4 — — –2.2 –1.7 dB V V 30 Maximum output amplitude H V3-2 31 Maximum output amplitude L V3-3 CXA2556Q SW conditions E1 0V 0.3V 0.25 0.75 1.15 0.25 V1 = 25mVp-p, f = 100kHz V1 = 25mVp-p, f = 100kHz Difference for G4-1 4.5 V1 = 100mVp-p, f = 2MHz Difference for G4-1 V1 = 100mVp-p, f = 1MHz Difference for G1-1 V1 = 100mVp-p, f = 10MHz Difference for G4-1 V1 = 100mVp-p, f = 15MHz Difference for G4-1 22 22 300mV –300mV 0V O O O O O O O O O O –400mV –400mV –200mV –400mV –400mV –400mV –400mV –400mV 1.0V 0V 22 22 22 19 19 19 19 19 19 19 19 V1 = 100mVp-p, f = 20MHz Difference for G4-1 V4-3 – V4-1 V4-1 – V4-4 HPF = 400Hz, LPF = 200kHz V1 = 0.8Vp-p, f = 10kHz V1 = 0.8Vp-p, f = 10kHz V1 = 0.8Vp-p, 55% AM Mod. V1 = 800mVp-p V1 = 800mVp-p V1 = 800mVp-p f (V1) = 10kHz f (V1) = 10kHz 1.5 8 17 0.8 1.15 21 22 A 22 22 0V V V dB 10.5 dB E2 E3 Measurement point Min. Typ. Max. Unit Bias conditions No. B B Measurement item Symbol S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 Description of output waveform and measurement method 32 Offset voltage V4-1 33 Offset voltage V4-2 34 Voltage gain 1 G4-1 O O 22.5 26.5 35 VCA gain 1 G4-2 O O 36 22 Boost gain G4-3 O O O B 4 6.5 dB Equalizer 37 22 Frequency response 1 F4-1 O O –3 — — dB 38 22 Frequency response 2 F4-2 O O O O –3 — — dB 39 Frequency response 3 F4-3 O O O O –3 — — dB MIRR – 10 – O O O 40 Frequency response 4 F4-4 O O –3 — 0.45 0.85 0.45 — 1.8 — — — 40 250 0.35 — 0.9 — — — 400 550 — — — — — — — 6 — –2.2 600 900 — — — 1.8 dB V V mV V V Hz Hz kHz kHz Vp-p CXA2556Q Vp-p 41 Maximum output amplitude H V4-3 O O 42 Maximum output amplitude L V4-4 O O 43 Output noise VN 45 High level output voltage V5-1 46 Low level output voltage V5-2 47 Mirror hold frequency response F5-1 48 Bottom hold frequency response F5-2 49 Maximum operating frequency 1 F5-3 50 Maximum operating frequency 2 F5-4 51 Minimum input voltage V5-3 52 Maximum input voltage V5-4 SW conditions E1 E3 0V DC voltage measurement DC voltage measurement DC voltage measurement DC voltage measurement I1 = 0.8mADC DC voltage measurement DC voltage measurement — –0.1 1.8 2.4 –0.9 0 0.3 1.6 –1.2 –0.35 1.4 — — 0 0.1 — –1.6 –0.9 1 1 1 1 16 1 V V V V V V 0V 123mV 177mV O 0V 0.3V 0V 69mV E2 Measurement point Min. Typ. Max. Unit Bias conditions No. B B Measurement item Symbol S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13 Description of output waveform and measurement method 53 Output voltage 1 V6-1 54 Output voltage 2 V6-2 56 APC 55 Output voltage 3 V6-3 Output voltage 4 V6-4 57 Output voltage 5 V6-5 VC 58 Output voltage VC – 11 – CXA2556Q CXA2556Q Electrical Characteristics Measurement Circuit 20k 20k B VCC 2k VCC A S9 10k 32 31 30 29 C 5.1k S8 28 27 5.1k 26 S7 20k S13 VCC VEE 25 RF C RFI EQ IN FC C RFO I1 1 E2 LD SUM OUT BST C APC ON S10 VCC S12 24 S11 VCC VEE VCC VEE 10k MODE 1 VEE 2 PD MODE 2 23 1µ 3 S1 A RFO 1 22 1µ 10k 4 S2 5 B RFO 2 21 C VCC 20 VCC 6 D MIRR 19 0.033µ VEE 7 GND CP 18 E3 TE C TE1 FE B 8 NC MIRR T 17 TE E FE F VC VCC 9 S3 10k S4 V1 E1 44k 44k 20k 112k 112k A S6 C B VEE 20k 10k 10k 10 11 12 13 14 15 16 33µ 33µ VEE – 12 – CXA2556Q Application Circuit 10 100µ/6.3V 47k VC GND 10µH 1µ/6.3V 32 0.1µ 31 30 0.1µ 29 28 27 3.9k 6.8k 26 25 RF C RFI EQ IN FC C RFO SUM OUT BST C APC ON LD ON VCC 1 LD MODE 1 24 Mode 1 IN 2 500 100 PD MODE 2 23 1000p Mode 2 IN A IN 3 A RFO 1 22 4700p B IN 4 B RFO 2 21 VCC 33µ RF AC Out C IN 5 C VCC 20 0.1µ VC D IN 33µ 6 D MIRR 19 0.1µ Mirror Out 7 VC 0.1µ GND CP 18 TE C TE1 FE B 8 NC MIRR T 17 10k TE E 9 VC 62k 100k E IN F IN 47k ∗ 10 11 12 13 14 15 FE F 16 120k VC 47k 10k VC Tracking Error Out 3p ∗ Depending on actual applications an additional capacitor of 3pF may be added at pin (6). The purpose is to extend the cut-off frequency of TE to beyond 250kHz. Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same. – 13 – Focus Error Out VC CXA2556Q Description of Functions RF Block The RF signal processing is performed by this circuit. The output is separated to AC and DC. The AC is the capacitance-coupled input via the equalizer circuit and used for the EFM demodulation signal processing. The DC contains the DC component and is used for the mirror, defect and FOK signal processings. The VCA function is provided for both the AC and DC signal processing systems. Pin 28 is the control voltage input pin. (See the characteristics graphs on page 19 and page 20 for the gain and control voltage.) RF Equalizer Block Diagram is as shown below: EQ IN LPF1 DELAY FC C MIXER LPF2 LPF3 LPF4 VCA EQ OUT FC C HPF Boost FC C FC C RF C FC C BST C RF Equalizer The equalizer function is provided for the AC signal processing system for the EFM signal demodulation. The each filter is constructed in the Bessel type which has the little group delay difference. The cut-off frequency and boost amount can be set by the external resistors connected to Pins 26 and 27. (See the characteristics graphs on page 19 for the cut-off frequency and boost amount.) The transmittance for each filter is as follows: HPF: (KS2) / (S2 + 3.22597S + 2.94933) LPF1: (2.94933 ) / (S2 + 3.22597S + 2.94933) LPF2: (3.32507 ) / (S2 + 2.75939S + 3.32507) LPF3: (4.20534 ) / (S2 + 1.82061S + 4.20534) LPF4: (1.68536 ) / (S + 1.68536) – 14 – CXA2556Q RF Amplifier The signal currents from the photodiodes A, B, C and D are I-V converted and input to Pins 3, 4, 5 and 6. These signals are added by the RF summing amplifier, inverted by the RF drive amplifier and output to Pin 32. The VCA control voltage on Pin 28 is used for the gain adjustment. 47k Vc SUM OUT A I-V B I-V C 40k 3 4 5 40k 40k 40k Vc RF Summing Amp VCA 30 10k 28 RF C RFO 32 I-V D 6 I-V The low frequency component of the RFO output voltage is as follows: VRFO = 2.45 × (A + B + C + D) (RFC voltage = 1/2 VC) Focus Error Amplifier The operation of (B + D) – (A + C) is performed and the resulting signal is output to Pin 15. 27p 174k A I-V I-V I-V I-V B C D 32k 3 4 5 6 32k 32k 32k 164k 14 FE B VCC 47k 27p 87k Vc Focus Error Amp 15 FE The low frequency component of the FE output voltage is as follows: VFE = 174k × (B + D – A – C) 32k = 5.43 × (B + D – A – C) – 15 – CXA2556Q Tracking Error Amplifier The signal current from the photodiode F is I-V converted and input to Pin 10 via the input resistor. The signal current from the photodiode E is I-V converted and input to Pin 9 after its gain is adjusted by the volume. These signals undergo operational amplification at the tracking error amplifier, VCA and tracking drive amplifier and they are output to Pin 13. 14p Vc 62k 100k I-V 44k I-V 112k TE1 11 12 TE C Vc 47k E 73.4k VCA Vc 2p 320k 9 TE 13 F 10 The low frequency component of the TE output voltage is as follows: VTE = 112k 320k × × (F – E) 44k 73.4k (TE C voltage = 1/2 VC) = 11.1 × (F – E) – 16 – CXA2556Q Mirror Circuit The mirror circuit performs peak and bottom hold after RFI signal has been amplified. The peak hold is executed with the time constant which follows the traverse signal of 100kHz for L/L mode (either of Pins 23 or 24 is connected to GND) and maximum 700kHz (adjustable with the DC voltage on Pin 17) for L/H, H/L, H/H modes. The bottom hold is executed with the time