CXB1558Q-Y

CXB1558Q-Y Laser Driver Description The CXB1558Q-Y is a high-speed monolithic Laser Driver/Current Switch with ECL input level. Open collector outputs are provided at the output pins (Q, Q) and have the capability of driving modulation current of 60mApp at a max. data rate of 2.0Gbps (NRZ). DRIVADJ and SDRIV inputs control the modulation current amplitude, and BIASADJ, SBIAS inputs control the bias current. Modulation and bias current can be controlled by either voltage or current through these pins. This device includes D-FF for duty cycle correction and Laser Shutdown function. Features • Maximum data rate (NRZ): 2.0Gbps (Typ.) • Differential Data input: ECL • D-FF for Duty Cycle Correction • Laser Shutdown Input: TTL Applications • SONET/SDH: 155,622Mb/s,1.2Gb/s • Fiber channel: 133,266,532Mb/s,1.062Gb/s • FDDI: 125Mb/s ESCON: 200Mb/s HDTV: 1.5Gb/s Absolute Maximum Ratings • Supply voltage • Input voltage • Differential input voltage • Differential clock voltage • Output current (Continuous) Input current (Continuous) • Storage temperature 32 pin QFP (Ceramic) Vcc – VEE –0.3 to +7.0 VIN VEE to +0.5 |VIN – VIN| 0 to 2.5 |VCLK – VCLK| 0 to 2.5 IQ, IBIAS 0 to 80 IDRVADJ 0 to 8 IBIASADJ 0 to 8 Tstg –65 to +150 V V V V mA mA mA °C Recommended Operating Conditions • DC power supply voltage Vcc – VEE • Operating case temperature Tc Structure Bipolar silicon monolithic IC 4.75 to 5.46 0 to +85 V °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E94720-PK CXB1558Q-Y Block Diagram and Pin Assignment LDOFF VCC2 CLK CLK VEE NC 24 23 22 21 20 19 18 NC 17 VEE1 25 VBB 26 D 27 NC 16 NC 15 NC 14 NC 13 NC 12 NC 11 BIASADJ 10 VEE2 9 SBIAS 8 VOLTAGE SOURCE D-FF D 28 INPUT SIGNAL MONITOR VCC1 29 P 30 P 31 DRIVADJ 32 MODULATION GENERATOR BIAS GENERATOR 1 2 3 4 5 6 7 SDRIV BIASB VEE2 Truth table LDOFF H H L L D L H L H Q H L H H P H L H L ∗ In a case of resistor load. –2– BIASA Q Q Q Q CXB1558Q-Y Pin Description Pin No. Symbol Typical voltage (V) DC 0mA to 8mA∗1 0mA to 6mA∗2 VEE to VEE +2.5V –5.2V 0mA to 60mA∗1 0mA to 40mA∗2 0mA to 60mA∗1 0mA to 40mA∗2 7 8 1 AC Equivalent circuit Description 1 SDRIV — 3 4 5 6 Modulation generator current monitor. Modulation generator current adjustment. Negative power supply pin. 32 DRIVADJ VCC 2, 10 VEE2 3 Q 4 5 Q 6 — 32 Modulation generator current output. 10 VEE 2 — 7 BIASB 0mA to 30mA — VCC Bias generator current output. 8 BIASA 9 9 SBIAS 0mA to 8mA — 11 Bias generator current monitor. 11 BIASADJ VEE to VEE +2.5V — 2 10 VEE VCC Bias generator current adjustment. 29 20 CLK 200Ω 21 — –1.84V to –0.81V 200Ω 20 Clock signal input. 21 CLK 19 VEE 19 VEE –5.2V — ∗1 VEE = –5.46V to –4.94V ∗2 VEE = –4.94V to –4.75V –3– CXB1558Q-Y Pin No. Symbol Typical voltage (V) DC AC Equivalent circuit VCC 900Ω Description 26 VBB –1.3V — 26 500µ VEE Reference voltage (–1.3V) Use for the reference voltage in the case of single-phase input. Max. drive current ±200µA 25 VEE1 –5.2V — VCC 29 Negative power supply pin. 27 D 27 200Ω — 28 D –1.84V to –0.81V 200Ω 28 Data signal input. 29 VCC1 0V — 25 VEE 30 31 Positive power supply pin. 30 P — 200Ω 200Ω 0mA to 2.7mA Input signal monitor output. 