CXA2557R

CXA2557R RF Amplifier for CD Player/CD-ROM For the availability of this product, please contact the sales office. Description The CXA2557R is an RF signal processing IC for CD players, CD-ROM and CD-RW (playback). Features • Wide-band RF AC amplifier • Supports CD-RW playback (RF DC, RF AC, FE, TE and AL amplifiers) • 5-mode RF AC equalizer (active filter type) • RF AC equalizer boost amount and cut-off frequency adjustable • Voltage gain adjustable for RF DC, RF AC, FE, TE and AL amplifier • RF DC amplifier offset voltage switchable • FE and TE amplifier bias voltage adjustable • Tracking error amplifier cut-off frequency adjustable • Alignment amplifier • Center error amplifier • AGC (Automatic Gain Control) function • APC (Automatic Power Control) function • VC/VC IN separation • Supports laser coupler/3 spots Functions • RF DC summing amplifier • RF AC summing amplifier • RF AC equalizer • Focus error (FE) amplifier • Tracking error (TE) amplifier • Alignment (AL) amplifier • Center error (CE) amplifier • Mirror circuit • AGC circuit • VREF output Applications • CD players • CD-ROM drives 48 pin LQFP (Plastic) Structure Bipolar silicon monolithic IC Absolute Maximum Ratings (Ta = 25°C) • Supply voltage VCC – GND 7 V • Storage temperature Tstg –65 to +150 °C • Power consumption PD 400 mW Operating Conditions (Ta = 25°C) • Supply voltage VCC – GND 3.5 to 5.5 • Operating temperature Topr –20 to +75 V °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E97757-PS CXA2557R Block Diagram APC ON DC OFFSET RF SW DC RW SW DC RF DC SUM AMP RF DC AMP RF DC VCA VCA CNT RF AC SUM AMP RF DC OUT 48 RF AC OUT RW SW AC RW SW AC RW SW 1 RW SW 1 26 RF DC OUT 32 RW SW RW SW DC A3 B4 C5 D6 RW SW AC RF AC VCA VCA CNT FE AMP RW SW 1 E8 F9 FE VCA FE VCA CNT TE RW AMP FE BIAS 20 FE 19 FE BIAS 38 FE CNT TE AMP TE VCA TE BIAS 17 TE 18 TE BIAS TE MODE TE 1 10 AL IN 11 AL AMP RW SW 1 TE VCA CNT 39 TE CNT 40 AL CNT AL VCA AL DRV 12 AL 13 AL 1 RW SW 1 14 CE IN 15 CE 1 RF DC OUT CE AMP CE DRV 16 CE LPF 1 LPF 2 LPF 3 AMP HALF MIRR CNT 37 MIRR CNT PEAK HOLD ADJ COMP 25 MIRR 24 MIRR BIAS LPF 23 PH C PBH CNT 21 PBH CNT BOTTOM HOLD PEAK HOLD 1 PEAK HOLD 2 22 BH C 33 AGC SW HPF AMP COMP VCA CNT 41 VCA 46 HOLD C MODE 1 EQ IN 47 FC CNT 1 44 FC CNT 2 45 FC H CNT 43 MODE 1 34 MODE 2 35 BST CNT 42 BOOST CNT FC CNT LPF 1 DELAY MIXER LPF 2 LPF 3 LPF 4 AMP 29 RFO 1 30 RFO 2 HPF MODE CNT BOOST APC AMP 2 1 PD LD APC ON 36 APC ON 7 27 28 31 VC IN GND –2– VCC VC CXA2557R Pin Configuration APC ON MODE 2 MODE 1 AGC SW RW SW RFO 2 RFO 1 RF DC OUT 26 VC IN VCC 36 MIRR CNT 37 FE CNT 38 TE CNT 39 AL CNT 40 VCA 41 BST CNT 42 FC H CNT 43 FC CNT 1 44 FC CNT 2 45 HOLD C 46 EQ IN 47 RF AC OUT 48 35 34 33 32 31 VC 30 29 28 27 25 24 MIRR BIAS 23 PH C 22 BH C 21 PBH CNT 20 FE 19 FE BIAS 18 TE BIAS 17 TE MIRR 16 CE 15 CE 1 14 CE IN 13 AL 1 12 1 2 3 4 5 6 7 8 9 10 11 TE 1 –3– AL IN GND LD PD AL B C D E A F CXA2557R Pin Description Pin No. Symbol I/O Equivalent circuit Description 10k 1 LD O 1 124 APC amplifier output. 2 PD I 2 124 55k 20k 20k APC amplifier input. 3 40k 40k 40k 40k 40k 10k 45k 4 40k 40k 40k 3 4 5 6 A B C D I I I I 5 Inputs of RF summing amplifier and focus error amplifier. When using a laser coupler: A + C = PD1 B + D = PD2 130k 40k 40k 40k 40k 180k 180k 180k 180k 130k 130k 130k 6 7 GND — Ground. –4– CXA2557R Pin No. Symbol I/O Equivalent circuit Description 124 124 9 8 9 E F I I 8 Tracking error amplifier inputs. 124 VCA RW 10 10 TE 1 O Tracking error amplifier inverted output. 20k 124 11 AL IN I 11 20k 9k 40k 6.2k 13.3k Alignment amplifier input. 15k 124 12 15k 7.5k 12 AL O Alignment amplifier non-inverted output. 124 13 AL 1 O 45k 34k 13 Alignment amplifier inverted output. 14 CE IN I 14 124 124 15 Center error amplifier input. 15 CE 1 O 20k 124 16 Center error amplifier inverted output. 