CXG1039TN

CXG1039TN High Isolation Absorptive SPDT Switch MMIC with Integrated Control Logic Description The CXG1039TN is a high isolation absorptive SPDT (Single Pole Dual Throw) switch MMIC used in PCS handsets. This IC is designed using the Sony’s GaAs J-FET process and operates with CMOS input. Features • Absorptive type • CMOS input control • Low insertion loss 0.8 dB (Typ.) at 2.0 GHz • High isolation 50 dB (Typ.) at 2.0 GHz • Small Package TSSOP-10pin Applications High isolation switch for digital cellular telephones such as PCS handsets. Structure GaAs J-FET MMIC 10 pin TSSOP (Plastic) Absolute Maximum Ratings (Ta=25 °C) • Supply voltage VDD 7 V • Control voltage Vctl 5 V • Input power Pin 25 dBm • Operating temperature Topr –35 to +85 °C • Storage temperature Tstg –65 to +150 °C GaAs MMICs are ESD sensitive devices. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E99143-TE CXG1039TN Pin Configuration Unit : mm Block Diagram RF1 1 CTL GND RF1 GND VDD 5 10pin TSSOP (PLASTIC) 6 10 RF3 GND GND GND RF2 RF2 SW1 SW3 50Ω SW2 SW4 50Ω RF3 Recommended Circuit Rctl 1kΩ CTL C1 100pF 1 10 C2 100pF RF3 2 Rrf 100kΩ RF1 C2 100pF 9 3 CXG1039TN 8 4 7 VDD C1 100pF 5 6 C2 100pF RF2 When using the CXG1039TN, the following external components should be used: C1: This is used for signal line filtering 100 pF is recommended. C2: This is used for RF De-coupling and must be used in all applications. 100 pF is recommended. Rctl: This is used to give improved ESD performance. Rrf: This resistor is used to stabilize the dc operating point at high power levels. A value of 100 kΩ is recommended. —2— CXG1039TN Truth Table CTL H L RF1 - RF2 ON RF1 - RF3 ON SW1 ON OFF SW2 OFF ON SW3 OFF ON SW4 ON OFF Operating Condition Control voltage (High) Control voltage (Low) Bias voltage Symbol Vctl (H) Vctl (L) VDD Min. 2.5 0 2.7 Typ. (Ta=–35 °C to +85 °C) Max. 3.6 0.5 4 Unit. V V V —3— CXG1039TN Electrical Characteristics (1) VDD=3 V, Vctl (L)=0 V, Vctl (H)=2.8 V±3 %, @2 GHz, Pin=10 dBm, Impedance at all ports : 50 Ω Item Insertion loss Isolation ON port VSWR OFF port VSWR 3rd order input intercept point Input power for 1 dBm compression Switching speed Bias current Control current ∗1 two-tone input power up to 5 dBm Symbol IL ISO VSWR (ON) VSWR (OFF) IP3 P1dB TSW IDD ICRL Min. 40 Typ. 0.8 50 1.2 1.7 17 1 220 80 Max. 1.2 1.5 2.0 (Ta=25 °C) Unit dB dB ∗1 35 12 5 350 150 dBm dBm µs µA µA Electrical Characteristics (2) VDD=3 V, Vctl (L)=0 V, Vctl (H)=2.8 V±3 %, @2 GHz, Pin=10 dBm, Impedance at all ports : 50 Ω Item Insertion loss Isolation ON port VSWR OFF port VSWR 3rd order input intercept point Input power for 1 dBm compression Switching speed Bias current Control current ∗1 two-tone input power up to 5 dBm Symbol IL ISO VSWR (ON) VSWR (OFF) IP3 P1dB TSW IDD ICRL Min. 40 Typ. 0.8 50 1.2 1.7 17 1 220 80 (Ta=–35 °C to +85 °C) Max. 1.4 1.5 2.0 dBm dBm µs µA µA Unit dB dB ∗1 35 12 5 450 180 —4— CXG1039TN Package Outline Unit : mm 10PIN TSSOP(PLASTIC) 1.2MAX ∗2.8 ± 0.1 10 6 0.1 ∗2.2 ± 0.1 + 0.15 0.1 – 0.05 3.2 ± 0.2 1 5 0.5 0.25 0° to 10° + 0.08 0.22 – 0.07 0.1 M (0.2) + 0.08 0.22 – 0.07 DETAIL A NOTE: Dimension “∗” does not include mold protrusion. PACKAGE STRUCTURE PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE TSSOP-10P-L01 LEAD TREATMENT LEAD MATERIAL PACKAGE MASS EPOXY RESIN SOLDER PLATING COPPER ALLOY 0.02g —5— (0.1) + 0.025 0.12 – 0.015 A 0.45 ± 0.15