31 P — 1.7mA VEE –4– CXB1558Q-Y Electrical Characteristics • DC Electrical Characteristics Item Power supply current (VCC1 = VCC2 = GND, VEE1 = VEE2 = –5.46 to –4.75V, Tc = 0 to +85°C) Symbol IEE Condition IQ = 0mA, IBIAS = 0mA IQ = 60mA, IBIAS = 60mA VEE = –5.46 to –4.94V Min. –110 –260 60 40 –2.5 60 –2.7 at voltage control application at voltage control application –2.7 –2.7 1 Tc = 25°C –2.5 –1.17 –1.84 — VEE + 2.0 VEE – 0.5 — –320 –1.38 Typ. –78 –213 — — — — — — — 1.7 — — — — — — — — –1.32 Max. — — — — 2.0 — 0.0 0.0 0.0 2.7 2.0 –0.81 –1.48 20 Vcc VEE + 0.8 10 — –1.26 µA V V mA V V mA mA Unit Max. Modulation current Modulation output voltage range Max. Bias current Bias output voltage range Modulation current monitor output voltage range Bias current monitor output voltage range Input signal monitor current Input signal monitor output voltage range ECL Input High voltage ECL Input Low voltage ECL Input High current TTL Input High voltage TTL Input Low voltage TTL Input High current TTL Input Low current Reference bias voltage IQ VQ IBIAS VBIAS VSQ VSBIAS IP VP VEDH VEDL IEDH VTDH VTDL ITDH ITDL VBB VEE = –4.94 to –4.75V Tc = 25°C IBIASA + IBIASB µA V Ratio of current setup Item Modulation current vs. Modulation monitor current Modulation current vs. Modulation control current Bias current vs. Bias monitor current Bias current vs. Bias control current Symbol S1 S2 S3 S4 Condition at voltage control application at current control application at voltage control application at current control application Min. 9.0 6.5 11.0 7.4 Typ. 11.4 8.6 12.0 9.8 Max. 12.0 10.5 13.0 12.0 –5– CXB1558Q-Y • AC Electrical Characteristics (VCC1 = VCC2 = GND, VEE1 = VEE2 = –5.46 to –4.75V, Tc = 0 to +85°C, Rl = 25Ω to GND) Item Max. Data rate Max. FF Operating Frequency Set Up Time Hold Time Shut Down Time Rise time Fall time Symbol fDMAX fFMAX Ts TH TSHUT TTLH TTHL 20 to 80% IQ = 60mA, IBIAS = 0 NRZ Condition Min. 1.6 1.6 150 10 — — — Typ. 2.0 2.0 — — — 170 150 Max. — — — — 30 — — Unit Gbps GHz ps µs ps Application Circuit Current Control Application VSHUT VCLK ECL Level Single Input TTL Level Input L : Shut down Open High VEE = –5.2V LDOFF VCC2 CLK CLK VEE NC 0.01µF VEE1 VEE = –5.2V 0.01µF VBB 26 D ECL Level Single Input VIN VCC1 29 P 30 200Ω P IP DRIVADJ 32 31 D 27 24 23 22 21 20 19 18 NC 17 25 NC 16 NC 15 NC 14 NC 13 NC 12 NC BIASADJ 11 VOLTAGE SOURCE D-FF 28 INPUT SIGNAL MONITOR MODULATION GENERATOR BIAS GENERATOR VEE = –5.2V 10 9 VEE2 SBIAS 1 2 3 4 5 6 7 8 IBIASADJ SDRIV BIASB Q Q BIASA VEE2 Q Q IDRIVADJ IQ IQ : IDRVADJ ≈ 9 : 1 VEE = –5.2V 5.1Ω IBIAS : IBIASADJ ≈ 10 : 1 0.1µH IBIAS Laser Diode –6– CXB1558Q-Y Measurement Circuit (DC) CLKin VSHUT VEE = –5.2V LDOFF VCC2 CLK CLK VEE NC 0.01µF VEE = –5.2V 24 23 22 21 20 19 18 NC 17 VEE1 25 26 D D VCC1 29 P 30 31 32 27 NC 16 NC 15 NC 14 NC 13 NC 12 NC 11 BIASADJ VEE = –5.2V 0.01µF VBB VOLTAGE SOURCE D-FF 28 INPUT SIGNAL MONITOR VIN 200Ω IP P MODULATION GENERATOR BIAS GENERATOR 10 9 VEE2 SBIAS DRIVADJ 1 2 3 4 5 6 7 8 SDRIV BIASB VEE2 Q Q BIASA Q Q IBIASADJ IDRVADJ A IQB VEE = –5.2V A IQ A IBIAS CLKin VSHUT VEE = –5.2V LDOFF VCC2 CLK CLK VEE NC 18 0.01µF 24 VEE = –5.2V VEE1 VBB 26 D D VCC1 29 P 30 200Ω IP P 31 32 27 23 NC 22 21 20 19 17 25 NC 16 NC 15 NC 14 NC 13 NC 12 NC 11 BIASADJ 510Ω VEE2 SBIAS 