CXK5B41020TM-12

CXK5B41020TM -12 262144-word × 4-bit High Speed Bi-CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5B41020TM is a high speed 1M bit Bi-CMOS static RAM organized as 262144 words by 4 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications. Features • Single 3.3V power supply: 3.3V±0.3V • Fast access time 12ns (Max.) • Low standby current: 10mA (Max.) • Low power operation 792mW (Max.) • Package line-up Dual Vcc/Vss CXK5B41020TM 400mil 32pin TSOP package 32 pin TSOP (PIastic) Function 262144 word × 4-bit static RAM Structure Silicon gate Bi-CMOS IC Block Diagram A16 A17 A10 A9 A14 A15 A12 A11 Buffer Row Decoder Memory Matrix 256 × 4096 Pin Configuration (Top View) NC Vcc A3 A2 A1 A0 GND CE I/O1 Vcc 1 2 3 4 5 6 7 8 32 A4 31 A5 30 A6 29 A7 28 A8 27 OE 26 I/O4 25 GND 24 Vcc 23 I/O3 22 A9 21 A10 20 A11 19 A12 18 A13 17 NC Pin Description Symbol A0 to A17 I/O1 to I/O4 CE WE OE VCC GND NC Description Address input Data input/output Chip enable input Write enable input Output enable input +3.3V power supply Ground No connection GND 9 A6 A13 A5 A4 A3 A0 A2 A1 A7 A8 I/O Gate Column Decoder I/O2 10 WE 11 A17 12 A16 13 A15 14 A14 15 NC 16 Buffer WE OE CE I/O Buffer I/O1 I/O4 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E93726-ST CXK5B41020TM Absolute Maximum Ratings Item Supply voltage Input voltage Input and output voltage Allowable power dissipaiton Operating temperature Storage temperature Symbol VCC VIN VI/O PD Topr Tstg (Ta = 25°C, GND=0V) Rating –0.5∗1 to +4.6 –0.5∗1 to VCC + 0.5 –0.5∗1 to VCC + 0.5 1.5∗2 0 to +70 –55 to +150 235 • 10 Unit V V V W °C °C °C • sec Soldering temperature • time Tsolder ∗1 Vcc, VIN, VI/O = –2.0V Min. for pulse width less than 5ns. ∗2 Air flow ≥ 1m/s. Truth Table CE H L L L OE × L × H WE × H L H Mode Not selected Read Write Output disable I/O1 to I/O4 High Z Data out Data in High Z Current ISB1, ISB2 ICC ICC ICC ×: "H" or "L" Recommended Operating Conditions Item Supply voltage Input high voltage Input low voltage Symbol VCC VIH VIL Min. 3.0 2.0 –0.3∗ (Ta = 0 to +70°C, GND = 0V) Typ. 3.3 — — Max. 3.6 VCC + 0.3 0.8 Unit V V V ∗ VIL=–2.0V Min. for pulse width less than 5ns. –2– CXK5B41020TM Electrical Characteristics DC Characteristics Item Input leakage current Symbol ILI (Vcc = 3.3V ± 0.3V, GND = 0V, Ta = 0 to +70°C) Conditions VIN = GND to VCC CE = VIH or OE = VIH or WE = VIL VI/O = GND to VCC Cycle: Min. Duty = 100% IOUT = 0mA CE = VIL VIN = VIH or VIL CE ≥ VCC – 0.2V VIN ≥ VCC – 0.2V or VIN ≤ 0.2V Cycle: Min. Duty = 100% CE = VIH VIN = VIH or VIL IOH = –2.0mA IOL = 2.0mA Min. –10 Typ.∗ — Max +10 Unit µA Output leakage current ILO –10 — +10 µA Average operating current ICC — — 220 mA ISB1 Standby current ISB2 — — 10 mA — 2.4 — — — — 100 — 0.4 mA V V Output high voltage Output low voltage ∗ Vcc = 3.3V, Ta = 25°C I/O Capacitance Item Input capacitance I/O capacitance VOH VOL (Ta = 25°C, f = 1MHz) Symbol CIN CI/O Conditions VIN = 0V VI/O = 0V Min. — — Typ. — — Max 5 7 Unit pF pF Note) This parameter is sampled and is not 100% tested. AC Characteristics • AC test condition (Vcc = 3.3V ± 0.3V, Ta = 0 to +75°C) Item Input pulse high level Input pulse low level Input rise time Input fall time Input and output reference level Output load conditions Condition VIH = 3.0V VIL = 0.0V I/O Output load (1) Zo=50Ω RL=50Ω VL=1.4V I/O 5pF∗2 Output Load (2)∗1 3.3V 1179Ω tr = 2ns tf = 2ns 1.4V Fig. 1 868Ω ∗1. tLZ, tOLZ, tHZ, tOHZ, tOW, tWHZ ∗2. Including scope and jig capacitances Fig. 1 –3– CXK5B41020TM • Read cycle Item Read cycle time Address access time Chip enable access time Output enable to output valid Output data hold time Chip enable to output in low Z (CE) Output enable to output in low Z (OE) Chip disable to output in high Z (CE) Output disable to output in high Z (OE) Symbol -12 Min. 12 — — — 3 3 0 0 0 