SLD342YT
2W High Power Laser Diode
Description The SLD342YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. Features • High-optical power output Recommended optical power output: PO = 2.0W • High-optical power density: 2W/100µm (Emitting line width) Applications • Solid state laser excitation • Medical use • Material processing • Measurement Structure AlGaAs quantum well structure laser diode Operating Lifetime MTTF 10,000H (effective value) at Po = 2.0W, Tth = 25°C Absolute Maximum Ratings (Tth = 25°C) • Optical power output PO 2.2 W • Reverse voltage VR LD 2 V PD 15 V • Operating temperature (Tth) Topr –10 to +30 °C • Storage temperature Tstg –40 to +85 °C Warranty This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the product shall be replaced free of charge. Laser diodes naturally have differing lifetimes which follow a Weibull distribution. Special warranties are also available.
1
Preliminary
M-288
Equivalent Circuit
TE Cooler
Case
LD TH PD
3
4
5
6
7
8
9
10
Pin Configuration (Top View) No. 1 2 3 4 5 6 7 8 9 10 Case Laser diode (anode) Thermistor Thermistor Laser diode (cathode) Photo diode (anode) Photo diode (cathode) TE cooler (positive) Function TE cooler (negative) —
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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PE00197-PS
SLD342YT
Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength∗ Radiation angle Perpendicular Parallel Position Positional accuracy Angle Symbol Ith Iop Vop λP θ⊥ θ// ∆X, ∆Y ∆φ⊥ ∆φ// ηD Imon Rth PO = 2.0W PO = 2.0W VR = 10V Tth = 25°C PO = 2.0W PO = 2.0W PO = 2.0W PO = 2.0W PO = 2.0W Conditions
(Tth = Thermistor temperature, Tth = 25°C) Min. Typ. 0.4 2.2 2.0 790 10 5 23 10 Max. 1.0 3.5 3.0 840 35 15 ±100 ±3 ±4 0.5 0.2 1.1 0.8 10 1.5 4.0 Unit A A V nm degree degree µm degree degree W/A mA kΩ
Differential efficiency Monitor current Thermistor resistance ∗ Wavelength Selection Classification Type SLD342YT-1 SLD342YT-2 SLD342YT-3 Type SLD342YT-21 SLD342YT-24 SLD342YT-25 Wavelength (nm) 795 ± 5 810 ± 10 830 ± 10 Wavelength (nm) 798 ± 3 807 ± 3 810 ± 3
Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 10W. However the optical power density of the laser beam at the diode chip reaches 1.5MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely.
Laser diode
Lens Optical material
Safety goggles for protection from laser beam
IR fluorescent plate
Optical board
Optical power output control device Temperature control device
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SLD342YT
Package Outline
Unit: mm
M-288
+ 0.08 4 – φ4.04 – 0.03 38.60 ± 0.15
19.05 ± 0.15
φ5.0
Window Glass
R1 .0
R1 .0
1.0
9 – φ1.0 2.54 44.45 ± 0.50 LD Chip 31.75 ± 0.50
0.9 MAX
3.6
12.8
150g
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4
4
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31.75 ± 0.50 3.0 14.9 ± 0.3 17.8 ± 0.3
Reference Plane 19.30 ± 0.15
SONY CODE EIAJ CODE JEDEC CODE
17.0
26.4
M-288
PACKAGE WEIGHT
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Sony Corporation
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