CXG1047FN

CXG1047FN Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications Description The CXG1047FN dual band GaAs PA is a 3-stage power amplifier that may be used for both GSM900 and DCS1800 applications. To achieve minimum die-size and package dimensions, it contains one amplifier chain with a single input and output. The PA has a single RF input for both the GSM900 and DCS1800 transmit signals. The amplifier can be configured for 2 separate inputs. Power control is best achieved by variation of VDD1/VDD2 and VDD3 drain voltages with an external transistor. A proposed power control circuit configuration is described. External PMOS drain switch should be used to achieve low leakage. 16 pin HSOF (Plastic) Features • Single positive rail only • Typical output power of 35.5dBm at 900MHz and 33dBm at 1800MHz • Typical efficiency of 37% at 900MHz and 37% at 1800MHz • Small package size with integral heat-sink: 16-pin HSOF (5.6 × 4.4 × 0.9mm) • 3-stage amplifier chain • Simple pin diode circuitry is used to switch between 1800 and 900MHz matching circuits • Off mode insertion loss typically 27dB at 900MHz (Pin = +6dBm at VDD = 0V) • Typical transmit noise @20MHz offset –79dBm/100kHz Applications Dual-band handsets transmitting on the GSM900 or DCS1800 frequencies Structure GaAs J-FET MMIC Absolute Maximum Ratings (Ta = 25°C) • Drain voltage VDD1, VDD2, VDD3 8 V • Gate voltage VGG1, VGG2, VGG3 –5 to +1 V • Input power Pin, max. 12 dBm • Channel temperature Tch, max. 150 °C • Operating temperature Ta –30 to +90 °C • Storage temperature Tstg –40 to +150 °C Note on Handling GaAs MMICs are ESD sensitive devices. Special handling precautions are required. The IC will be damaged in the range from 60 to 100V@200pF, 0Ω. The actual ESD test data will be submitted later. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E00223-PS CXG1047FN Block Diagram Dual Band GSM900/18800 PA Configuration Antenna VDD1 VDD2 VDD3 Switched output matching network RFin RF Out VGG1 VGG2 VGG3 Duplexer LPF (> 2500MHz) Rx900/1800/(1900) CXG1091/1092 Pin Configuration Bottom GND Vg1 9 8 GND 7 GND 6 Vd3/RFout 5 Vd3/RFout 4 Vd3/RFout 3 Vd3/RFout 2 NC 1 Vg3 RFin 10 NC 11 Vd1 12 NC 13 Vg2 14 Vd2 15 M900 16 –2– CXG1047FN Power Amplifier Performance Measurement Conditions: Ta = 25°C, Pin = +6dBm at 900MHz and Pin = +9dBm at 1750MHz, pulsed DC conditions: 12.5% duty cycle 577µs burst duration. All items are specified with the recommended schematic shown on page 6. Item Frequency Frequency range (1) Frequency range (2) Output Power (1) Output power – 900MHz (2) Output power – 1750MHz Power Control Power control range GSM900 Power control range DCS1800 Off insertion loss – 900MHz Off insertion loss – 1750MHz Efficiency Efficiency at 900MHz Efficiency at 1750MHz VSWR Input VSWR at GSM900/DCS1800 Harmonics Tx = 900MHz 2nd harmonics 3rd harmonics 4th harmonics Symbol Condition Min. Typ. Max. Unit GSM900 DCS1800 880 1710 915 1785 MHz MHz POUT POUT POUT VDD = 3.5V VDD = 3.5V VDD = 4V, Pin = +7dBm 34.5 35.5 31.5 31.5 33 33 dBm dBm dBm PCTL PCTL Ins loss Ins loss ∗1 ∗1 VDD = 0V Pin = +7dBm VDD = 0V Pin = +7dBm 38 35 25 35 dB dB dB dB PAE PAE VDD = 3.5V Pin = +6dBm VDD = 3.5V Pin = +9dBm 32 32 37 37 % % 2:1 3:1 After matching cct Po = 35dBm@3.5V After matching cct Po = 35dBm@3.5V After matching cct Po = 35dBm@3.5V –30 –35 –40 –25 –28 –33 dBc dBc dBc –3– CXG1047FN Item