SGM2016AN

SGM2016AN GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features • Ultra-small package • Low voltage operation • Low noise NF = 1.2dB (typ.) at 900MHz • High gain Ga = 21dB (typ.) at 900MHz • High stability • Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Structure GaAs, N-channel, dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) • Drain to source voltage VDSX 12 • Gate 1 to source voltage VG1S –5 • Gate 2 to source voltage VG2S –5 • Drain current ID 55 • Allowable power dissipation PD 100 • Channel temperature Tch 125 • Storage temperature Tstg –55 to +150 M-281 V V V mA mW °C °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E97939-PS SGM2016AN Electrical Characteristics Item Drain cut-off current Symbol IDSX Conditions VDS = 12V VG1S = –4V VG2S = 0V VG1S = –4.5V VG2S = 0V VDS = 0V VG2S = –4.5V VG1S = 0V VDS = 0V VDS = 5V VG1S = 0V VG2S = 0V VDS = 5V ID = 100µA VG2S = 0V VDS = 5V ID = 100µA VG1S = 0V VDS = 5V ID = 10mA VG2S = 1.5V f = 1kHz VDS = 5V ID = 10mA VG2S = 1.5V f = 1MHz VDS = 5V ID = 10mA VG2S = 1.5V f = 900MHz Min. Typ. (Ta = 25°C) Max. 50 Unit µA Gate 1 to source current IG1SS –8 µA Gate 2 to source current IG2SS –8 µA Drain saturation current IDSS 10 35 mA Gate 1 to source cut-off voltage VG1S (OFF) –2.5 V Gate 2 to source cut-off voltage VG2S (OFF) –2.5 V Forward transfer admittance Input capacitance Feedback capacitance Noise figure NF associated gain gm Ciss Crss NF Ga 20 30 0.9 25 1.2 2.0 40 2.0 ms pF fF dB dB 17 21 Typical Characteristics (Ta = 25°C) ID vs. VDS 40 (VG2S = 1.5V) VG1S = 0V 20 25 (VDS = 5V) VG2S = 1.5V ID vs. VG1S 1.0V 0.5V ID – Drain current [mA] ID – Drain current [mA] 30 0V 15 20 –0.3V 10 –0.5V 10 –0.6V –0.9V 5 –1.0V 0 –2.0 –1.5 –1.0 –0.5 VG1S – Gate 1 to source voltage [V] 0 0 0 1 2 3 4 5 VDS – Drain to source voltage [V] 6 –2– SGM2016AN ID vs. VG2S 25 (VDS = 5V) 50 (VDS = 5V) gm vs. VG1S gm – Forward transfer admittance [ms] 20 ID – Drain current [mA] VG1S = 0V –0.2V 40 VG2S = 1.5V 15 –0.4V 10 30 1.0V 0.5V –0.6V 20 5 –0.8V –1.0V 10 0V –0.5V –1.0V –1.5 –1.0 –0.5 VG1S – Gate 1 to source voltage [V] 0 0 –2.0 –1.5 –1.0 –0.5 VG2S – Gate 2 to source voltage [V] 0 0 –2.0 NF vs. VG1S 5 (VDS = 5V, f = 900MHz) 4 25 30 Ga vs. VG1S (VDS = 5V, f = 900MHz) Ga – Associated gain [dB] NF – Noise figure [dB] VG2S = 1.5V 20 1.0V 3 VG2S = 0.5V 15 0.5V 2 1.0V 1.5V 1 10 5 0 –1.2 0 –1.0 –0.8 –0.6 –0.4 –0.2 0 VG1S – Gate 1 to source voltage [V] 0.2 –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0 VG1S – Gate 1 to source voltage [V] 0.2 NF, Ga vs. ID 3.0 (VDS = 5V, VG2S = 1.5V, f = 900MHz) 2.5 25 2.5 30 3.0 NF, Ga vs. f 35 (VDS = 5V, VG2S = 1.5V, ID = 10mA) 30 NF – Noise figure [dB] 2.0 20 NF – Noise figure [dB] Ga Ga – Associated gain [dB] 2.0 Ga 25 1.5 NF 1.0 15 1.5 NFmin 20 10 1.0 15 0.5 5 0.5 10 0 0 2 4 6 8 10 12 14 16 18 20 22 ID – Drain current [mA] 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 f – Frequency [GHz] 5 –3– Ga – Associated gain [dB] SGM2016AN S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 S11 MAG 0.999 0.994 0.981 0.969 0.952 0.935 0.917 0.896 0.877 0.850 0.822 0.797 0.769 0.744 0.717 0.692 0.668 0.641 0.617 0.589 ANG –3.8 –7.9 –11.8 –16.0 –20.0 –24.1 –27.8 –31.3 –34.7 –38.0 –40.9 –44.0 –46.8 –49.7 –52.4 –54.9 –57.5 –59.6 –61.6 –63.4 MAG 2.521 2.515 2.499 2.480 2.451 2.420 2.391 2.362 2.331 2.294 2.254 2.216 2.182 2.153 2.118 2.076 2.038 2.005 1.963 1.929 S21 ANG 174.2 168.1 162.3 156.3 150.6 144.8 139.4 133.9 128.5 122.9 117.7 112.4 107.3 102.1 96.9 91.8 86.6 81.4 76.4 71.5 MAG 0.002 0.003 0.005 0.006 0.007 0.009 0.009 0.010 0.011 0.012 0.012 0.012 0.013 0.013 0.013 0.013 0.013 0.013 0.013 0.013 S12 ANG 95.0 87.9 83.6 77.7 82.1 76.3 76.8 78.7 74.4 82.6 79.3 72.4 79.0 81.5 80.3 83.7 90.1 98.4 109.0 113.0 MAG 0.969 0.966 0.964 0.961 0.957 0.955 0.955 0.954 0.954 0.953 0.952 0.949 0.947 0.946 0.945 0.945 0.945 0.945 0.945 0.945 (Z0 = 50Ω) S22 ANG –1.3 –3.0 –4.2 –6.1 –7.2 –8.8 –9.9 –11.5 –12.8 –14.4 –15.6 –17.2 –18.2 –20.0 –21.3 –22.9 –24.1 –25.8 –27.3 –28.7 Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 NFmin (dB) 0.73 0.79 0.85 0.92 0.99 1.05 1.11 1.18 1.25 1.32 1.39 1.46 1.53 1.61 1.68 1.76 1.84 1.92 2.00 Gamma Optimum ANG 0.94 0.90 0.87 0.84 0.81 0.78 0.75 0.72 0.70 0.67 0.65 0.63 0.60 0.58 0.56 0.54 0.52 0.50 0.48 MAG 7.5 10.8 13.9 16.8 19.5 22.0 24.5 26.8 29.1 31.4 33.8 36.1 38.6 41.2 43.9 46.8 50.0 53.4 57.0 Rn (Ω) 40.0 39.5 39.0 38.5 37.9 37.4 36.8 36.1 35.5 34.8 34.1 33.4 32.6 31.9 31.0 30.2 29.3 28.5 27.5 –4– SGM2016AN Package Outline SGM2016AN Unit: mm M-281 2.0 ± 0.2 1.3 3 2 1.25 ± 0.1 0.425 (0.65) (0.65) 0.9 ± 0.1 4 1 2.1 ± 0.2 0 ± 0.1 + 0.1 0.3 – 0.05 (0.65) (0.6) + 0.1 0.4 – 0.05 + 0.1 0.1 – 0.01 1.25 1 : Source 2 : Gate 1 3 : Gate 2 4 : Drain PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE M-281 LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT EPOXY RESIN SOLDER PLATING COPPER 0.1g –5–