SLD302V

SLD302V 200mW High Power Laser Diode Description The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Applications • Solid state laser excitation • Medical use Structure GaAlAs double-hetero-type laser diode Absolute Maximum Ratings (Tc = 25°C) • Optical power output Po 200 • Reverse voltage VR LD 2 PD 15 • Operating temperature Topr –10 to +50 • Storage temperature Tstg –40 to +85 Pin Configuration Po = 180mW mW V V °C °C 2 1 3 1. LD cathode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E88060B81-PS SLD302V Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength∗1 Monitor current Radiation angle (F. W. H. M.∗) Positional accuracy Differential efficiency Perpendicular Parallel Position Angle Symbol Ith Iop Vop λp Imon θ⊥ θ// ∆X, ∆Y ∆φ⊥ ηD PO = 180mW PO = 180mW PO = 180mW PO = 180mW VR = 10V PO = 180mW 770 Conditions Min. (Tc: Case temperature, Tc = 25°C) Typ. 150 350 1.9 Max. 200 500 3.0 840 0.3 28 12 PO = 180mW PO = 180mW 0.65 0.9 40 17 ±50 ±3 Unit mA mA V nm mA degree degree µm degree mW/mA ∗ F. W. H. M. : Full Width at Half Maximum ∗1 Wavelength Selection Classification Type SLD302V-1 SLD302V-2 SLD302V-3 Type SLD302V-21 SLD302V-24 SLD302V-25 Wavelength (nm) 785 ± 15 810 ± 10 830 ± 10 Wavelength (nm) 798 ± 3 807 ± 3 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 1W. However the optical power density of the laser beam at the diode chip reaches 1mW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Laser diode Lens Optical material Safety goggles for protection from laser beam IR fluorescent plate AP C ATC Optical boad Optical power output control device temperature control device –2– SLD302V Example of Representative Characteristics Optical power output vs. Forward current characteristics 200 TC = –10°C Po – Optical power output [mW] 200 TC = –10°C TC = 50°C Po – Optical power output [mW] TC = 0°C TC = 25°C Optical power output vs. Monitor current characteristics TC = 0°C TC = 25°C 100 TC = 50°C 100 0 0 0 0.1 Imon – Monitor current [mA] 0.2 0 250 IF – Forward current [mA] 500 Threshold current vs. Temperature characteristics 1000 Power dependence of far field pattern (parallel to junction) TC = 25°C Radiation intensity (optional scale) Ith – Threshold current [mA] 500 PO = 180mW PO = 90mW PO = 30mW 100 –10 0 10 20 30 Tc – Case temperature [°C] 40 50 –30 –20 –10 0 10 Angle [degree] 20 30 Power depecdence of near field pattern TC = 25°C Radiation intensity (optional scale) λp – Oscillation wavelength [nm] Oscillation wavelength vs. Temperature characteristics 830 PO = 180mW 820 810 PO = 180mW PO = 150mW PO = 100mW PO = 75mW PO = 50mW PO = 25mW 800 790 50µm 780 –10 0 10 20 30 Tc – Case temperature [°C] 40 50 –3– SLD302V Differential efficiency vs. Temperature characteristics 1.5 80 Power dependence of polarization ratio Tc = 25°C ηD – Differential efficiency [mW/mA] 60 Polarization ratio –10 0 10 20 30 40 50 1.0 40 0.5 20 0 0 0 50 100 150 200 250 Tc – Case temperature [°C] Po – Optical power output [mW] –4– SLD302V Power dependence of wavelength Tc = 25°C Po = 40mW Relative radiant intensity Relative radiant intensity Tc = 25°C Po = 80mW 800 805 Wavelength [nm] 810 800 805 Wavelength [nm] 810 Tc = 25°C Po = 120mW Relative radiant intensity Relative radiant intensity Tc = 25°C Po = 160mW 800 805 Wavelength [nm] 810 800 805 Wavelength [nm] 810 Tc = 25°C Po = 200mW Relative radiant intensity 800 805 Wavelength [nm] 810 –5– SLD302V Temperature dependence of wavelength (Po = 180mW) Tc = –6°C Tc = 12°C Relative radiant intensity 805 815 Wavelength [nm] 825 Relative radiant intensity 805 815 Wavelength [nm] 825 Tc = 23°C Tc = 35°C Relative radiant intensity 805 815 Wavelength [nm] 825 Relative radiant intensity 805 815 Wavelength [nm] 825 Tc = 45°C Relative radiant intensity 805 815 Wavelength [nm] 825 –6– SLD302V Package Outline Unit: mm M-248 (LO-11) Reference Slot 1.0 3 2 1 Photo Diode 0 φ9.0 – 0.015 φ7.7 MAX φ6.9 MAX φ3.5 Window Glass 0.6 MAX 3 – φ0.45 PCD φ2.54 PACKAGE WEIGHT 0.4 Reference Plane LD Chip ∗Optical Distance = 2.55 ± 0.05 SONY CODE EIAJ CODE JEDEC CODE M-248 –7– 7.0 MAX 1.2g 1.5 3.4 MAX ∗2.45