CXL5514M/P
CMOS-CCD 1H Delay Line for PAL
Description The CXL5514M/P are CMOS-CCD delay line ICs designed for processing video signals. This ICs provide a 1H delay time for PAL signals including the external lowpass filter. Features • Single 5V power supply • Low power consumption • Built-in peripheral circuit • Built-in tripling PLL circuit • Sync tip clamp mode Absolute Maximum Ratings (Ta = 25°C) • Supply voltage VDD +6 • Operating temperature Topr –10 to +60 • Storage temperature Tstg –55 to +150 • Allowable power dissipation PD CXL5514M 350 CXL5514P 480 Recommended Operating Range (Ta = 25°C) VDD 5V ± 5% Recommended Clock Conditions (Ta = 25°C) • Input clock amplitude VCLK 0.2 to 1.0Vp-p (0.4Vp-p Typ.) • Clock frequency fCLK 4.433619MHz • Input clock waveform Sine wave Block Diagram and Pin Configuration (Top View)
VDD 8 VCO OUT 7 VCO IN 6 CLK 5
CXL5514M 8 pin SOP (Plastic)
CXL5514P 8 pin DIP (Plastic)
Input Signal Amplitude VSIG 500mVp-p (Typ.), 575mVp-p (Max.) (at internal clamp condition) V °C °C Functions • 848-bit CCD register • Clock driver • Auto-bias circuit • Sync tip clamp circuit • Sample and hold circuit • Tripling PLL circuit • Inverted output Structure CMOS-CCD
mW mW
PLL Auto-bias circuit Timing circuit Clamp circuit CCD (848 bit) Output circuit (S/H 1 bit) Clock driver Bias circuit A Bias circuit B 1 IN 2 AB 3 OUT 4 VSS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E94903-ST
CXL5514M/P
Pin Description Pin No. 1 2 3 4 5 6 7 8 IN AB OUT VSS CLK VCO IN VCO OUT VDD Symbol I/O I O O — I I O — Signal input Auto-bias DC output Signal output GND Clock input (fsc) VCO input VCO output (3fsc) 5V power supply >10KΩ 40 to 500Ω Description Impedance >10KΩ
Electrical Characteristics (Ta = 25°C, VDD = 5V, fCLK = 4.433619MHz, VCLK = 400mVp-p, sine wave) See “Electrical Characteristics Test Circuit”. Item Supply current Low frequency gain Frequency response Differential gain Differential phase S/H pulse coupling S/N ratio Symbol IDD GL fR DG DP CP SN Conditions — 200kHz 500mVp-p Sine wave SW conditions 1 a a 2 — b b c c a d Min. 10 –2 –2.7 0 0 — 52 Typ. 15 0 –1.7 3 3 — 56 Max. 20 2 –0.7 5 5 350 — Unit NOTE mA dB dB % degree mVp-p dB 1 2 3 4 4 5 6
200kz ← 4.434MHz → b← c → 150mVp-p Sine wave 5-staircase wave (See Note 4.) 5-staircase wave (See Note 4.) No signal input 50% white video signal (See Note 6.) d d f e
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CXL5514M/P
NOTE 1. This is the IC supply current value during clock and signal input. 2. GL is the output gain of OUT pin when a 500mVp-p, 200kHz sine wave is fed to IN pin. OUT pin output voltage [mVp-p] [dB] 500 [mVp-p]
GL = 20 log
3. Indicates the dissipation at 4.434MHz in relation to 200kHz. From the output voltage at OUT pin when a 150mVp-p, 200kHz sine wave is fed to IN pin, and from the output voltage at OUT pin when a 150mVp-p, 4.434MHz sine wave is fed to the same, calculation is made according to the following formula. OUT pin output voltage (4.434MHz) [mVp-p] [dB] OUT pin output voltage (200kHz) [mVp-p]
fR = 20 log
4. In Fig. below, the differential gain (DG) and the differential phase (DP) are tested with a vector scope when the 5-staircase wave is fed.
150mV
350mV 500mV
150mV 1H 64µs
5. Leakage of internal clock components and related high frequency component to the output signal, during no signal input, is tested.
Test value [mVp-p]
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CXL5514M/P
6. S/N ratio during a 50% white video signal input shown in Fig. below is tested at the video noise meter, in BPF 100kHz to 5MHz, Sub Carrier Trap mode.
175mV 325mV 150mV 1H 64µs
CLOCK
fSC (4.433619MHz) Sine wave
400mVp-p (Typ.)