Harmonics Tx = 1750MHz 2nd harmonics 3rd harmonics 4th harmonics Stability Measured with 10:1 load impedance all angles Load VSWR mismatch at 900MHz and 1800MHz Transmit Noise GSM900 935MHz to 960MHz DCS1800 1805MHz to 1880MHz Symbol Condition Min. Typ. Max. Unit Measured after matching cct Po = 32dBm@3.5V After matching cct Po = 32dBm@3.5V After matching cct Po = 32dBm@3.5V –25 –30 –40 –20 –25 –35 dBc dBc dBc Over voltage range 3 to 5V and 0dBm to +10dBm input power ∗2 No oscillation present above –60dBm 10:1 Pin = +7dBm VSWR VDD = 3 to 5V POUT = 35dBm POUT = 32dBm –79 –79 dBm/ 100kHz dBm/ 100kHz ∗1 Power control is achived by varying VDD1/VDD2 and VDD3. ∗2 When the output matching network is subjected to a 10:1 VSWR at all phases the amplifier shall suffer no permanent damage. –4– CXG1047FN Dual Band Power Amplifier Schematic Pulsed DC supply R1 C1 L1 9 8 7 6 5 4 C12 14 3 L9 5mm Slot in O/P track C15 C16 RF input 10 R5 11 12 C3 C19 L2 C4 13 C14 RF output C13 D1 L8 L3 15 L4 C5 C6 C7 R2 L5 16 C20 CXG1047FN 1 2 Band select R4 C17 C18 C8 C9 C10 L7 C21 R3 C11 Dual Band Power Amplifier Component Values R1 R2 R3 R4 R5 12Ω 12Ω 160Ω 36Ω 8.2Ω C1 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 C18 C19 C20 C21 47pF 47pF 8.2pF 47pF 1nF 47pF 1.5pF 3.3pF 5.6pF 47pF 2.7/2.7/1.6pF 8.2/1.2pF 47pF 22pF 1nF 47pF 1nF 1nF 2.7pF 8pF L1 L2 L3 L4 L5 L7 L8 L9 D1 68nH 8.2nH 22nH 3.3nH 2.7nH 68nH 68nH 8-turn coilcraft spring type MA4P275-1146 MA/COM –5– CXG1047FN Recommended ALC Schematic Vbat Siliconix IRF9424 RF Out PA Vcc RF In Vcc Voffset From PA Ramp DAC Measurement Circuit – Pulsed DC Supply DC supply TTL inverter G Anritsu GSM measurement set Gate O/P S D P-Channel FET Si9424DY 3.6V PA-Drain Connections VDD1/VDD2/VDD3 577µs pulse 12.5% duty cycle –6– CXG1047FN Example of Representative Characteristics Output power (@VDD = 3V, Pin = 6dBm) 38 37 36 POUT [dBm] POUT [dBm] 35 34 33 32 31 30 840 38 37 36 35 34 33 32 31 30 840 Output power (@VDD = 3.5V, Pin = 6dBm) 860 880 900 920 940 860 880 900 920 940 Frequency [MHz] Frequency [MHz] Output power (@VDD = 4V, Pin = 6dBm) 38 37 36 POUT [dBm] POUT [dBm] 35 34 33 32 31 30 840 40 POUT and PAE vs. Pin (@VDD = 3.5V, 900MHz) 50 POUT [dBm] 35 30 PAE [%] 25 20 15 10 10 5 0 5 0 –6 –4 –2 0 2 4 6 8 10 12 Pin [dBm] 35 PAE [%] 30 25 20 15 45 40 860 880 900 920 940 Frequency [MHz] –7– CXG1047FN Output power (@VDD = 3V, Pin = 8dBm) 34 36 Output power (@VDD = 3.5V, Pin = 8dBm) 35 33 34 POUT [dBm] POUT [dBm] 1720 1740 1760 1780 1800 32 33 32 31 31 30 1700 30 1700 1720 1740 1760 1780 1800 Frequency [MHz] Frequency [MHz] Output power (@VDD = 4V, Pin = 8dBm) 36 40 35 30 34 POUT [dBm] POUT [dBm] 25 20 15 10 31 5 30 1700 0 1720 1740 1760 1780 1800 –6 –4 POUT and PAE vs. Pin (@VDD = 3.5V, 1750MHz) 50 POUT [dBm] 45 40 PAE [%] 35 PAE [%] 30 25 20 15 10 5 0 –2 0 2 4 6 8 10 12 Pin [dBm] 35 33 32 Frequency [MHz] –8– CXG1047FN Package Outline Unit: mm HSOF 16PIN(PLASTIC) 0.9 ± 0.1 ∗5.6 ± 0.1 A 16 9 0.05 S (5.5) (3.1) 3.8 ± 0.1 4.4 ± 0.1 1 8 0.65 0.05 M S A (1.5) (0.7) (0.5) S (0.2) (4.4) (0.2) Solder Plating + 0.1 0.32 – 0.03 B + 0.1 0.26 – 0.03 DETAILB NOTE: Dimension “∗” does not include mold protrusion. PACKAGE STRUCTURE PACKAGE MATERIAL EPOXY RESIN SOLDER PLATING COPPER ALLOY 0.06g LEAD TREATMENT LEAD MATERIAL PACKAGE MASS SONY CODE EIAJ CODE JEDEC CODE HSOF-16P-02 –9– (0.2) + 0.05 0.2 0 (1.75) 0.45 ± 0.15 Sony Corporation