0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SLD324ZT-21

SLD324ZT-21

  • 厂商:

    SONY(索尼)

  • 封装:

  • 描述:

    SLD324ZT-21 - High-Power Density 2W Laser Diode - Sony Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
SLD324ZT-21 数据手册
SLD324ZT High-Power Density 2W Laser Diode Description The SLD324ZT is a gain-guided, high-power density laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by controlling the laser chip temperature. Features • High power Recommended optical power output: Po = 2.0W • Low operating current: Iop = 2.5A (Po = 2.0W) • Newly developed flat package with built-in photodiode, TE cooler and thermistor Applications • Solid state laser excitation • Medical use • Material processes • Measurement Structure GaAlAs quantum well structure laser diode Absolute Maximum Ratings (Tth = 25°C) • Optical power output Po • Reverse voltage VR LD PD • Operating temperature (Tth) Topr • Storage temperature Tstg • Operating current of TE cooler IT Pin Configuration (Top View) No. 1 2 3 4 5 6 Function TE Cooler (negative) TE Cooler (negative) Thermistor Thermistor LD (anode) LD (anode) No. 7 8 9 10 11 12 Function LD (cathode) LD (cathode) PD (cathode) PD (anode) TE Cooler (positive) TE Cooler (positive) Equivalent Circuit TE Cooler TH LD PD 2.2 2 15 –10 to +30 –40 to +85 4.0 W V V °C °C A 12 3 4 5 67 8 9 10 11 12 1 12 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E93322B81-PS SLD324ZT Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength∗1 Monitor current Radiation angle (F. W. H. M.∗) Positional accuracy Differential efficiency Thermistor resistance Perpendicular Parallel Position Angle Symbol Ith Iop Vop λp Imon θ⊥ θ// ∆X, ∆Y ∆φ⊥ ηD Rth PO = 2.0W PO = 2.0W PO = 2.0W PO = 2.0W VR = 10V PO = 2.0W Conditions (Tth: Thermistor temperature, Tth = 25°C) Min. Typ. 0.6 2.5 2.2 790 0.15 20 4 0.8 30 9 Max. 1.0 3.5 3.0 840 3.0 40 17 ±100 ±3 PO = 2.0W Tth = 25°C 0.65 1.0 10 Unit A A V nm mA degree degree µm degree W/A kΩ PO = 2.0W ∗ F. W. H. M. : Full Width at Half Maximum ∗1 Wavelength Selection Classification Type SLD324ZT-1 SLD324ZT-2 SLD324ZT-3 Type SLD324ZT-21 SLD324ZT-24 SLD324ZT-25 Wavelength (nm) 795 ± 5 810 ± 10 830 ± 10 Wavelength (nm) 798 ± 3 807 ± 3 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Laser diode Lens Optical material Safety goggles for protection from laser beam IR fluorescent plate AP C ATC Optical boad Optical power output control device temperature control device –2– SLD324ZT Example of Representative Characteristics Optical power output vs. Forward current characteristics 3 Tth = 15°C Tth = 25°C Tth = 0°C Tth = –10°C Tth = 30°C Optical power output vs. Monitor current characteristics 2.5 Tth = 15°C Po – Optical power output [W] 2 Tth = 0°C Tth = –10°C Tth = 25°C Tth = 30°C 2.5 Po – Optical power output [W] 2 1.5 1.5 1 1 0.5 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 0 0 0.5 Imon – Monitor current [mA] 1 IF – Forward current [A] Threshold current vs. Temperature characteristics 1 830 Dependence of wavelength PO = 2.0W 820 Ith – Threshold current [A] λp – Wavelength [nm] 0.1 –10 0 10 20 30 810 800 790 780 –10 0 10 20 30 Tth – Thermistor temperature [°C] Tth – Thermistor temperature [°C] Power dependence of far field pattern (Perpendicular to junction) Tth = 25°C Radiation intensity (optional scale) Radiation intensity (optional scale) Power dependence of far field pattern (Parallel to junction) Tth = 25°C PO = 2.0W PO = 1.5W PO = 1.0W PO = 0.5W PO = 2.0W PO = 1.5W PO = 1.0W PO = 0.5W –60 –30 0 30 60 90 –90 –60 –30 0 30 60 90 –90 Angle [degree] Angle [degree] –3– SLD324ZT Differential efficiency vs. Temperature characteristics 1.5 50 ηD – Differential efficiency [mW/mA] Rth – Thermister resistance [kΩ] Termistor chacteristics 1 10 0.5 5 0 –10 0 10 20 30 1 –10 0 10 20 30 40 50 60 70 Tth – Termistor temperature [°C] Tth – Termistor temperature [°C] TE cooler characteristics TE cooler characteristics 1 40 Tc = 32°C 15 40 Tth = 25°C TE cooler characteristics 2 15 IT = Q – Absorbed heat [W] Q – Absorbed heat [W] 30 VT – Pin voltage [V] ∆T vs V IT = 4A 20 3A 2A 5 10 30 4A VT – Pin voltage [V] 3A ∆T vs V 10 20 2A ∆T 5 ∆T 10 10 3A vs Q vs Q 4A 3A 4A 0 2A 80 100 0 0 0 20 40 60 80 100 2A 0 0 20 40 60 ∆T – Temperature difference [°C] ∆T: Tc – Tth Tth: Thermistor temperature Tc: Case temperature ∆T – Temperature difference [°C] –4– SLD324ZT Power dependence of spectrum Tth = 25°C Po = 0.8W 1.00 Relative radiant intensity Relative radiant intensity 1.00 Tth = 25°C Po = 1.2W 0.00 790 Wavelength [nm] 800 0.00 790 Wavelength [nm] 800 Tth = 25°C Po = 1.6W 1.00 Relative radiant intensity Relative radiant intensity 1.00 Tth = 25°C Po = 2.0W 0.00 790 Wavelength [nm] 800 0.00 790 Wavelength [nm] 800 –5– SLD324ZT Temperature dependence of spectrum (Po = 2W) Tth = –10°C 1.00 Relative radiant intensity Relative radiant intensity 1.00 Tth = 0°C 0.00 780 Wavelength [nm] 810 0.00 780 Wavelength [nm] 810 Tth = 25°C 1.00 Relative radiant intensity Relative radiant intensity 1.00 Tth = 30°C 0.00 780 Wavelength [nm] 810 0.00 780 Wavelength [nm] 810 –6– SLD324ZT Package Outline Unit: mm M-272 + 0.06 4 – φ3.0 0 41.0 ± 0.05 20.0 ± 0.05 18.0 φ5.0 Window Glass 8.0 ± 0.5 12 – φ0.64 2.54 46.0 ± 0.5 0.8 MAX 23.0 36.0 ± 0.5 LD CHIP ∗10.0 ± 0.1 36.0 ± 0.5 9.0 ± 0.2 118 g Reference Plane ∗20.5 ± 0.1 SONY CODE EIAJ CODE JEDEC CODE M-272 ∗Distance between pilot hole and emitting area. PACKAGE WEIGHT –7– 3.0 13.05 ± 0.1 12.35
SLD324ZT-21
物料型号: - 型号:SLD324ZT