16 CE O Center error drive amplifier inverted output. –5– CXA2557R Pin No. Symbol I/O Equivalent circuit Description 17 TE O VCA 40k 124 17 Tracking error amplifier noninverted output. 50k 18 TE BIAS I 200k 18 Tracking error amplifier bias adjustment. 19 FE BIAS I VCA 300k 300k 124 20 107k 375k Focus error amplifier bias adjustment. 20 FE O 19 Focus error amplifier noninverted output. 21 PBH CNT I 50k 21 Mirror circuit peak hold and bottom hold time constant setting input. 22 BC C I 500 22 40k 20k Connects the capacitor that sets mirror circuit bottom hold time constant. 40k 23 PH C I 23 500 Connects the capacitor that sets mirror circuit peak hold time constant. 20k 24 MIRR BIAS I 35k 24 3k 50k 20k 2.7k Mirror circuit bias adjustment. –6– CXA2557R Pin No. Symbol I/O Equivalent circuit Description 8k 25 MIRR O 7.7k 200k 124 25 2k Mirror comparator output. 20k 26 RF DC OUT O 26 20k 20k RF DC amplifier output. Eye pattern check point. 27 VC IN I — Reference voltage input. 28 VC O 150 28 150 (VCC + GND)/2 voltage output. 29 RFO 1 O 3k 3k 3k 3k 29 RF AC amplifier output. 280 280 30 30 RFO 2 O RF AC amplifier buffer switch output. ON when Pin 34 is connected to GND. Power supply. 31 VCC — — –7– CXA2557R Pin No. Symbol I/O Equivalent circuit Description 15k 15k 40k 80k 20k 32 RW SW I 20k 20k 60k 124 32 CD-ROM/RW switching input. RW when connected to VCC, ROM when connected to GND. 15k 15k 40k 80k 33 AGC SW I 15k 15k 20k 60k 33 AGC/VCA switching input. AGC when connected to VCC, VCA when connected to GND. Double-speed mode switching pins. 124 34 15k 80k 40k 15k MODE 1 MODE 2 L M X L M H X fc ×n × 2n × 4n × 6n ×N 80k 15k 34 MODE 1 I H 40k 15k ∗ X = L or M or H n is determined by the external resistor connected to Pin 44. N is determined by the external resistor connected to Pin 45 and the Pin 43 input voltage. Pin 34 also serves as switching pin for the tracking error amplifier cut-off frequency and RFO2 output ON/OFF switching pin. MODE 1 MODE 2 20kHz L M H 250kHz fc ON OFF 80k 15k 40k 15k 80k 15k 35 MODE 2 I 35 40k 15k ∗ L = GND, M = VC, H = VCC –8– CXA2557R Pin No. Symbol I/O Equivalent circuit Description 124 36 100k 40k 10k 40k 36 APC ON I 80k Switching pin for RF DC amplifier offset setting. No addition to RF DC amplifier when Medium (VC). VCC/6 added to RF DC amplifier when Low (GND). 80k 40k 20k 10k 37 MIRR CNT I 37 12k 12k Mirror circuit LPF cut-off frequency setting input. 38 FE CNT I 38 21k 21k Focus error amplifier gain adjustment input. 39 39 TE CNT I 21k 21k Tracking error amplifier gain adjustment input. 40 AL CNT I 40 21k 21k Alignment amplifier gain adjustment input. –9– CXA2557R Pin No. Symbol I/O Equivalent circuit Description 80k 41 VCA I 41 80k 40k 26.7k 80k 40k RF DC and RF AC amplifier gain adjustment input. AGC circuit target voltage input when AGC SW is ON. 42 BST CNT 20k I 42 Equalizer circuit boost amount adjustment input. 43 FC H CNT I 20k 43 20k Cut-off frequency N adjustment input when Pin 34 is High. 5k 5k 5k 15k 44 FC CNT 1 124 I 44 Connects the external resistor that sets cut-off frequency n when Pin 34 is Low or Medium. 5k 5k 5k 15k 45 FE CNT 2 I 124 45 Connects the external resistor that sets cut-off frequency N when Pin 34 is High. 46 46 HOLD C I Connects the capacitor that sets AGC time constant. – 10 – CXA2557R Pin No. Symbol I/O Equivalent circuit Description 1.1k 1.1k 47 EQ IN I 47 5k 1.3k 5k Equalizer circuit input. 