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Electrical Characteristics Test Circuit
2200p 5V 0.1µ 8 7 VCO OUT VCO IN CXL5514M/P a Oscilloscope IN +15V b 2.2k SW2 1M c Note1) LPF Note 2) d ×3 BPF Noise meter 1 2 3 0.1µ 4 AB OUT VSS CLK VDD 6 5 0.1µ
6.8µ
fsc (4.433619MHz) 400mVp-p Sine wave
200kHz 500mVp-p Sine wave
a
200kHz 150mVp-p Sine wave
b
4.434MHz 150mVp-p Sine wave
c SW1
1µ
Spectrum analyzer
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Note1) [dB] 0 –3 LPF frequency response Note 2) [dB] 0 –3 –50 6M 13.3M Frequency [Hz] –50
×3 Vector scope
5-staircase wave
d
BPF frequency response
50% white video signal
e
f
50 200 6M 13.3M Frequency [Hz]
CXL5514M/P
Application Circuit
2200p
6.8µ
fsc (4.433619MHz) 400mVp-p Sine wave 0.1µ 0.1µ 5 CLK
5V 8 7 VCO OUT CXL5514M/P IN 1 2 3 0.1µ 33k 470 4 5V AB OUT VSS VCO IN VDD 6
1µ 1M 1µ
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56k 1k 1.8k 2SC403 3fsc OUT 2.2k 5V Transistor used NPN: 2SA403
Input
LPF Output 2.2k
When VCO OUT (7Pin) in use
7
Transistor used NPN: 2SC403
CXL5514M/P
Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
CXL5514M/P
Example of Representative Characteristics
Supply current vs. Supply voltage
20 1
Low frequency Gain vs. Supply voltage
Low frequency Gain [dB]
5 Supply voltage [V] 5.25
Supply current [mA]
0
15
–1
10 4.75
–2 4.75
5 Supply voltage [V]
5.25
Frequency response vs. Supply voltage
0 10
Differential gain vs. Supply voltage
8
Frequency response [dB]
–1
Differential gain [%]
5 Supply voltage [V] 5.25
6
4
–2
2
–3 4.75
0 4.75
5 Supply voltage [V]
5.25
Supply current vs. Ambient temperature
20
Low frequency Gain vs. Ambient temperature
1
18
Low frequency Gain [dB]
Supply current [mA]
0
16
14
–1
12
10 –20
0
20
40
60
80
–2 –20
0
20
40
60
80
Ambient temperature [°C]
Ambient temperature [°C]
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CXL5514M/P
Frequency response vs. Ambient temperature
0 10
Differential gain vs. Ambient temperature
8
Frequency response [dB]
–1
Differential gain [%]
0 20 40 60 Ambient temperature [°C] 80
6
4
–2
2
–3 –20
0 –20
0
20 40 60 Ambient temperature [°C]
80
Frequency response
2
0
–2
Gain [dB]
–4
–6
–8
–10 10k
100k Frequency [Hz]
1M
10M
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CXL5514M/P
Package Outline CXL5514M
Unit : mm
8PIN SOP (PLASTIC)
+ 0.4 5.0 – 0.1 + 0.4 1.25 – 0.15 0.10 8 5 A + 0.3 4.4 – 0.1 6.4 ± 0.4 + 0.1 0.15 – 0.05 + 0.15 0.1 – 0.1 0° to 10° DETAIL A
1
4 1.27
+ 0.1 0.4 – 0.05
± 0.12 M
PACKAGE STRUCTURE
MOLDING COMPOUND SONY CODE EIAJ CODE JEDEC CODE SOP-8P-L03 ∗SOP008-P-0225-A LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT EPOXY / PHENOL RESIN SOLDER PLATING 42 ALLOY 0.1g
CXL5514P
8PIN DIP (PLASTIC) 300mil
0.5 ± 0.2
8
5
7.62
+ 0.3 6.4 – 0.1
+ 0.4 9.4 – 0.1
+ 0.1 0.05 0.25 –
0° to 15°
EPOXY RESIN SOLDER PLATING COPPER ALLOY 0.5g
1 2.54
4
0.5 ± 0.1 1.2 ± 0.15
3.0 MIN
0.5 MIN
+ 0.4 3.7 – 0.1
PACKAGE STRUCTURE
PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE DIP-8P-01 ∗DIP008-P-0300-A LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT
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