器件简介: - SLD324ZT是一款增益引导型、高功率密度的激光二极管,内置TE制冷器。采用新型扁平、方形封装,具有低热阻和直线引脚配置。通过控制激光芯片温度,可以微调波长。

引脚分配: - 引脚1和2:TE制冷器(负极) - 引脚3:热敏电阻 - 引脚4:热敏电阻 - 引脚5和6:激光二极管(阳极) - 引脚7和8:激光二极管(阴极) - 引脚9:光电二极管(阴极) - 引脚10:光电二极管(阳极) - 引脚11和12:TE制冷器(正极)

参数特性: - 绝对最大额定值: - 光功率输出:2.2W - 反向电压:2V(激光二极管),15V(光电二极管) - 工作温度:-10至+30°C - 存储温度:-40至+85°C - TE制冷器工作电流:4.0A

功能详解: - 阈值电流:0.6-1.0A - 工作电流:2.5-3.5A(在2.0W功率输出时) - 工作电压:2.2-3.0V(在2.0W功率输出时) - 波长:790-840nm - 监控电流:0.15-3.0mA(在2.0W功率输出且反向电压为10V时) - 发射角(FWHM):垂直20-40度,水平4-17度 - 位置精度:±100微米 - 角度精度:±3度 - 差分效率:0.65-1.0W/A - 热敏电阻:25°C时为10kΩ

应用信息: - 固态激光器激励 - 医疗用途 - 材料加工 - 测量

封装信息: - 该型号具有新型扁平封装,具体尺寸和外形图在文档中有详细描述。
SLD324ZT-21 价格&库存

很抱歉,暂时无法提供与“SLD324ZT-21”相匹配的价格&库存,您可以联系我们找货

免费人工找货