3k 3k 48 RF AC OUT O 48 RF AC summing amplifier noninverted output. – 11 – Electrical Characteristics Bias conditions (V) SW conditions E1 E2 Min. –20.0 43.0 –85.0 64.0 –64.0 0.0 20.0 85.0 –43.0 Typ. Max. 28 31 7 26 S16 S20-b 48 S16 20 S16 17 S16 12 S16 13 S16 16 S2, S3, S4, S5 S2, S3, S4, S5, S25 S2, S3, S4, S5, S25 S2, S3, S4, S5, S16 S2, S3, S4, S5, S16, S25 S2, S3, S4, S5, S16, S25 1.0 –1.0 1.0 –1.0 100kHz 18mVp-p 100kHz 80mVp-p 26 GRFDV1 (TS) – GRFD1 GRFDV2 (TS) – GRFD1 GRFD2 (TS) – GRFD1 GRFDV3 (TS) – GRFD2 (TS) GRFDV4 (Ta = 25°C, VCC = 1.9V, GND = VC, VEE = –1.9V) Input Output ∗IC pin No. Ratings Unit mA mA mA mV mV –68.0 52.0 –215.0 –135.0 –210.0 –130.0 –57.0 –60.0 –210.0 –210.0 –10.0 –10.0 –110.0 –110.0 –30.0 13.8 5.0 –11.0 10.0 5.0 (TS) – GRFD2 (TS) –11.0 23.0 20.0 –80.0 –80.0 50.0 50.0 –50.0 –50.0 20.0 16.8 8.0 –8.0 13.0 8.0 –8.0 172.0 –55.0 –50.0 103.0 100.0 50.0 50.0 110.0 110.0 10.0 10.0 70.0 19.8 11.0 –5.0 16.0 11.0 –5.0 mV mV mV mV mV mV mV mV mV mV mV mV dB dB dB dB dB CXA2557R No. Measurement item 1 Output voltage VVCB 2 Current consumption ICC 4 Current consump VC -tion 3 Current consumption IEE Output offset voltage 1 VRFD1 –680.0 –560.0 –440.0 –640.0 –520.0 –400.0 6 RF DC 5 Output offset voltage 2 VRFD2 Output offset voltage 3 VRFD3 7 Output offset voltage 1 VRFA1 10 FE 9 RF AC 8 Output offset voltage 2 VRFA2 Output offset voltage 1 VFE1 Output offset voltage 2 VFE2 12 Offset voltage 15 AL CE RF DC – 12 – TE 11 Output offset voltage 1 VTE1 Output offset voltage 2 VTE2 13 Output offset voltage 1 VAL1 14 Output offset voltage 2 VAL2 Output offset voltage 3 VAL3 16 Output offset voltage 4 VAL4 17 Output offset voltage VCE 18 Voltage gain 1 GRFD1 19 VCA gain 1 GRFDV1 20 VCA gain 2 GRFDV2 21 Voltage gain 2 GRFD2 22 VCA gain 3 GRFDV3 23 VCA gain 4 GRFDV4 dB (Ta = 25°C, VCC = 1.9V, GND = VC, VEE = –1.9V) Bias conditions (V) SW conditions E1 E2 Min. 990.0 — 48 0.7 VRFA1 (TS) – GRFA1 6.0 –10.0 8.1 5.5 –9.5 260.0 VRFA2 (TS) – GRFA1 100kHz 38mVp-p 1.0 –1.0 1.0V DC –1.0V DC 1kHz 189mVp-p 20 GRFA2 (TS) – GRFA1 VRFA3 (TS) – GRFA2 (TS) VRFA4 (TS) – GRFD2 (TS) 2.7 8.0 –8.0 10.1 7.5 –7.5 370.0 1100.0 — Typ. Max. 1.0V DC –1.0V DC 100kHz 170mVp-p 1.0 –1.0 26 S2, S3, S4, S5 S2, S3, S4, S5 S2, S3, S4, S5 S2, S3, S4, S5, S25 S2, S3, S4, S5, S25 S2, S3, S4, S5, S16 S2, S3, S4, S5, S16, S25 S2, S3, S4, S5, S16, S25 S2, S3, S4, S5 S2, S3, S4, S5 S2, S4 S3, S5 S3, S5, S22 S3, S5, S22 S3, S5 S2, S4, S16 S3, S5, S16 S3, S5, S16, S22 S3, S5, S16, S22 S11 S11 S3, S5 S3, S5 1.0 –1.0 1.9V DC –1.9V DC 1.0 –1.0 –1.0 25kHz 189mVp-p 1kHz 42mVp-p 1.0 GFEV1 (TS) – GFE2 GFEV2 (TS) – GFE2 FFE1 (TS) – GFE2 GFE3 (TS) – GFE1 GFE4 (TS) – GFE2 GFEV3 (TS) – GFE4 (TS) GFEV4 (TS) – GFE4 (TS) BFE1 (TS) – VFE1 BFE2 (TS) – VFE1 Input Output ∗IC pin No. Ratings Unit mV No. Measurement item 24 Output voltage High VRFDH RF DC 25 Output voltage Low VRFDL –1790.0 –1680.0 mV 4.7 10.0 –6.0 12.1 9.5 –5.5 480.0 dB dB dB dB dB dB mV 26 Voltage gain 1 GRFA1 27 VCA gain 1 VRFA1 28 VCA gain 2 VRFA2 29 Voltage gain 2 GRFA2 RF AC 30 VCA gain 3 VRFA3 31 VCA gain 4 VRFA4 32 Output voltage High VRFAH1 33 Output voltage Low VRFAL1 –730.0 –620.0 –510.0 13.0 13.0 5.0 –11.0 –3.0 10.0 10.0 5.0 –11.0 16.0 16.0 8.0 –8.0 — 13.0 13.0 8.0 –8.0 19.0 19.0 11.0 –5.0 — 16.0 16.0 11.0 –5.0 mV dB dB dB dB dB dB dB dB dB –1290.0 –1180.0 –1070.0 mV 1070.0 1180.0 1290.0 1660.0 1770.0 — — mV mV CXA2557R FE – 13 – 34 Voltage gain 1 GFE1 35 Voltage gain 2 GFE2 36 VCA gain 1 GFEV1 37 VCA gain 2 GFEV2 38 Frequency response FFE 39 Voltage gain 3 GFE3 40 Voltage gain 4 GFE4 41 VCA gain 3 GFEV3 42 VCA gain 4 GFEV4 43 Bias characteristics 1 BFE1 44 Bias characteristics 2 BFE2 45 Output voltage High VFEH 46 Output voltage Low VFEL –1680.0 –1570.0 mV (Ta = 25°C, VCC = 1.9V, GND = VC, VEE = –1.9V) Bias conditions (V) SW conditions E1 Min. 17.9 17.9 1.0 4.8 –12.1 –3.0 –3.0 10.0 10.0 4.9 –12.2 BTE1 (TS) – VTE1 BTE2 (TS) – VTE1 1.9V DC –1.9V DC 1kHz 700mVp-p 12 13 1.0 –1.0 30kHz 700mVp-p 12 13 1kHz 156mVp-p 12 13 1.0 –1.0 12 12 GALV1 (TS) – GAL1 GALV2 (TS) – GAL1 FAL1 (TS) – GAL1 FAL2 (TS) – GAL3 GAL3 (TS) – GAL1 GAL4 (TS) – GAL3 GALV3 (TS) – GAL3 (TS) GALV4 (TS) – GAL3 (TS) –1.0 250kHz 107mVp-p 20kHz 107mVp-p 1kHz 20mVp-p GTE3 (TS) – GTE1 GTE4 (TS) – GTE2 1.0 –1.0 1.0 –1.0 GTEV3 (TS) – GTE3 (TE) GTEV4 (TS) – GTE3 (TE) FTE2 (TS) – GTE1 (TE) FTE1 (TS) – GTE1 (TE) GTEV2 (TS) – GTE1 GTEV1 (TS) – GTE1 8.3 –8.6 — — 13.0 13.0 8.4 –8.7 20.9 20.9 Typ. S7, S18-c 1kHz 107mVp-p S6, S18-c S7, S18-c, S23 S7, S18-c, S23 S7, S18-c S7 S7, S16, S18-c S6, S16, S18-c S7, S16, S18-c, S23 S7, S16, S18-c, S23 S10, S18-c S10, S18-c S7, S18-c S7, S18-c S8 S8 S8, S24 S8, S24 S8 S8 S8, S16 S8, S16 S8, S16, S24 S8, S16, S24 17 E2 Max. 23.9 23.9 11.8 –5.1 — — 16.0 16.0 11.9 –5.2 –890.0 –780.0 –670.0 670.0 780.0 1550.0 1660.0 — –3.6 –3.6 4.3 –11.9 –2.0 –2.0 10.0 10.0 4.5 –11.9 890.0 — Input Output ∗IC pin No. Ratings Unit dB dB dB dB dB dB dB dB dB dB mV mV mV –1760.0 –1650.0 mV –0.6 –0.6 8.0 –8.4 — — 13.0 13.0 8.0 –8.4 2.4 2.4 11.5 –4.9 — — 16.0 16.0 11.5 –4.9 dB dB dB dB dB dB dB dB dB dB No. Measurement item 47 Voltage gain 1 GTE1 48 Voltage gain 2 GTE2 49 VCA gain 1 GTEV1 50 VCA gain 2 GTEV2 51 Frequency response 1 FTE1 52 Frequency response 2 FTE2 TE 53 Voltage gain 3 GTE3 54 Voltage gain 4 GTE4 55 VCA gain 3 GTEV3 56 VCA gain 4 GTEV4 66 AL – 14 – 57 Bias characteristics 1 BTE1 58 Bias characteristics 2 BTE2 59 Output voltage High VTEH1 60 Output voltage Low VTEL1 61 Voltage gain 1 GAL1 62 Voltage gain 2 GAL2 63 VCA gain 1 GALV1 64 VCA gain 2 GALV2 65 Frequency response 1 FAL1 Frequency response 2 FAL2 67 Voltage gain 3 GAL3 68 Voltage gain 4 GAL4 69 VCA gain 3 GALV3 CXA2557R 70 VCA gain 4 GALV4 (Ta = 25°C, VCC = 1.9V, GND = VC, VEE = –1.9V) Bias conditions (V) SW conditions E1 Min. 1580.0 1690.0 — 13 — — Typ. Max. S8 1.9V DC –1.9V DC 1.9V DC –1.9V DC 1kHz 260mVp-p 30kHz 260mVp-p 1.9V DC –1.9V DC adjust Input voltage VAPCIN + 100mV VAPCIN – 100mV VAPCIN 1kHz 45mVp-p 29 30 1.9V DC –1.9V DC 1.9V DC –1.9V DC 100kHz 40mVp-p –1.0 –1.0 –1.0 100kHz 100mVp-p 29 30 29 1 Output voltage = 0V FCE (TS) – GCE 16 17.0 –3.0 S8 S8 S8 S9 S9 S9 S9 S1 S1 S1 S1, S20-c S29 S29 S29 S29 S29 S29 S2, S3, S4, S5 S2, S3, S4, S5, S17, S25 S2, S3, S4, S5, S17, S25 S2, S3, S4, S5, S25 12 E2 Input Output ∗IC pin No. Ratings Unit mV No. Measurement item 71 Output voltage High 1 VALH1 73 AL 72 Output voltage Low 1 VALL1 –1680.0 –1540.0 mV –1720.0 –1580.0 mV — 20.0 — 23.0 — mV dB dB Output voltage High 2 VALH2 74 Output voltage Low 2 VALL2 1570.0 1690.0 75 Voltage gain GCE CE 76 Frequency response FCE 77 Output voltage High VCEH 1680.0 1790.0 — — mV –1580.0 –1090.0 mV –1780.0 –1730.0 –1680.0 mV 1650.0 1760.0 1870.0 –1180.0 –1070.0 –960.0 1700.0 1800.0 16.5 15.6 240.0 19.0 18.1 560.0 — 21.5 20.6 880.0 –1410.0 –1130.0 –890.0 590.0 840.0 1090.0 –1210.0 –880.0 –590.0 19.0 26.5 18.0 11.5 22.0 29.5 21.0 14.5 25.0 32.5 24.0 17.5 mV mV mV dB dB mV mV mV mV dB dB dB dB CXA2557R 78 Output voltage Low VCEL 79 Input voltage VAPCIN APC 80 Output voltage 1 VAPC1 86 EQ AGC – 15 – 81 Output voltage 2 VAPC2 82 Output voltage 3 VAPC3 83 Voltage gain 1 GEQ1 84 Voltage gain 2 GEQ2 85 Output voltage High 1 VEQH1 Output voltage Low 1 VEQL1 87 Output voltage High 2 VEQH2 88 Output voltage Low 2 VEQL2 89 Voltage gain 1 VAGC1 90 Voltage gain 2 VAGC2 91 Voltage gain 3 VAGC3 92 Voltage gain 4 VAGC4 (Ta = 25°C, VCC = 1.9V, GND = VC, VEE = –1.9V) Bias conditions (V) SW conditions E1 Min. 1600.0 1710.0 — 30kHz 100mVp-p 11.3 See the figure below. 0.1 0.1 10.6 10.7 16.6 16.7 22.6 22.7 µs µs 10.0 16.0 17.3 — Typ. Max. S12, S21-b S12, S21-b S2, S3, S4, S5, S12, S21-b S2, S3, S4, S5, S12, S21-b S2, S3, S4, S5, S12, S21-b S2, S3, S4, S5, S12, S21-b 0.1 0.1 –1.0 1.0 25 E2 Input Output ∗IC pin No. Ratings Unit mV No. Measurement item 93 Bias characteristics 1 BMIRR1 94 Bias characteristics 2 BMIRR2 –1585.0 –1475.0 mV 22.0 23.3 µs µs 96 MIRR 95 MIRR frequency response 1 FMIRR1 MIRR frequency response 2 FMIRR2 97 MIRR frequency response 3 FMIRR3 98 MIRR frequency response 4 FMIRR4 MIRR frequency response measurement (T475 to T478) – 16 – +1.0V GND –1.0V T475 