9 VEE = –5.2V VBIAS 10 8 0.01µF VOLTAGE SOURCE D-FF 28 INPUT SIGNAL MONITOR VIN MODULATION GENERATOR BIAS GENERATOR DRIVADJ 510Ω VEE2 SDRIV BIASB BIASA Q Q Q Q VMOD 1 2 3 4 5 6 7 A IQM IBM A A VEE = –5.2V IQB A IQ A IBIAS –7– CXB1558Q-Y Measurement Circuit (AC) CLKin VSHUT VEE = –5.2V LDOFF VCC2 CLK CLK VEE NC 0.01µF 24 23 22 21 20 19 18 NC 17 VEE = –5.2V VEE1 0.01µF VBB 25 26 D D VCC1 29 P 30 31 32 27 NC 16 NC 15 NC 14 NC 13 NC 12 NC BIASADJ 11 VEE = –5.2V VOLTAGE SOURCE D-FF 28 INPUT SIGNAL MONITOR VIN 200Ω IP P MODULATION GENERATOR BIAS GENERATOR 10 9 VEE2 SBIAS DRIVADJ 1 2 3 4 5 6 7 8 SDRIV VEE2 IDRVADJ 51Ω 51Ω VEE = –5.2V Digitizing oscilloscope Q Monitor Coaxial cable QB Monitor 50Ω 50Ω –8– BIASB BIASA Q Q Q Q CXB1558Q-Y Voltage Control Application VSHUT VCLK ECL Level Single Input TTL Level Single Input L: Shut down Open High VEE = –5.2V LDOFF VCC2 CLK CLK VEE NC 0.01µF VEE1 VEE = –5.2V 0.01µF VBB 26 D ECL Level Single Input VIN D VCC1 29 P 30 200Ω P IP 32 DRIVADJ 510Ω 31 27 24 23 22 21 20 19 18 NC 17 25 VOLTAGE SOURCE NC 16 NC 15 NC 14 NC 13 NC 12 NC BIASADJ 11 VBIASADJ D-FF 28 INPUT SIGNAL MONITOR MODULATION GENERATOR BIAS GENERATOR 10 9 510Ω VEE2 SBIAS VEE = –5.2V VDRIVADJ 1 2 3 4 5 6 7 8 A BIASA SDRIV BIASB VEE2 Q Q Q Q IBIASMONITOR IQMONITOR IQ : IQMONITOR ≈ 11 : 1 VEE = –5.2V A IQ 5.1Ω 0.1µH IBIAS IBIAS : IBIASMONITOR ≈ 12 : 1 Laser Diode Cautions for Handling 1. The outputs (Q, Q, BIASA, BIASB, SDRIV, SBIAS, P and P) on this IC are the open collector type. Therefore, when these pins are not bing used, connect them to Vcc. 2. When the inputs (DRIVEADJ and BIASADJ) are not bing used, connect them to VEE. 3. Do not apply voltage over VEE + 2.5V to DRIVADJ pin and BIASADJ pin. 4. In voltage control Application, do not apply voltage over the output voltage range to SDRIV pin and SBIAS pin. (see DC Characteristics of Laser Part and Voltage Control Application Circuit.) 5. Maximum drive current of VBB pin is ±200µA. 6. Maximum input differential voltage is 2.5V. ( | D – D | , | CLK – CLK | ) 7. As the electronic breakdown level is weak, take care to handle. –9– CXB1558Q-Y Example of Representative Characteristics Modulation current vs. Modulation control current 100 Bias current vs. Bias control current 100 IQ – Modulation current (mA) IBIAS – Bias current (mA) 0 2 4 6 8 10 80 60 80 60 40 40 20 0 IDRIVADJ – Modulation control current (mA) IQ : IDRIVADJ ≈ 9 : 1 20 0 0 2 4 6 8 10 IBIASADJ – Bias control current (mA) IBIAS : IBIASADJ ≈ 10 : 1 Modulation current vs. Modulation control voltage 100 Bias current vs. Bias control voltage 100 IQ – Modulation current (mA) 60 IBIAS – Bias current (mA) 0 0.5 1 1.5 2 80 80 60 40 40 20 0 VDRVADJ – Modulation control voltage (V) IQ ≈ 0.1 × ( Vmod – 0.8 ) [A] 20 0 0 0.5 1 1.5 2 VBIAS – Bias control voltage [V] IBIAS ≈ 0.11 × ( VBIAS – 0.8 ) [A] – 10 – CXB1558Q-Y Package Outline Unit: mm 32PIN QFP (CERAMIC) 14.73 ± 0.3 24 17 4.92 MAX 0.15 ± 0 .05 25 16 32 9 10.63 MAX 0.76 1 1.016 8 0.635 ± 0.125 0.48 ± 0.1 0° to 10° PACKAGE STRUCTURE PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE QFP-32C-L01 XQFP023-G-0000-A LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT CERAMIC TIN PLATING 42 ALLOY 0.3g – 11 – (0.825)