SLD1137VS

SLD1137VS 650nm Index-Guided Red Laser Diode Description The SLD1137VS is an index-guided red laser diode for BCS. Operating current is 25mA lower than SLD1133VS. Features • Small astigmatism (7µm typ.) • Low operating current (35mA typ.) • Small package (φ5.6mm) • Single longitudinal mode Applications Bar code scanner Structure • AlGaInP MQW laser diode • PIN photodiode to monitor laser beam output Recommend Optical Power Output 5mW M-274 Absolute Maximum Ratings (Tc = 25°C) • Optical power output Po 7 mW • Reverse voltage VR LD 2 V PD 15 V • Operating temperature Topr –10 to +60 °C • Storage temperature Tstg –40 to +85 °C Connection Diagram Pin Configuration Common 3 2 1 PD 2 1 LD 3 1. LD cathode 2. PD anode 3. Common Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E99202-PS SLD1137VS Electrical and Optical Characteristics (Tc = 25°C) Item Threshold current Operating current Operating voltage Wavelength Radiation angle Positional accuracy Perpendicular Parallel Position Angle Ith Iop Vop λp θ⊥ θ// ∆X, ∆Y, ∆Z ∆φ// ∆φ⊥ ηD As Imon Po = 5mW Po = 5mW Po = 5mW, VR = 5V 0.05 0.3 0.5 7 0.1 Po = 5mW Po = 5mW Po = 5mW Po = 5mW 24 Po = 5mW 6 Symbol Conditions Min. Typ. 30 35 2.2 650 30 8 Tc: Case temperature Max. 40 45 2.7 655 40 12 ±80 ±3 ±3 0.8 15 0.5 Unit mA mA V nm degree degree µm degree degree mW/mA µm mA Differential efficiency Astigmatism Monitor current –2– SLD1137VS Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics TC = 0°C 25°C 40°C 60°C TC = 0°C 25°C 40°C 60°C 7 6 5 4 3 2 1 0 Po = 5mW Tc = 25°C θ⊥ Imon Far field pattern (FFP) Po – Optical power output [mW] Relative radiant intensity θ // 0 0 20 40 60 –60 –40 –20 0 20 40 60 IF – Forward current [mA] 0.2 Imon – Monitor current [mA] Angle [degree] Threshold current vs. Temperature characteristics 200 Monitor current vs. Temperature characteristics 0.2 PO = 5mW Ith – Threshold current [mA] 100 Imon – Monitor current [mA] –10 0 10 20 40 50 70 0.1 10 –20 30 60 0 –20 –10 0 10 20 30 40 50 60 70 Tc – Case temperature [°C] Tc – Case temperature [°C] –3– SLD1137VS Temperature dependence of spectrum Po = 5mW Tc = 60°C Tc = 40°C Relative radiant intensity Tc = 25°C Tc = 0°C 645 650 655 λ – Wavelength [nm] 660 665 –4– SLD1137VS Power output dependence of spectrum Tc = 25°C Po = 7mW Relative radiant intensity Po = 5mW Po = 1mW 645 650 655 λ – Wavelength [nm] 660 665 –5– SLD1137VS Package Outline Unit: mm M-274 Reference Slot 0.5 3 1.0 90° 2 1 0 φ5.6 – 0.025 Window Glass φ4.4 MAX φ3.7 MAX φ1.0 MIN 0.5 MIN 0.4 231 3 – φ0.45 PCD φ2.0 ∗Optical Distance = 1.35 ± 0.08 SONY CODE EIAJ CODE JEDEC CODE M-274 6.5 LD Chip & Photo Diode 1.2 ± 0.1 Reference Plane 2.6 MAX 0.25 ∗1.26 PACKAGE WEIGHT 0.3g –6–