T476 T477 T478 ∗ T475 measurement value + T476 measurement value = 33.3µs. ∗ T477 measurement value + T478 measurement value = 33.3µs. CXA2557R CXA2557R Electrical Characteristics Measurement Circuit VCC VCC S29 VCC c VEE b a c S20 b a c S19 36 S18 b a c b a S17 VCC VEE VCC S16 1µ 10k VEE VCC 10k 1µ 1k S15 10k VEE VCC 33µ /6.3V 33µ /6.3V VEE VEE VEE VCC VEE VCC VCC 1k 48 47 1000p 0.1µ 60k 40k 20k S27 S26 S25 S24 S23 S22 S21 46 45 44 43 42 41 40 39 38 37 RF AC OUT HOLD C VCA FC CNT 1 BST CNT TE CNT EQ IN FC CNT 2 AL CNT 1 S1 S2 3 S3 4 S4 S5 6 VEE S6 S7 33k S8 75k 33k 75k 7 8 9 LD FC H CNT FE CNT 2 PD A B AGC SW 33 RW SW 32 VCC 31 RFO 2 30 RFO 1 29 VC 28 VC IN 27 5C D GND E F 10 TE 1 PBH CNT 11 AL IN RF DC OUT 26 MIRR CNT APC ON MODE 2 35 MODE 1 34 TE BIAS FE BIAS 10k CE IN AL 1 13 14 15 16 17 18 19 FE 20 21 22 23 PH C CE 10k 10k 22k10k S9 10k S10 0.1µ 0.1µ 10k S11 S13 S12 SG E1 MIRR BIAS TE BH C CE 1 12 AL MIRR 25 10k 24 E2 – 17 – CXA2557R Description of Functions RF DC RW SW 32 A3 B4 C5 D6 40k 40k 40k 40k VC 40k 40k 40k 40k 45k Gain : ROM = 0dB RW = 13dB Gain : 12dB Gain : 5 ± 8dB RW L : ROM H : RW VC L : ON VCA Non-inverted M : OFF ROM 10k 26 RF DC OUT 36 APC ON 40k 10k VCA CNT AGC L : VCA H : AGC 41 VCA AGC SW 33 The RF DC block processes the RF DC signal that is used for the MIRR, FOK and DEFECT signals. This block supports CD-ROM/RW, and the gain can be switched by Pin 32 (RW SW). The gain during RW is 13dB higher than that during ROM. ROM is selected when Pin 32 is Low, and RW when High. This block has a VCA, and the total gain can be adjusted by Pin 41 (VCA). The VCA has the same characteristics (control voltage – gain) as the RF AC block. The total gain is ROM: 17 ± 8dB RW: 30 ± 8dB This block has a function for shifting the output DC voltage, and this function is switched by Pin 36 (APC ON). The DC voltage is shifted when Pin 36 is Low, and not shifted when Pin 36 is Medium. When the DC voltage is shifted, the Pin 26 DC voltage equal to (Vcc-GND)/6 is shifted to the GND side. The Pin 26 gain is as follows. RF DC OUT = GRF DC · (A + B + C + D) – 18 – CXA2557R RF AC RW SW 32 A3 B4 C5 D6 13dB RW L : ROM H : RW ROM RF AC OUT 48 VCA Non-inverted 47 EQ IN Non-inverted EQ 29 RFO 1 30 RFO 2 AGC VCA AGC L : ON M : OFF H : OFF 34 MODE 1 L : VCA H : AGC VCA CNT 41 VCA 33 AGC SW Gain : ROM = 0dB RW = 13dB Gain : 0 ± 8dB Gain : 20dB The RF AC block processes the RF AC signal. This block supports CD-ROM/RW, and the gain can be switched by Pin 32 (RW SW). The gain during RW is 13dB higher than that during ROM. ROM is selected when Pin 32 is Low, and RW when High. This block has a VCA, and the total gain can be adjusted by the Pin 41 (VCA) voltage. The VCA has the same characteristics (control voltage – gain) as the RF DC block. The total gain is ROM: 20 ± 8dB RW: 33 ± 8dB The capacitor values connected between this IC and the DSP can be switched , by using the Pin 30 (RFO 2) output. The Pin 29 and 30 gains are as follows. RFO 1 = GRF AC · (A + B + C + D) RFO 2 = GRF AC · (A + B + C + D) – 19 – CXA2557R EQ VCC EQ fc control 20k BST CNT 42 FC CNT 2 45 43 FC H CNT 44 FC CNT 1 VCC L : CLV M : CLV H : CAV EQ IN 47 HPF Boost Filter fc LPF 1 LPF 2 CAV CLV CLV MODE 35 MODE 2 34 MODE 1 29 RFO 1 LPF 4 L : ON M : OFF H : OFF 30 RFO 2 LPF 3 The EQ block is built into the RF AC system. The cut-off frequencies of each filter are linked. The cut-off frequencies are set by the external resistors connected to Pins 44 (FC CNT 1) and 45 (FC CNT 2), the Pin 43 (FC H CNT) voltage, and Pins 34 (MODE 1) and 35 (MODE 2). The cut-off frequencies are set according to the following two systems. CLV mode: When Pin 34 is Low, n, 2n, 4n and 6n are set by Pins 34 and 35 based on the cut-off frequency (fc = n) set by the external resistor connected to Pin 44. CAV mode: When Pin 43 is VC, 0.5N to 1.5N is set