constant which follows the rotation cycle envelope fluctuation. Mirr Hold Amp 80k G Vc Mirr Amp RFO Vc H I Peak & Bottom Hold Mode L/L 80k J 80k 80k 1.3V Mirr Dif Amp Mirr 20k Comparator K 18 CP Vc 0.33µ 3.125V 44k RFI 18k 31 Vc 39k 17 MIRR T 19 MIRR RFO 0V G (RFI) 0V H (PEAK HOLD) 0V I (BOTTOM HOLD) 0V J K (MIRROR HOLD) H MIRR L The mirror signal is output by comparing to the signal K (2/3 level of the J peak value which is peak-held with a large time constant) where the difference of hold signals H and I is obtained. The mirror output is low for tracks on the disc and high for the area between tracks (the mirror areas). In addition, a high signal is output when a defect is detected. The mirror hold time constant must be sufficiently large in comparison with the traverse signal. – 17 – CXA2556Q Center Voltage Generation Circuit The center voltage of VR = (Vcc + GND)/2 is supplied. The maximum current is approximately ±3mA. VCC VCC 40k Vc Buffer 40k 25 VR 16 Vc APC Circuit When the laser diode is driven by a constant current, the optical power output has extremely large negative temperature characteristics. The APC circuit is used to maintain the optical power output at a constant level. The laser diode current is controlled according to the monitor photodiode output. APC is ON by connecting APC_ON pin to GND; it is OFF by connecting the pin to Vcc. VCC PD 2 8k 56k 10k 1k 1 56k 100µ LD 10 10k 55k 10k 1.25V 10µ 100 500 1µ – 18 – CXA2556Q RF AC Characteristics Graphs (Pin 22) Frequency response Boost gain characteristics 28 1 VC 2 Rbst = 3.9kΩ RF C = 26 Rfc = 6.8kΩ L/L H/L L/H H/H 8 7 6 5 Rfc =6.8kΩ, 1 RF C = VC 2 Boost [dB] Gain [dB] 4 3 2 24 22 1 0 20 10–1 –1 100 Frequency [MHz] 101 0 5 10 Rbst [kΩ] 15 20 Cut-off frequency 25 Rbst = 0Ω, RF C = 20 H/H Mode 1 VC 2 35 VCA characteristics 30 Fc [MHz] 15 Gv [dB] 4 6 8 10 12 14 Rfc [kΩ] 16 18 20 25 20 10 15 5 10 0.8 1.0 1.2 1.4 RF C [V] 1.6 1.8 Notes) In the graphs above, Rfc: FC C (pin 26) external resistor value Rbst: BST C (pin 27) external resistor value ∗ To ensure stable operation, it is recommended to select Rfc value of 6.2kΩ and above, and Rbst of 10kΩ and below in all cases. – 19 – CXA2556Q RF DC Characteristics Graphs (Pin 32) Frequency response 25 RF C = 1 VC 2 30 28 26 24 VCA characteristics 20 Gain [dB] Gv [dB] 15 10 10–1 22 20 18 16 14 12 10 100 Frequency [MHz] 101 0.8 1.0 1.2 1.4 RF C [V] 1.6 1.8 TE Characteristics Graphs (Pin 13) Frequency response 25 TE C = H/L, L/H, H/H 20 1 VC 2 30 28 26 24 VCA characteristics Gain [dB] Gv [dB] 103 22 20 18 16 14 12 L/L 15 10 100 10 101 102 Frequency [kHz] 0.4 0.6 0.8 1.0 1.2 1.4 TE C [V] 1.6 1.8 2.0 FE frequency response (Pin 15) Frequency response 25 20 Gain [dB] 15 10 100 101 102 Frequency [kHz] 103 – 20 – CXA2556Q MIRROR Characteristics Graph (Pin 19) Maximum operating frequency vs. MIRR T pin voltage 600 550 500 450 Vin = –0.4VDC, 800mVp-p H/L, L/H, or H/H Mode fmax [kHz] 400 350 300 250 200 150 100 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 MIRR T [V] APC Characteristics Graph (Pin 1) LD voltage vs. PD voltage 5.0 4.5 4.0 3.5 LD [V] 3.0 2.5 2.0 1.5 1.0 0.5 80 100 120 140 PD [mV] 160 180 200 – 21 – CXA2556Q Package Outline Unit: mm 32PIN QFP (PLASTIC) 9.0 ± 0.2 + 0.3 7.0 – 0.1 24 17 + 0.35 1.5 – 0.15 0.1 25 16 32 9 + 0.2 0.1 – 0.1 1 0.8 + 0.15 0.3 – 0.1 8 + 0.1 0.127 – 0.05 0° to 10° ± 0.12 M PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE QFP-32P-L01 ∗QFP032-P-0707-A LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT EPOXY RESIN SOLDER PLATING 42 ALLOY 0.2g – 22 – 0.50 (8.0)