SLD322V-3

SLD322V High Power Density 0.5W Laser Diode Description The SLD322V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure∗2. ∗1 MOCVD: Metal Organic Chemical Vapor Deposition ∗2 QW-SCH: Quantum Well Separate Confinement Heterostructure Features • High power Recommended optical power output: Po = 0.5W • Low operating current: Iop = 0.75A (Po = 0.5W) Applications • Solid state laser excitation • Medical use • Material processes • Measurement Structure GaAlAs quantum well structure laser diode Absolute Maximum Ratings (Tc = 25°C) • Optical power output Po 0.55 • Reverse voltage VR LD 2 PD 15 • Operating temperature (Tc) Topr –10 to +30 • Storage temperature Tstg –40 to +85 Pin Configuration W V V °C °C 2 1 3 1. LD cathode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E93205A81-PS SLD322V Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength∗1 Monitor current Radiation angle (F. W. H. M.∗) Positional accuracy Differential efficiency Perpendicular Parallel Position Angle Symbol Ith Iop Vop λp Imon θ⊥ θ// ∆X, ∆Y ∆φ⊥ ηD PO = 0.5W PO = 0.5W PO = 0.5W PO = 0.5W VR = 10V PO = 0.5W 790 0.15 20 4 Conditions Min. (Tc: Case temperature, Tc = 25°C) Typ. 0.18 0.75 2.1 Max. 0.3 1.2 3.0 840 0.8 30 9 3.0 40 17 ±50 ±3 PO = 0.5W 0.5 0.9 Unit A A V nm mA degree degree µm degree W/A PO = 0.5W ∗ F. W. H. M. : Full Width at Half Maximum ∗1 Wavelength Selection Classification Type SLD322V-1 SLD322V-2 SLD322V-3 Type SLD322V-21 SLD322V-24 SLD322V-25 Wavelength (nm) 795 ± 5 810 ± 10 830 ± 10 Wavelength (nm) 798 ± 3 807 ± 3 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Laser diode Lens Optical material Safety goggles for protection from laser beam IR fluorescent plate AP C ATC Optical boad Optical power output control device temperature control device –2– SLD322V Example of Representative Characteristics Optical power output vs. Forward current characteristics 1000 TC = 0°C Po – Optical power output [mW] Po – Optical power output [mW] 800 TC = 0°C 600 TC = –10°C TC = 30°C 400 TC = 25°C 500 TC = –10°C TC = 30°C Optical power output vs. Monitor current characteristics TC = 25°C 250 200 0 200 400 600 800 1000 0 0 0.5 Imon – Monitor current [mA] 1.0 IF – Forward current [mA] Threshold current vs. Temperature characteristics 1000 Power dependence of far field pattern (Parallel to junction) TC = 25°C Ith – Threshold current [mA] 500 Radiation intensity (optional scale) PO = 500mW PO = 400mW PO = 300mW PO = 200mW PO = 100mW 100 –10 0 10 20 30 –90 –60 –30 0 30 60 90 Tc – Case temperature [°C] Angle [degree] Power dependence of far field pattern (Perpendicular to junction) TC = 25°C Radiation intensity (optional scale) Temperature dependence of far field pattern (Parallel to junction) PO = 500mW Radiation intensity (optional scale) –90 –60 –30 0 PO = 500mW PO = 400mW PO = 300mW PO = 200mW PO = 100mW 30 60 90 TC = 25°C TC = 10°C TC = –5°C –90 –60 –30 0 30 60 90 Angle [degree] Angle [degree] –3– SLD322V Temperature dependence of far field pattern (Perpendicular to junction) 820 PO = 500mW Radiation intensity (optional scale) Dependence of wavelength Po = 500mW λp – Wavelength [nm] TC = 25°C TC = 10°C TC = –5°C –60 –30 0 30 60 90 810 800 –90 790 –10 0 10 20 30 Angle [degree] Tc – Case temperature [°C] Differential efficiency vs. Temperature characteristics ηD – Differential efficiency [mW/mA] 1.0 0.5 0 –10 0 10 20 30 Tc – Case temperature [°C] –4– SLD322V Power dependence of spectrum 1.0 1.0 Tc = 25°C Po = 0.2W Tc = 25°C Po = 0.3W 0.8 Relative radiant intensity Relative radiant intensity 796 798 800 802 804 0.8 0.6 0.6 0.4 0.4 0.2 0.2 796 798 800 802 804 Wavelength [nm] Wavelength [nm] 1.0 Tc = 25°C Po = 0.4W 1.0 Tc = 25°C Po = 0.5W 0.8 Relative radiant intensity Relative radiant intensity 796 798 800 802 804 0.8 0.6 0.6 0.4 0.4 0.2 0.2 796 798 800 802 804 Wavelength [nm] Wavelength [nm] –5– SLD322V Temperature dependence of spectrum (Po = 0.5W) 1.0 Tc = –10°C 1.0 Tc = 0°C 0.8 Relative radiant intensity Relative radiant intensity 0.8 0.6 0.6 0.4 0.4 0.2 0.2 785 790 795 800 805 810 815 785 790 795 800 805 810 815 Wavelength [nm] Wavelength [nm] 1.0 Tc = 25°C 1.0 Tc = 30°C 0.8 Relative radiant intensity Relative radiant intensity 795 800 805 810 815 0.8 0.6 0.6 0.4 0.4 0.2 0.2 785 790 785 790 795 800 805 810 815 Wavelength [nm] Wavelength [nm] –6– SLD322V Package Outline Unit: mm M-248 (LO-11) Reference Slot 1.0 3 2 1 Photo Diode 0 φ9.0 – 0.015 φ7.7 MAX φ6.9 MAX φ3.5 Window Glass 0.6 MAX 3 – φ0.45 PCD φ2.54 PACKAGE WEIGHT 0.4 Reference Plane LD Chip ∗Optical Distance = 2.55 ± 0.05 SONY CODE EIAJ CODE JEDEC CODE M-248 –7– 7.0 MAX 1.2g 1.5 3.4 MAX ∗2.45