by the Pin 43 voltage based on the cut-off frequency (fc = N) set by the external resistor connected to Pin 45. n CLV CAV 0.5N N 1.5N f 2n 4n 6n The boost amount is set by the Pin 42 (BST CNT) voltage. The transmittance for each filter of the EQ block is as follows. HPF: (KS2) / (S2 + 3.22597S + 2.94933) LPF1: (2.94933) / (S2 + 3.22597S + 2.94933) LPF2: (3.32507) / (S2 + 2.75939S + 3.32507) LPF3: (4.20534) / (S2 + 1.82061S + 4.20534) LPF4: (1.68536) / (S + 1.68536) RMIN is 40kΩ for the external resistor connected to Pin 44, and 30kΩ for the external resistor connected to Pin 45. – 20 – CXA2557R Pin Settings and Cut-off Frequency MODE 1 (Pin 34) L MODE 2 (Pin 35) X L M M H VC – 1V to VC to VC + 1V — FC H CNT (Pin 43) fc n 2n 4n 6n 0.5N to N to 1.5N CLV mode H X CAV AGC HOLD C 46 VCA 41 AGC SW 33 L : VCA H : AGC VCA CNT AGC VCA RFO 1 LPF fc = 50kHz Peak Hold comp The AGC block sets the RF AC and RF DC gains. AGC/VCA can be switched by Pin 33 (AGC SW). VCA is selected when Pin 33 is Low, and AGC when High. The following can be performed by the Pin 41 (VCA) voltage. VCA: Gain adjustment AGC: Output amplitude setting Pin 46 (HOLD C) is used to connect a capacitor for setting the AGC time constant. – 21 – CXA2557R FE RW SW 32 VC 375k FE CNT 38 FE BIAS 19 130k A3 B4 C5 D6 180k 180k 180k 180k L : ROM H : RW RW VCA Non-inverted ROM 300k 300k 20 VC 107k FE 40k 40k 40k 40k 130k VC Gain : ROM = 3dB RW = 16dB Gain : 13 ± 8dB The FE block processes the focus error signal. This block supports CD-ROM/RW, and the gain can be switched by Pin 32 (RW SW). The gain during RW is 13dB higher than that during ROM. ROM is selected when Pin 32 is Low, and RW when High. This block has a VCA, and the total gain can be adjusted by the Pin 38 (FE CNT) voltage. The total gain is as follows. ROM: 16 ± 8dB RW: 29 ± 8dB The output DC voltage level can be adjusted by the Pin 19 (FE BIAS) voltage. The Pin 20 gain is as follows. FE = GFE · (B + D – A – C) – 22 – CXA2557R TE MODE 1 34 TE 1 10 F 9 8 E 10k VC RW VC VCA Non-inverted L : ON M : OFF H : OFF 45k 40k ROM 50k 40k VC 200k 17 TE RW SW 32 TE CNT 40 TE BIAS 18 50k Gain : 6.8dB Gain : ROM = 1dB RW = 14dB Gain : 7.1 ± 8dB Gain : 6dB The TE block processes the tracking error signal. This block supports CD-ROM/RW, and the gain can be switched by Pin 32 (RW SW). The gain during RW is 13dB higher than that during ROM. ROM is selected when Pin 32 is Low, and RW when High. This block has a VCA, and the total gain can be adjusted by the Pin 39 (TE CNT) voltage. The total gain is as follows. ROM: 20.9 ± 8dB RW: 33.9 ± 8dB The output DC voltage level can be adjusted by the Pin 18 (TE BIAS) voltage. The LPF cut-off frequency can be switched by the Pin 34 (MODE 1) voltage. fc = 20kHz when Pin 34 is Low, and fc = 250kHz when Medium or High. The Pin 17 gain is as follows. TE = GTE · (F – E) – 23 – CXA2557R AL RW SW 32 9k 20k AL IN 11 VC 20k RW L : ROM H : RW VCA Non-inverted 13 AL 1 10k ROM 10k 12 AL AL CNT 40 40k Gain : ROM = –7dB RW = 6dB Gain : 7 ± 8dB The AL block processes the alignment signal. This block supports CD-ROM/RW, and the gain can be switched by Pin 32 (RW SW). The gain during RW is 13dB higher than that during ROM. ROM is selected when Pin 32 is Low, and RW when High. This block has a VCA, and the total gain can be adjusted by the Pin 40 (AL CNT) voltage. The total gain is as follows. ROM: 0 ± 8dB RW: 13 ± 8dB Pin 12 (AL) is the non-inverted output, and Pin 13 (AL 1) is the inverted output with respect to the input. The Pin 12 and 13 gains are as follows. AL = GAL · AL IN AL 1 = –GAL · AL IN – 24 – CXA2557R CE AL or AL 1 CE IN TE 14 20k 90k 16 15 CE 1 Gain : 7dB Gain : 13dB CE The CE block processes the center error signal. The AL and TE signals are arithmetically amplified and output as the center error signal. The total gain is 20dB. The Pin 16 (CE) gain