SLD343YT-21

SLD343YT 4W High Power Laser Diode Description The SLD343YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. Features • High-optical power output Recommended optical power output: PO = 4.0W • High-optical power density: 4W/200µm (Emitting line width) Applications • Solid state laser excitation • Medical use • Material processing • Measurement Structure AlGaAs quantum well structure laser diode Operating Lifetime MTTF 10,000H (effective value) at Po = 4.0W, Tth = 25°C Absolute Maximum Ratings (Tth = 25°C) • Optical power output PO 4.4 W • Reverse voltage VR LD 2 V PD 15 V • Operating temperature (Tth) Topr –10 to +30 °C • Storage temperature Tstg –40 to +85 °C Warranty This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the product shall be replaced free of charge. Laser diodes naturally have differing lifetimes which follow a Weibull distribution. Special warranties are also available. 1 Preliminary M-288 Equivalent Circuit TE Cooler Case LD TH PD 3 4 5 6 7 8 9 10 Pin Configuration (Top View) No. 1 2 3 4 5 6 7 8 9 10 Case Laser diode (anode) Thermistor Thermistor Laser diode (cathode) Photo diode (anode) Photo diode (cathode) TE cooler (positive) Function TE cooler (negative) — Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– PE00198-PS SLD343YT Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength∗ Radiation angle Perpendicular Parallel Position Positional accuracy Angle Symbol Ith Iop Vop λP θ⊥ θ// ∆X, ∆Y ∆φ⊥ ∆φ// ηD Imon Rth PO = 4.0W PO = 4.0W VR = 10V Tth = 25°C PO = 4.0W PO = 4.0W PO = 4.0W PO = 4.0W PO = 4.0W Conditions (Tth = Thermistor temperature, Tth = 25°C) Min. Typ. 1.0 4.6 2.0 790 10 5 23 10 Max. 2.0 6.5 3.0 840 35 15 ±100 ±3 ±4 0.5 0.2 1.1 1.0 10 1.5 4.0 Unit A A V nm degree degree µm degree degree W/A mA kΩ Differential efficiency Monitor current Thermistor resistance ∗ Wavelength Selection Classification Type SLD343YT-1 SLD343YT-2 SLD343YT-3 Type SLD343YT-21 SLD343YT-24 SLD343YT-25 Wavelength (nm) 795 ± 5 810 ± 10 830 ± 10 Wavelength (nm) 798 ± 3 807 ± 3 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 10W. However the optical power density of the laser beam at the diode chip reaches 1.5MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Laser diode Lens Optical material Safety goggles for protection from laser beam IR fluorescent plate Optical board Optical power output control device Temperature control device –2– SLD343YT Package Outline Unit: mm M-288 + 0.08 4 – φ4.04 – 0.03 38.60 ± 0.15 19.05 ± 0.15 φ5.0 Window Glass R1 .0 R1 .0 1.0 9 – φ1.0 2.54 44.45 ± 0.50 LD Chip 31.75 ± 0.50 0.9 MAX 3.6 12.8 150g – 4 4 – 31.75 ± 0.50 3.0 14.9 ± 0.3 17.8 ± 0.3 Reference Plane 19.30 ± 0.15 SONY CODE EIAJ CODE JEDEC CODE 17.0 26.4 M-288 PACKAGE WEIGHT –3– Sony Corporation