Max. — 12 12 6 — — — 6 6 ns ns ns ns ns ns ns ns ns Unit tRC tAA tCO tOE tOH tLZ tOLZ∗ tHZ∗ tOHZ∗ ∗ Transition is measured ±200mV from steady voltage with specified loading in Fig. 1 1-(2). This parameter is sampled and is not 100% tested. • Write cycle Item Write cycle time Address valid to end of write Chip enable to end of write Data valid to end of write Data hold from end of write Write pulse width Address set up time Write recovery time Output active from lend of write Write to output in high Z Symbol -12 Min. 12 10 10 8 0 10 0 0 4 0 Max. — — — — — — — — — 6 ns ns ns ns ns ns ns ns ns ns Unit tWC tAW tCW tDW tDH tWP tAS tWR tOW∗ tWHZ∗ ∗ Transition is measured ±200mV from steady voltage with specified loading in Fig. 1 1-(2). This parameter is sampled and is not 100% tested. –4– CXK5B41020TM Timing Waveform • Read cycle (1) : OE=VIL, WE=VIH tRC Address tAA tOH Data out Previous data valid Data valid • Read cycle (2) : WE=VIH tRC Address tAA CE tLZ tCO tHZ OE tOE tOLZ Data out High impedance Data valid tOHZ –5– CXK5B41020TM • Write cycle (1) : WE control tWC Address tAW CE tCW tWR tAS WE tWP tDW Data in tWHZ Data valid tDH tOW Data out High impedance • Write cycle (2) : CE control tWC Address tAW tAS tCW CE tWR tWP WE tDW Data in Data valid tDH tLZ Data out tWHZ High impedance ∗ Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition. –6– CXK5B41020TM Example of Representative Characteristics Supply current vs. Supply voltage 1.4 1.4 Supply current vs. Ambient temperature ICC — Supply current [Normalized] 1.2 ICC — Supply current [Normalized] 1.2 1.0 1.0 0.8 Ta = 25°C 0.8 VCC = 3.3V 0.6 3.0 0.6 3.15 3.3 3.45 VCC — Supply voltage [V] 3.6 0 20 40 60 Ta — Ambient temperature [°C] 80 Supply current vs. Frequency 12ns 1.0 1.8 Access time vs. Load capacitance tAA, tCO, tOE — Access time [Normalized] tOE ICC — Supply current [Normalized] 0.75 1.6 0.5 1.4 tCO, tAA 0.25 1.2 Ta = 25°C VCC = 3.3V 0 0 25 50 75 Frequency (1/tRC, 1/tWC) [MHz] 100 1.0 0 40 80 120 CL — Load capacitance [pF] 160 Access time vs. Supply voltage 1.4 1.4 Access time vs. Load capacitance tAA, tCO, tOE — Access time [Normalized] tAA, tCO, tOE — Access time [Normalized] 1.2 tOE 1.2 tCO, tOE 1.0 tCO tAA tOE tAA tAA, tCO 1.0 tAA tCO tOE 0.8 Ta = 25°C 0.8 VCC = 3.3V 0.6 3.0 0.6 3.15 3.3 3.45 VCC — Supply voltage [V] 3.6 0 20 40 60 Ta — Ambient temperature [°C] 80 –7– CXK5B41020TM Standby current vs. Supply voltage 1.4 1.4 ISB2 Standby current vs. Ambient temperature ISB1, ISB2 — Standby current [Normalized] 1.2 ISB1 — Standby current [Normalized] ISB1 1.2 1.0 1.0 0.8 Ta = 25°C 0.8 VCC = 3.3V 0.6 3.0 0.6 3.15 3.3 3.45 VCC — Supply voltage [V] 3.6 0 20 40 60 Ta — Ambient temperature [°C] 80 Input voltage level vs. Supply voltage 1.2 1.4 Standby current vs. Ambient temperature VIL, VIH — Input voltage [Normalized] 1.1 ISB2 — Standby current [Normalized] VIH VIL 1.2 1.0 1.0 0.9 Ta = 25°C 0.8 VCC = 3.3V 0.8 3.0 0.6 3.15 3.3 3.45 VCC — Supply voltage [V] 3.6 0 20 40 60 Ta — Ambient temperature [°C] 80 Output high current vs. Output high voltage 4.0 Output low current vs. Output low voltage 1.8 IOH — Output high current [Normalized] 3.0 IOL — Output low current [Normalized] 1.4 2.0 1.0 1.0 VCC = 3.3V 0.6 VCC = 3.3V 0.0 0.0 0.2 1.0 2.0 3.0 VOH — Output high voltage [V] 4.0 0 0.2 0.4 0.6 VOL — Output low voltage [V] 0.8 –8– CXK5B41020TM Package Outline Unit: mm 32PIN TSOP (II) (PLASTIC) 400mil 1.27 MAX ∗20.95 ± 0.1 32 17 0.1 ∗10.16 ± 0.1 11.76 ± 0.2 A 1 1.27 0.4 ± 0.1 16 0.21 M + 0.05 0.127 – 0.02 0.1 ± 0.1 0° to 10° DETAIL A NOTE: Dimension “∗” does not include mold protrusion. PACKAGE STRUCTURE PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE TSOP (II) -32P-L01 TSOP (II) 032-P-0400-A LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT EPOXY / PHENOL RESIN SOLDER PLATING 42 ALLOY –9– 0.5 ± 0.1