is as follows. CE = GCE · (AL + αTE): straight optical path laser coupler CE = GCE · (AL 1 + αTE): folded optical path laser coupler MIRR BH C PH C 22 23 MIRR BIAS 24 RF DC LPF Peak Bottom Hold Half 25 MIRR 37 MIRR CNT 21 PBH CNT The MIRR block processes the MIRR signal. The MIRR signal is generated from the RF DC signal. The initial stage LPF is a third-order LPF, and separates the envelope and EFM signals. The LPF cut-off frequency can be switched by the Pin 37 (MIRR CNT) voltage. Pins 22 (BH C) and 23 (PH C) are used to connect capacitors for peak and bottom hold of the separated envelope signal. The peak and bottom hold time constants are set by the Pin 21 (PBH CNT) voltage. The DC voltage level of the mirror circuit can be adjusted by the Pin 24 (MIRR BIAS) voltage. – 25 – CXA2557R Center Voltage Generation Circuit VCC VCC 40k VC Buffer 28 40k VC VC The center voltage VC = (VCC + GND)/2 is output from Pin 28 (VC). The maximum output current is about ±3mA. APC VCC PD 2 56k 1 1k 56k 100µ LD 10 10k 10k 55k 10k 100 500 1µ 1.25V When the laser diode is driven by a constant current, the optical power output has extremely large negative temperature characteristics. The APC circuit uses a monitor photodiode to control the laser diode current in order to maintain the optical power output at a constant level. – 26 – CXA2557R Application Circuit 3 spots EQ Boost Control RF VCA/AGC Control TE VCA Control VC VCC VCC 0.1µ EQ fc Control FE VCA Control AL VCA Control VCC 1µ 30k 40k 20k 47k 48 47 46 45 44 43 42 41 40 39 38 37 FC CNT 1 BST CNT FC CNT 2 RF AC OUT FC H CNT HOLD C FE CNT VCA Pickups LD PD A B C D GND VC 33k F 33k 75k 9F 75k 1 LD 2 PD 3A 4B 5C 6D TE CNT EQ IN AL CNT MIRR CNT 36 APC ON MODE 2 35 MODE 1 34 AGC SW 33 RW SW 32 VCC 31 RFO 2 30 RFO 1 29 VC 28 APC On/Off SW EQ fc EQ fc, TE fc RF VCA/AGC SW ROM/RW SW VCC RF AC Out 2 10µ 0.1µ RF AC Out 1 VCC 0.1µ RF DC Out MIRR Out 7 GND 8E E 10 TE 1 VC IN 27 TE BIAS PBH CNT 11 AL IN RF DC OUT 26 10µ FE BIAS CE IN 13 TE 14 15 16 17 18 19 BH C 20 21 22 23 VCC 47k VCC TE Out VCC 47k 47k FE Out 0.1µ 0.1µ VCC 47k Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same. – 27 – MIRR BIAS 24 CE 1 AL 1 FE PH C 12 AL MIRR 25 CE CXA2557R Application Circuit Laser coupler (straight optical path type) EQ Boost Control RF VCA/AGC Control VC VCC VCC 0.1µ TE VCA Control EQ fc Control FE VCA Control VCC 47k 38 37 1µ 30k 40k 20k 48 47 46 45 44 43 42 41 40 AL VCA Control 39 RF AC OUT FC H CNT HOLD C FE CNT VCA FC CNT 1 BST CNT EQ IN FC CNT 2 AL CNT Pickups LD PD PD 1 PD 2 1 LD 2 PD 3A 4B 5C GND VC 33k F 33k 75k AL 9F 75k 6D TE CNT MIRR CNT 36 APC ON MODE 2 35 MODE 1 34 AGC SW 33 RW SW 32 VCC 31 RFO 2 30 RFO 1 29 VC 28 APC On/Off SW EQ fc EQ fc, TE fc RF VCA/AGC SW ROM/RW SW VCC RF AC Out 2 10µ 0.1µ RF AC Out 1 VCC 0.1µ RF DC Out MIRR Out 7 GND 8E E 10 TE 1 VC IN 27 TE BIAS PBH CNT 11 AL IN RF DC OUT 26 10µ FE BIAS CE IN BH C 13 14 15 16 17 18 19 20 21 22 23 PH C VCC CE TE 20k 22k 20k VCC 47k VCC 47k VCC 47k 0.1µ 0.1µ Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same. CE Out TE Out – 28 – FE Out MIRR BIAS 24 47k CE 1 AL 1 12 AL MIRR 25 FE CXA2557R Application Circuit Laser coupler (folded optical path type) EQ Boost Control RF VCA/AGC Control VC VCC VCC 0.1µ TE VCA Control EQ fc Control FE VCA Control VCC 47k 38 37 1µ 30k 40k 20k 48 47 46 45 44 43 42 41 40 AL VCA Control 39 RF AC OUT FC H CNT HOLD C FE CNT VCA FC CNT 1 BST CNT EQ IN FC CNT 2 AL CNT Pickups LD PD PD 1 PD 2 1 LD 2 PD 3A 4B 5C GND VC 33k F 33k 75k AL 9F 75k 6D TE CNT MIRR CNT 36 APC ON MODE 2 35 MODE 1 34 AGC SW 33 RW SW 32 VCC 31 RFO 2 30 RFO 1 29 VC 28 APC On/Off SW EQ fc EQ fc, TE fc RF VCA/AGC SW ROM/RW SW VCC RF AC Out 2 10µ 0.1µ RF AC Out 1 VCC 0.1µ RF DC Out MIRR Out 7 GND 8E E 10 TE 1 VC IN 27 TE BIAS PBH CNT 11 AL IN RF DC OUT 26 10µ FE BIAS CE IN BH C 13 14 15 16 17 18 19 20 21 22 23 PH C VCC CE TE 20k 22k 20k VCC 47k VCC 47k VCC 47k 0.1µ 0.1µ TE Out Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same. CE Out – 29 – FE Out MIRR BIAS 24 47k CE 1 AL 1 12 AL MIRR 25 FE CXA2557R Example of Representative Characteristics (VC voltage reference) RF DC Characteristics Graphs (Pin 26) Frequency response 40 RW 30 27 25 23 21 ROM VCA characteristics Gain [dB] 20 ROM 10 Gain [dB] 1M Frequency [Hz] 10M 19 17 15 13 0 11 9 –10 100k 7 VC – 1.0 VC VCA voltage [V] VC + 1.0 RF AC Characteristics Graphs (Pin 29) Frequency response 50 31 29 40 RW 27 25 ROM VCA characteristics Gain [dB] Gain [dB] 100k 1M Frequency [Hz] 10M 30 ROM 20 MODE 1, 2 = L, L FC CNT 1 = 40kΩ 23 21 19 17 10 15 13 0 10k 11 VC – 1.0 VC VCA voltage [V] VC + 1.0 EQ characteristics (CLV) 50 FC CNT 1 = 40kΩ 40 M, L M, M 40 50 EQ characteristics (CAV) VC + 1.0V Gain [dB] Gain [dB] 30 L, L M, H 30 VC – 1.0V 20 MODE 1, 2 = H, L FC CNT 2 = 30kΩ VC 20 10 10 0 100k 1M Frequency [Hz] 10M 0 100k 1M Frequency [Hz] 10M – 30 – CXA2557R Cut-off frequency response 1 1.6M 27M Cut-off frequency response 2 1.2M 1M 800k 600k 400k 40k N – Cut-off frequency [Hz] 50k 60k 70k 80k 90k FC CNT 1 external resistance [Ω] 100k n – Cut-off frequency [Hz] 1.4M 23M 19M 15M 11M 9M 7M 30k 40k 50k 60k 70k FC CNT 2 external resistance [Ω] 80k Boost characteristics (CLV) 33 31 29 ROM 33 31 29 Boost characteristics (CAV) ROM Gain [dB] 27 25 23 21 VC – 1.0 Gain [dB] VC BST CNT voltage [V] VC + 1.0 27 25 23 21 VC – 1.0 VC BST CNT voltage [V] VC + 1.0 AGC Characteristics Graph (Pin 29) Output amplitude characteristics 1.2 1.0 0.8 0.6 0.4 0.2 0 VC – 1.0 Output amplitude [Vp-p] VC – 0.5 VCA voltage [V] VC – 31 – CXA2557R TE Characteristics Graphs (Pin 17) Frequency response 1 50 50 Frequency response 2 40 RW 40 Gain [dB] 30 ROM 20 Gain [dB] 30 MODE 1 = M, H 20 MODE 1 = L 10 10 0 1k 10k 100k Frequency [Hz] 1M 0 1k 10k 100k Frequency [Hz] 1M TE CNT characteristics 31 29 27 25 ROM 1.2 0.8 TE BIAS characteristics DC output voltage [V] VC TE CNT voltage [V] VC + 1.0 0.4 0 –0.4 –0.8 –1.2 VC – 1.0 Gain [dB] 23 21 19 17 15 13 11 VC – 1.0 VC TE BIAS voltage [V] VC + 1.0 ∗ TE BIAS voltage; DC output voltage is 0V at VC. – 32 – CXA2557R FE Characteristics Graphs (Pin 20) Frequency response 40 26 24 30 RW 22 20 ROM FE CNT characteristics Gain [dB] Gain [dB] 10k 100k Frequency [Hz] 1M 20 ROM 10 18 16 14 12 0 10 8 –10 1k 6 VC – 1.0 VC FE CNT voltage [V] VC + 1.0 FE BIAS characteristics 1.2 0.8 DC output voltage [V] 0.4 0 –0.4 –0.8 –1.2 VC – 1.0 VC FE BIAS voltage [V] VC + 1.0 ∗ FE BIAS voltage; DC output voltage is 0V at VC. – 33 – CXA2557R AL Characteristics Graphs (Pins 12 and 13) Frequency response (AL) 30 30 Frequency response (AL 1) 20 RW 20 RW Gain [dB] 10 ROM 0 Gain [dB] 10 ROM 0 –10 –10 –20 1k 10k 100k Frequency [Hz] 1M –20 1k 10k 100k Frequency [Hz] 1M AL CNT characteristics 10 8 6 4 ROM Gain [dB] 2 0 –2 –4 –6 –8 –10 VC – 1.0 VC AL CNT voltage [V] VC + 1.0 CE Characteristics Graph (Pin 16) Frequency response 40 APC Characteristics Graph (Pin 1) LD voltage vs. PD voltage 1.8 1.5 30 1.2 0.9 Gain [dB] LD [V] 1k 10k 100k Frequency [Hz] 1M 20 0.6 0.3 0 –0.3 10 0 –0.6 –0.9 –10 –1.2 –1.78 –1.76 –1.74 –1.72 PD [V] –1.70 –1.68 – 34 – CXA2557R Package Outline Unit: mm 48PIN LQFP (PLASTIC) 9.0 ± 0.2 ∗ 36 37 7.0 ± 0.1 25 24 S (8.0) A 48 1 0.5 + 0.08 0.18 – 0.03 + 0.2 1.5 – 0.1 12 13 B (0.22) + 0.05 0.127 – 0.02 0.13 M 0.1 0.1 ± 0.1 0.5 ± 0.2 S (0.127) +0.05 0.127 – 0.02 (0.18) 0.18 ± 0.03 0° to 10° 0.5 ± 0.2 DETAIL B:SOLDER DETAIL A DETAIL B:PALLADIUM NOTE: Dimension “∗” does not include mold protrusion. PACKAGE STRUCTURE PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE LQFP-48P-L01 LQFP048-P-0707 LEAD TREATMENT LEAD MATERIAL PACKAGE MASS EPOXY RESIN SOLDER/PALLADIUM PLATING 42/COPPER ALLOY 0.2g – 35 – 0.127 ± 0.04 + 0.08 0.18 – 0.03